עקוב אחר
Jeffrey Bokor
Jeffrey Bokor
Professor of electrical engineering and computer sciences, University of California, Berkeley
כתובת אימייל מאומתת בדומיין eecs.berkeley.edu
כותרת
צוטט על ידי
צוטט על ידי
שנה
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
D Hisamoto, WC Lee, J Kedzierski, H Takeuchi, K Asano, C Kuo, ...
IEEE transactions on electron devices 47 (12), 2320-2325, 2000
23362000
MoS2 transistors with 1-nanometer gate lengths
SB Desai, SR Madhvapathy, AB Sachid, JP Llinas, Q Wang, GH Ahn, ...
Science 354 (6308), 99-102, 2016
14232016
Sub 50-nm finfet: Pmos
X Huang, WC Lee, C Kuo, D Hisamoto, L Chang, J Kedzierski, ...
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
8501999
FinFET scaling to 10 nm gate length
B Yu, L Chang, S Ahmed, H Wang, S Bell, CY Yang, C Tabery, C Ho, ...
Digest. International Electron Devices Meeting,, 251-254, 2002
8412002
Electron thermalization in gold
WS Fann, R Storz, HWK Tom, J Bokor
Physical Review B 46 (20), 13592, 1992
8281992
Ultralow contact resistance between semimetal and monolayer semiconductors
PC Shen, C Su, Y Lin, AS Chou, CC Cheng, JH Park, MH Chiu, AY Lu, ...
Nature 593 (7858), 211-217, 2021
7032021
Direct measurement of nonequilibrium electron-energy distributions in subpicosecond laser-heated gold films
WS Fann, R Storz, HWK Tom, J Bokor
Physical review letters 68 (18), 2834, 1992
6961992
Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
C Hu, TJ King, V Subramanian, L Chang, X Huang, YK Choi, ...
US Patent 6,413,802, 2002
6802002
Direct chemical vapor deposition of graphene on dielectric surfaces
A Ismach, C Druzgalski, S Penwell, A Schwartzberg, M Zheng, A Javey, ...
Nano letters 10 (5), 1542-1548, 2010
6342010
Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI
F Assaderaghi, D Sinitsky, SA Parke, J Bokor, PK Ko, C Hu
IEEE Transactions on Electron Devices 44 (3), 414-422, 1997
6191997
Sub-50 nm P-channel FinFET
X Huang, WC Lee, C Kuo, D Hisamoto, L Chang, J Kedzierski, ...
IEEE Transactions on Electron Devices 48 (5), 880-886, 2001
6142001
Gold nanoparticle self-similar chain structure organized by DNA origami
B Ding, Z Deng, H Yan, S Cabrini, RN Zuckermann, J Bokor
Journal of the American Chemical Society 132 (10), 3248-3249, 2010
6052010
Diameter-dependent electron mobility of InAs nanowires
AC Ford, JC Ho, YL Chueh, YC Tseng, Z Fan, J Guo, J Bokor, A Javey
Nano Letters 9 (1), 360-365, 2009
4762009
Sub-20 nm CMOS FinFET technologies
YK Choi, N Lindert, P Xuan, S Tang, D Ha, E Anderson, TJ King, J Bokor, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
4582001
Formation of bandgap and subbands in graphene nanomeshes with sub-10 nm ribbon width fabricated via nanoimprint lithography
X Liang, YS Jung, S Wu, A Ismach, DL Olynick, S Cabrini, J Bokor
Nano letters 10 (7), 2454-2460, 2010
4252010
A folded-channel MOSFET for deep-sub-tenth micron era
D Hisamoto, WC Lee, J Kedzierski, E Anderson, H Takeuchi, K Asano, ...
IEDM Tech. Dig 1998, 1032-1034, 1998
4211998
Ultra-thin body SOI MOSFET for deep-sub-tenth micron era
YK Choi, K Asano, N Lindert, V Subramanian, TJ King, J Bokor, C Hu
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
3801999
Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons
JP Llinas, A Fairbrother, G Borin Barin, W Shi, K Lee, S Wu, B Yong Choi, ...
Nature communications 8 (1), 633, 2017
3792017
Nanofocusing in a metal–insulator–metal gap plasmon waveguide with a three-dimensional linear taper
H Choo, MK Kim, M Staffaroni, TJ Seok, J Bokor, S Cabrini, PJ Schuck, ...
Nature Photonics 6 (12), 838-844, 2012
3742012
Extremely scaled silicon nano-CMOS devices
L Chang, Y Choi, D Ha, P Ranade, S Xiong, J Bokor, C Hu, TJ King
Proceedings of the IEEE 91 (11), 1860-1873, 2003
3692003
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מאמרים 1–20