Vitalii Sichkovskyi
Vitalii Sichkovskyi
Institute of Nanostructure Technologies and Analytics, University of Kassel
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Cited by
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Large linewidth reduction in semiconductor lasers based on atom-like gain material
T Septon, A Becker, S Gosh, G Shtendel, V Sichkovskyi, F Schnabel, ...
Optica 6 (8), 1071-1077, 2019
Rabi oscillations and self-induced transparency in InAs/InP quantum dot semiconductor optical amplifier operating at room temperature
O Karni, A Capua, G Eisenstein, V Sichkovskyi, V Ivanov, JP Reithmaier
Optics Express 21 (22), 26786-26796, 2013
Temperature-Insensitive High-Speed Directly Modulated 1.55-Quantum Dot Lasers
S Banyoudeh, A Abdollahinia, O Eyal, F Schnabel, V Sichkovskyi, ...
IEEE Photonics Technology Letters 28 (21), 2451-2454, 2016
High-gain wavelength-stabilized 1.55 μm InAs/InP (100) based lasers with reduced number of quantum dot active layers
VI Sichkovskyi, M Waniczek, JP Reithmaier
Applied Physics Letters 102 (22), 2013
Widely tunable narrow-linewidth 1.5 μm light source based on a monolithically integrated quantum dot laser array
A Becker, V Sichkovskyi, M Bjelica, A Rippien, F Schnabel, M Kaiser, ...
Applied Physics Letters 110 (18), 2017
Coherent control in a semiconductor optical amplifier operating at room temperature
A Capua, O Karni, G Eisenstein, V Sichkovskyi, V Ivanov, JP Reithmaier
Nature Communications 5 (1), 5025, 2014
Ultraviolet detectors based on ZnO: N thin films with different contact structures
A Ievtushenko, G Lashkarev, V Lazorenko, V Karpyna, V Sichkovskyi, ...
Acta Physica Polonica A 114 (5), 1123-1129, 2008
Anomalies of magnetic properties of layered crystals InSe containing Mn
GV Lashkarev, VV Slynko, ZD Kovalyuk, VI Sichkovskyi, MV Radchenko, ...
Materials Science and Engineering: C 27 (5-8), 1052-1055, 2007
Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well‐Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers
W Rudno‐Rudziński, M Syperek, A Maryński, J Andrzejewski, J Misiewicz, ...
physica status solidi (a) 215 (4), 1700455, 2018
Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperatures
O Eyal, A Willinger, S Banyoudeh, F Schanbel, V Sichkovskyi, ...
Optics Express 25 (22), 27262-27269, 2017
Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP (001) coupled quantum dots-quantum well structure emitting at 1.55 μm
M Syperek, J Andrzejewski, E Rogowicz, J Misiewicz, S Bauer, ...
Applied Physics Letters 112 (22), 2018
1.5-μm indium phosphide-based quantum dot lasers and optical amplifiers: The impact of atom-like optical gain material for optoelectronics devices
S Bauer, V Sichkovskyi, O Eyal, T Septon, A Becker, I Khanonkin, ...
IEEE Nanotechnology Magazine 15 (2), 23-36, 2021
Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μm high-speed lasers
S Bauer, V Sichkovskyi, JP Reithmaier
Journal of Crystal Growth 491, 20-25, 2018
Diluted ferromagnetic semiconductors as spintronic materials
GV Lashkarev, MV Radchenko, VA Karpina, VI Sichkovskyi
Low Temperature Physics 33 (2), 165-173, 2007
Diluted magnetic semiconductors based on II–VI, III–VI, and IV–VI compounds
GV Lashkarev, VI Sichkovskiyi, MV Radchenko, VA Karpina, PE Butorin, ...
Low Temperature Physics 35 (1), 62-70, 2009
Temperature resistant fast InxGa1−xAs / GaAs quantum dot saturable absorber for the epitaxial integration into semiconductor surface emitting lasers
T Finke, J Nürnberg, V Sichkovskyi, M Golling, U Keller, JP Reithmaier
Optics express 28 (14), 20954-20966, 2020
Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots
I Khanonkin, AK Mishra, O Karni, V Mikhelashvili, S Banyoudeh, ...
AIP Advances 7 (3), 2017
1.5-um quantum dot laser material with high temperature stability of threshold current density and external differential efficiency
S Banyoudeh, A Abdollahinia, V Sichkovskyi, JP Reithmaier
Novel In-Plane Semiconductor Lasers XV 9767, 68-74, 2016
Narrow-linewidth 1.5-um quantum dot distributed feedback lasers
A Becker, V Sichkovskyi, M Bjelica, O Eyal, P Baum, A Rippien, ...
Novel In-Plane Semiconductor Lasers XV 9767, 99-106, 2016
Nanomaterials based on CdS nanoparticles in polyethylene matrix
MV Radchenko, GV Lashkarev, VI Sichkovskyi, AA Arshakuni, SP Gubin, ...
Inorganic Materials 45, 468-473, 2009
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