| Layer-controlled CVD growth of large-area two-dimensional MoS 2 films J Jeon, SK Jang, SM Jeon, G Yoo, YH Jang, JH Park, S Lee Nanoscale 7 (5), 1688-1695, 2015 | 490 | 2015 |
| Vertical Si-Nanowire-Type Tunneling FETs With Low Subthreshold Swing () at Room Temperature R Gandhi, Z Chen, N Singh, K Banerjee, S Lee IEEE Electron Device Letters 32 (4), 437-439, 2011 | 400 | 2011 |
| Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic J Shim, S Oh, DH Kang, SH Jo, MH Ali, WY Choi, K Heo, J Jeon, S Lee, ... Nature communications 7 (1), 13413, 2016 | 369 | 2016 |
| Surface group modification and carrier transport properties of layered transition metal carbides (Ti 2 CT x, T:–OH,–F and–O) S Lai, J Jeon, SK Jang, J Xu, YJ Choi, JH Park, E Hwang, S Lee Nanoscale 7 (46), 19390-19396, 2015 | 324 | 2015 |
| Dye-Sensitized MoS2 Photodetector with Enhanced Spectral Photoresponse SH Yu, Y Lee, SK Jang, J Kang, J Jeon, C Lee, JY Lee, H Kim, E Hwang, ... ACS nano 8 (8), 8285-8291, 2014 | 316 | 2014 |
| A platform for large‐scale graphene electronics–CVD growth of single‐layer graphene on CVD‐grown hexagonal boron nitride M Wang, SK Jang, WJ Jang, M Kim, SY Park, SW Kim, SJ Kahng, JY Choi, ... Advanced Materials 25 (19), 2746-2752, 2013 | 308 | 2013 |
| High‐performance transition metal dichalcogenide photodetectors enhanced by self‐assembled monolayer doping DH Kang, MS Kim, J Shim, J Jeon, HY Park, WS Jung, HY Yu, CH Pang, ... Advanced Functional Materials 25 (27), 4219-4227, 2015 | 299 | 2015 |
| Ge-photodetectors for Si-based optoelectronic integration J Wang, S Lee Sensors 11 (1), 696-718, 2011 | 290 | 2011 |
| An ultrahigh‐performance photodetector based on a perovskite–transition‐metal‐dichalcogenide hybrid structure DH Kang, SR Pae, J Shim, G Yoo, J Jeon, JW Leem, JS Yu, S Lee, B Shin, ... Advanced Materials 28 (35), 7799-7806, 2016 | 268 | 2016 |
| High‐Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment J Shim, A Oh, DH Kang, S Oh, SK Jang, J Jeon, MH Jeon, M Kim, C Choi, ... Advanced Materials 28 (32), 6985-6992, 2016 | 229 | 2016 |
| MXene Electrode for the Integration of WSe2 and MoS2 Field Effect Transistors J Xu, J Shim, JH Park, S Lee Advanced Functional Materials 26 (29), 5328-5334, 2016 | 215 | 2016 |
| CMOS-Compatible Vertical-Silicon-Nanowire Gate-All-Around p-Type Tunneling FETs With -mV/decade Subthreshold Swing R Gandhi, Z Chen, N Singh, K Banerjee, S Lee IEEE Electron Device Letters 32 (11), 1504-1506, 2011 | 215 | 2011 |
| Plasma-treated thickness-controlled two-dimensional black phosphorus and its electronic transport properties J Jia, SK Jang, S Lai, J Xu, YJ Choi, JH Park, S Lee ACS nano 9 (9), 8729-8736, 2015 | 184 | 2015 |
| Controllable nondegenerate p-type doping of tungsten diselenide by octadecyltrichlorosilane DH Kang, J Shim, SK Jang, J Jeon, MH Jeon, GY Yeom, WS Jung, ... ACS nano 9 (2), 1099-1107, 2015 | 164 | 2015 |
| A High‐Performance WSe2/h‐BN Photodetector using a Triphenylphosphine (PPh3)‐Based n‐Doping Technique SH Jo, DH Kang, J Shim, J Jeon, MH Jeon, G Yoo, J Kim, J Lee, GY Yeom, ... Advanced Materials 28 (24), 4824-4831, 2016 | 161 | 2016 |
| Epitaxial Synthesis of Molybdenum Carbide and Formation of a Mo2C/MoS2 Hybrid Structure via Chemical Conversion of Molybdenum Disulfide J Jeon, Y Park, S Choi, J Lee, SS Lim, BH Lee, YJ Song, JH Cho, ... ACS nano 12 (1), 338-346, 2018 | 160 | 2018 |
| Synthesis and characterization of hexagonal boron nitride as a gate dielectric SK Jang, J Youn, YJ Song, S Lee Scientific reports 6 (1), 30449, 2016 | 160 | 2016 |
| Single crystalline film of hexagonal boron nitride atomic monolayer by controlling nucleation seeds and domains Q Wu, JH Park, S Park, SJ Jung, H Suh, N Park, W Wongwiriyapan, S Lee, ... Scientific reports 5 (1), 16159, 2015 | 149 | 2015 |
| Chip-level thermoelectric power generators based on high-density silicon nanowire array prepared with top-down CMOS technology Y Li, K Buddharaju, N Singh, GQ Lo, SJ Lee IEEE Electron Device Letters 32 (5), 674-676, 2011 | 147 | 2011 |
| MOS characteristics of ultra thin rapid thermal CVD ZrO/sub 2/and Zr silicate gate dielectrics CH Lee, HF Luan, WP Bai, SJ Lee, TS Jeon, Y Senzaki, D Roberts, ... International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 132 | 2000 |
