Cited by
Cited by
Dielectric breakdown mechanisms in gate oxides
S Lombardo, JH Stathis, BP Linder, KL Pey, F Palumbo, CH Tung
Journal of applied physics 98 (12), 12, 2005
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
Carbon nanotube membranes with ultrahigh specific adsorption capacity for water desalination and purification
HY Yang, ZJ Han, SF Yu, KL Pey, K Ostrikov, R Karnik
Nature communications 4 (1), 1-8, 2013
Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing
KK Ong, KL Pey, PS Lee, ATS Wee, XC Wang, YF Chong
Applied physics letters 89 (17), 172111, 2006
A study of thermo-mechanical stress and its impact on through-silicon vias
N Ranganathan, K Prasad, N Balasubramanian, KL Pey
Journal of micromechanics and microengineering 18 (7), 075018, 2008
Excimer laser-annealed dopant segregated Schottky (ELA-DSS) Si nanowire gate-all-around (GAA) pFET with near zero effective Schottky barrier height (SBH)
YK Chin, KL Pey, N Singh, GQ Lo, LH Tan, G Zhu, X Zhou, XC Wang, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
Effect of copper TSV annealing on via protrusion for TSV wafer fabrication
A Heryanto, WN Putra, A Trigg, S Gao, WS Kwon, FX Che, XF Ang, J Wei, ...
Journal of electronic materials 41 (9), 2533-2542, 2012
New salicidation technology with Ni (Pt) alloy for MOSFETs
PS Lee, KL Pey, D Mangelinck, J Ding, DZ Chi, L Chan
IEEE Electron Device Letters 22 (12), 568-570, 2001
Method of making self-aligned silicide narrow gate electrodes for field effect transistors having low sheet resistance
H Wong, KL Pey, L Chan
US Patent 5,731,239, 1998
Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient
CH Tung, KL Pey, LJ Tang, MK Radhakrishnan, WH Lin, F Palumbo, ...
Applied Physics Letters 83 (11), 2223-2225, 2003
The nature of dielectric breakdown
X Li, CH Tung, KL Pey
Applied Physics Letters 93 (7), 072903, 2008
Annealing of ultrashallow junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths
YF Chong, KL Pey, ATS Wee, A See, L Chan, YF Lu, WD Song, LH Chua
Applied Physics Letters 76 (22), 3197-3199, 2000
Influence of Bosch etch process on electrical isolation of TSV structures
N Ranganathan, DY Lee, L Youhe, GQ Lo, K Prasad, KL Pey
IEEE Transactions on components, packaging and manufacturing technology 1 …, 2011
Silicon nitride--TEOS oxide, salicide blocking layer for deep sub-micron devices
KL Pey, SY Siah, YM Lee
US Patent 6,025,267, 2000
Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization
CL Gan, CV Thompson, KL Pey, WK Choi, HL Tay, B Yu, ...
Applied physics letters 79 (27), 4592-4594, 2001
Vertically arrayed Si nanowire/nanorod-based core-shell pn junction solar cells
X Wang, KL Pey, CH Yip, EA Fitzgerald, DA Antoniadis
Journal of Applied Physics 108 (12), 124303, 2010
Two-dimensional analytical Mott-Gurney law for a trap-filled solid
W Chandra, LK Ang, KL Pey, CM Ng
Applied physics letters 90 (15), 153505, 2007
Dual metal gate process: metals and their silicides
W Lin, MS Zhou, KL Pey, S Chooi
US Patent 6,475,908, 2002
Micro‐Raman Spectroscopy Investigation of Nickel Silicides and Nickel (Platinum) Silicides
PS Lee, D Mangelinck, KL Pey, ZX Shen, J Ding, T Osipowicz, A See
Electrochemical and Solid-State Letters 3 (3), 153, 2000
Intrinsic nanofilamentation in resistive switching
X Wu, D Cha, M Bosman, N Raghavan, DB Migas, VE Borisenko, ...
Journal of Applied Physics 113 (11), 114503, 2013
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