| On the preparation of metalloporphyrins AD Adler, FR Longo, F Kampas, J Kim Journal of Inorganic and Nuclear Chemistry 32 (7), 2443-2445, 1970 | 2222 | 1970 |
| Solving circle packing problems by global optimization: numerical results and industrial applications I Castillo, FJ Kampas, JD Pintér European Journal of Operational Research 191 (3), 786-802, 2008 | 280 | 2008 |
| Photoelectrochemical properties of metalloporphyrins FJ Kampas, K Yamashita, J Fajer Nature 284 (5751), 40-42, 1980 | 153 | 1980 |
| Origin of emitting species in the plasma deposition of a‐Si: H alloys FJ Kampas, RW Griffith Journal of Applied Physics 52 (3), 1285-1288, 1981 | 137 | 1981 |
| Hydrogen elimination during the glow‐discharge deposition of a‐Si: H alloys FJ Kampas, RW Griffith Applied Physics Letters 39 (5), 407-409, 1981 | 107 | 1981 |
| Synchrotron-radiation studies of the transition of hydrogenated amorphous carbon to graphitic carbon D Wesner, S Krummacher, R Carr, TK Sham, M Strongin, W Eberhardt, ... Physical Review B 28 (4), 2152, 1983 | 103 | 1983 |
| Porphyrin films. 3. Photovoltaic properties of octaethylporphine and tetraphenylporphine FJ Kampas, M Gouterman The Journal of Physical Chemistry 81 (8), 690-695, 1977 | 102 | 1977 |
| An optical emission study of the glow‐discharge deposition of hydrogenated amorphous silicon from argon‐silane mixtures FJ Kampas Journal of Applied Physics 54 (5), 2276-2280, 1983 | 80 | 1983 |
| A study of hydrogenated amorphous silicon deposited by rf glow discharge in silane‐hydrogen mixtures PE Vanier, FJ Kampas, RR Corderman, G Rajeswaran Journal of applied physics 56 (6), 1812-1820, 1984 | 79 | 1984 |
| Optical emission spectroscopy: Toward the identification of species in the plasma deposition of hydrogenated amorphous silicon alloys FJ Kampas, RW Griffith Solar Cells 2 (4), 385-400, 1980 | 67 | 1980 |
| Reactions of atomic hydrogen in the deposition of hydrogenated amorphous silicon by glow discharge and reactive sputtering FJ Kampas Journal of Applied Physics 53 (9), 6408-6412, 1982 | 65 | 1982 |
| Current transport in amorphous silicon n/p junctions and their application as ‘‘tunnel’’ junctions in tandem solar cells SS Hegedus, F Kampas, J Xi Applied Physics Letters 67 (6), 813-815, 1995 | 64 | 1995 |
| Modifications in optoelectronic behavior of plasma-deposited amorphous semiconductor alloys via impurity incorporation RW Griffith, FJ Kampas, PE Vanier, MD Hirsch Journal of Non-Crystalline Solids 35, 391-396, 1980 | 63 | 1980 |
| Chemical reactions in plasma deposition FJ Kampas Semiconductors and semimetals 21, 153-177, 1984 | 45 | 1984 |
| Nonlinear optimization in mathematica with mathoptimizer professional JD Pintér, FJ Kampas Mathematica in Education and Research 10 (2), 1-18, 2005 | 35 | 2005 |
| Light‐induced excess conductivity and the role of argon in the deposition of doping‐modulated amorphous silicon superlattices FC Su, S Levine, PE Vanier, FJ Kampas Applied physics letters 47 (6), 612-614, 1985 | 32 | 1985 |
| A partially stabilized photoeletrochemical cell using hydrogenated amorphous silicon photoanodes coated with thin films of polypyrrole T Skotheim, I Lundström, AE Delahoy, FJ Kampas, PE Vanier Applied Physics Letters 40 (3), 281-283, 1982 | 32 | 1982 |
| Evidence of chemical ordering in amorphous hydrogenated silicon carbide J Tafto, FJ Kampas Applied physics letters 46 (10), 949-951, 1985 | 31 | 1985 |
| Porphyrin films. Electroluminescence of octaethylporphin FJ Kampas, M Gouterman Chemical Physics Letters 48 (2), 233-236, 1977 | 30 | 1977 |
| Octaethylporphin films. II absorption and emission of amorphous films FJ Kampas, M Gouterman Journal of Luminescence 14 (3), 121-129, 1976 | 25 | 1976 |
Janos D. PinterRutgers Universityכתובת אימייל מאומתת בדומיין business.rutgers.edu
