Matthew D. Pickett
Title
Cited by
Cited by
Year
Memristive switching mechanism for metal/oxide/metal nanodevices
JJ Yang, MD Pickett, X Li, DAA Ohlberg, DR Stewart, RS Williams
Nature nanotechnology 3 (7), 429-433, 2008
27912008
The mechanism of electroforming of metal oxide memristive switches
JJ Yang, F Miao, MD Pickett, DAA Ohlberg, DR Stewart, CN Lau, ...
Nanotechnology 20 (21), 215201, 2009
9022009
Switching dynamics in titanium dioxide memristive devices
MD Pickett, DB Strukov, JL Borghetti, JJ Yang, GS Snider, DR Stewart, ...
Journal of Applied Physics 106 (7), 074508, 2009
7322009
A scalable neuristor built with Mott memristors
MD Pickett, G Medeiros-Ribeiro, RS Williams
Nature materials 12 (2), 114-117, 2013
6452013
High switching endurance in TaOx memristive devices
JJ Yang, MX Zhang, JP Strachan, F Miao, MD Pickett, RD Kelley, ...
Applied Physics Letters 97 (23), 232102-232102-3, 2010
6122010
Direct identification of the conducting channels in a functioning memristive device
JP Strachan, MD Pickett, JJ Yang, S Aloni, AL David Kilcoyne, ...
Advanced materials 22 (32), 3573-3577, 2010
3422010
Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices
MD Pickett, RS Williams
Nanotechnology 23 (21), 215202, 2012
2582012
SPICE modeling of memristors
H Abdalla, MD Pickett
2011 IEEE International Symposium of Circuits and Systems (ISCAS), 1832-1835, 2011
2512011
Engineering nonlinearity into memristors for passive crossbar applications
J Joshua Yang, MX Zhang, MD Pickett, F Miao, J Paul Strachan, WD Li, ...
Applied Physics Letters 100 (11), 113501, 2012
2222012
Chemical natures and distributions of metal impurities in multicrystalline silicon materials
T Buonassisi, AA Istratov, MD Pickett, M Heuer, JP Kalejs, G Hahn, ...
Progress in Photovoltaics: Research and Applications 14 (6), 513-531, 2006
2212006
Control of metal impurities in “dirty” multicrystalline silicon for solar cells
AA Istratov, T Buonassisi, MD Pickett, M Heuer, ER Weber
Materials Science and Engineering: B 134 (2-3), 282-286, 2006
1692006
Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration
T Buonassisi, AA Istratov, MD Pickett, MA Marcus, TF Ciszek, ER Weber
Applied Physics Letters 89 (4), 042102, 2006
1602006
Local Temperature Redistribution and Structural Transition During Joule‐Heating‐Driven Conductance Switching in VO2
S Kumar, MD Pickett, JP Strachan, G Gibson, Y Nishi, RS Williams
Advanced Materials 25 (42), 6128-6132, 2013
1512013
State dynamics and modeling of tantalum oxide memristors
JP Strachan, AC Torrezan, F Miao, MD Pickett, JJ Yang, W Yi, ...
IEEE Transactions on Electron Devices 60 (7), 2194-2202, 2013
1462013
Metal/TiO 2 interfaces for memristive switches
JJ Yang, JP Strachan, F Miao, MX Zhang, MD Pickett, W Yi, DAA Ohlberg, ...
Applied physics A 102 (4), 785-789, 2011
1352011
Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors
F Miao, W Yi, I Goldfarb, JJ Yang, MX Zhang, MD Pickett, JP Strachan, ...
ACS nano 6 (3), 2312-2318, 2012
1282012
Electrical transport and thermometry of electroformed titanium dioxide memristive switches
J Borghetti, DB Strukov, MD Pickett, JJ Yang, DR Stewart, RS Williams
Journal of Applied Physics 106 (12), 124504, 2009
1172009
Iron point defect reduction in multicrystalline silicon solar cells
MD Pickett, T Buonassisi
Applied Physics Letters 92 (12), 122103, 2008
1062008
Feedback write scheme for memristive switching devices
W Yi, F Perner, MS Qureshi, H Abdalla, MD Pickett, JJ Yang, MXM Zhang, ...
Applied physics A 102 (4), 973-982, 2011
1012011
Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal‐Oxide‐Metal System
MD Pickett, J Borghetti, JJ Yang, G Medeiros‐Ribeiro, RS Williams
Advanced Materials 23 (15), 1730-1733, 2011
1002011
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Articles 1–20