Vitalii Sichkovskyi
Vitalii Sichkovskyi
Institute of Nanostructure Technologies and Analytics, University of Kassel
Verified email at uni-kassel.de
Title
Cited by
Cited by
Year
Rabi oscillations and self-induced transparency in InAs/InP quantum dot semiconductor optical amplifier operating at room temperature
O Karni, A Capua, G Eisenstein, V Sichkovskyi, V Ivanov, JP Reithmaier
Optics express 21 (22), 26786-26796, 2013
382013
High-gain wavelength-stabilized 1.55 μm InAs/InP(100) based lasers with reduced number of quantum dot active layers
VI Sichkovskyi, M Waniczek, JP Reithmaier
Applied Physics Letters 102 (22), 221117, 2013
332013
Temperature-Insensitive High-Speed Directly Modulated 1.55-Quantum Dot Lasers
S Banyoudeh, A Abdollahinia, O Eyal, F Schnabel, V Sichkovskyi, ...
IEEE Photonics Technology Letters 28 (21), 2451-2454, 2016
282016
Large linewidth reduction in semiconductor lasers based on atom-like gain material
T Septon, A Becker, S Gosh, G Shtendel, V Sichkovskyi, F Schnabel, ...
Optica 6 (8), 1071-1077, 2019
232019
Coherent control in a semiconductor optical amplifier operating at room temperature
A Capua, O Karni, G Eisenstein, V Sichkovskyi, V Ivanov, JP Reithmaier
Nature communications 5 (1), 1-7, 2014
232014
Ultraviolet detectors based on ZnO: N thin films with different contact structures
A Ievtushenko, G Lashkarev, V Lazorenko, V Karpyna, V Sichkovskyi, ...
Acta Physica Polonica A 114 (5), 1123-1129, 2008
232008
Widely tunable narrow-linewidth 1.5 μm light source based on a monolithically integrated quantum dot laser array
A Becker, V Sichkovskyi, M Bjelica, A Rippien, F Schnabel, M Kaiser, ...
Applied Physics Letters 110 (18), 181103, 2017
222017
Anomalies of magnetic properties of layered crystals InSe containing Mn
GV Lashkarev, VV Slynko, ZD Kovalyuk, VI Sichkovskyi, MV Radchenko, ...
Materials Science and Engineering: C 27 (5-8), 1052-1055, 2007
202007
Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well‐Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers
W Rudno‐Rudziński, M Syperek, A Maryński, J Andrzejewski, J Misiewicz, ...
physica status solidi (a) 215 (4), 1700455, 2018
142018
Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm
M Syperek, J Andrzejewski, E Rogowicz, J Misiewicz, S Bauer, ...
Applied Physics Letters 112 (22), 221901, 2018
132018
Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots
I Khanonkin, AK Mishra, O Karni, V Mikhelashvili, S Banyoudeh, ...
AIP Advances 7 (3), 035122, 2017
112017
Narrow-linewidth 1.5-um quantum dot distributed feedback lasers
A Becker, V Sichkovskyi, M Bjelica, O Eyal, P Baum, A Rippien, ...
Novel In-Plane Semiconductor Lasers XV 9767, 97670Q, 2016
112016
Nanomaterials based on CdS nanoparticles in polyethylene matrix
MV Radchenko, GV Lashkarev, VI Sichkovskyi, AA Arshakuni, SP Gubin, ...
Inorganic Materials 45 (5), 468-473, 2009
112009
Diluted ferromagnetic semiconductors as spintronic materials
GV Lashkarev, MV Radchenko, VA Karpina, VI Sichkovskyi
Low Temperature Physics 33 (2), 165-173, 2007
112007
Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperatures
O Eyal, A Willinger, S Banyoudeh, F Schanbel, V Sichkovskyi, ...
Optics express 25 (22), 27262-27269, 2017
102017
Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μm high-speed lasers
S Bauer, V Sichkovskyi, JP Reithmaier
Journal of Crystal Growth 491, 20-25, 2018
92018
Magnetic and electrical properties of ferromagnetic nanocomposites based on Co nanoparticles in Al2O3 matrix
MV Radchenko, GV Lashkarev, ME Bugaiova, VI Sichkovskyi, ...
physica status solidi (b) 248 (7), 1619-1622, 2011
92011
Diluted magnetic semiconductors based on II–VI, III–VI, and IV–VI compounds
GV Lashkarev, VI Sichkovskiyi, MV Radchenko, VA Karpina, PE Butorin, ...
Low Temperature Physics 35 (1), 62-70, 2009
82009
Diluted magnetic semiconductors based on II–VI, III–VI, and IV–VI compounds
GV Lashkarev, VI Sichkovskiyi, MV Radchenko, VA Karpina, PE Butorin, ...
Low Temperature Physics 35 (1), 62-70, 2009
82009
Narrow linewidth InAs/InP quantum dot DFB laser
T Septon, S Gosh, A Becker, V Sichkovskyi, F Schnabel, A Rippien, ...
Optical Fiber Communication Conference, W3A. 8, 2019
72019
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