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Sergey Nikishin
Sergey Nikishin
Professor of Electrical Engineering, Texas Tech University
Verified email at ttu.edu
Title
Cited by
Cited by
Year
High quality GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia
SA Nikishin, NN Faleev, VG Antipov, S Francoeur, L Grave de Peralta, ...
Applied physics letters 75 (14), 2073-2075, 1999
2971999
Luminescence of as-grown and thermally annealed GaAsN/GaAs
S Francoeur, G Sivaraman, Y Qiu, S Nikishin, H Temkin
Applied physics letters 72 (15), 1857-1859, 1998
1901998
High quality GaN–InGaN heterostructures grown on (111) silicon substrates
JW Yang, CJ Sun, Q Chen, MZ Anwar, M Asif Khan, SA Nikishin, ...
Applied physics letters 69 (23), 3566-3568, 1996
1411996
Raman studies of nitrogen incorporation in
T Prokofyeva, T Sauncy, M Seon, M Holtz, Y Qiu, S Nikishin, H Temkin
Applied physics letters 73 (10), 1409-1411, 1998
1331998
Vibrational properties of AlN grown on (111)-oriented silicon
T Prokofyeva, M Seon, J Vanbuskirk, M Holtz, SA Nikishin, NN Faleev, ...
Physical Review B 63 (12), 125313, 2001
1192001
Si-doped AlxGa1− xN (0.56⩽×⩽ 1) layers grown by molecular beam epitaxy with ammonia
B Borisov, V Kuryatkov, Y Kudryavtsev, R Asomoza, S Nikishin, DY Song, ...
Applied physics letters 87 (13), 2005
1172005
gate dielectric with 0.5 nm equivalent oxide thickness
H Harris, K Choi, N Mehta, A Chandolu, N Biswas, G Kipshidze, ...
Applied physics letters 81 (6), 1065-1067, 2002
1172002
AlN/AlGaInN superlattice light-emitting diodes at 280 nm
G Kipshidze, V Kuryatkov, K Zhu, B Borisov, M Holtz, S Nikishin, H Temkin
Journal of applied physics 93 (3), 1363-1366, 2003
1102003
AlGaInN-based ultraviolet light-emitting diodes grown on Si (111)
G Kipshidze, V Kuryatkov, B Borisov, M Holtz, S Nikishin, H Temkin
Applied Physics Letters 80 (20), 3682-3684, 2002
1092002
Excitons bound to nitrogen clusters in GaAsN
S Francoeur, SA Nikishin, C Jin, Y Qiu, H Temkin
Applied physics letters 75 (11), 1538-1540, 1999
1081999
Ordering effects in Raman spectra of coherently strained GaAs 1− x N x
AM Mintairov, PA Blagnov, VG Melehin, NN Faleev, JL Merz, Y Qiu, ...
Physical Review B 56 (24), 15836, 1997
1021997
High-quality AlN grown on Si (111) by gas-source molecular-beam epitaxy with ammonia
SA Nikishin, VG Antipov, S Francoeur, NN Faleev, GA Seryogin, ...
Applied physics letters 75 (4), 484-486, 1999
991999
Method of epitaxial growth of high quality nitride layers on silicon substrates
H Temkin, SA Nikishin
US Patent 6,391,748, 2002
972002
Selective growth of high quality GaN on Si (111) substrates
M Seon, T Prokofyeva, M Holtz, SA Nikishin, NN Faleev, H Temkin
Applied physics letters 76 (14), 1842-1844, 2000
962000
The anodization voltage influence on the properties of TiO2 nanotubes grown by electrochemical oxidation
Y Alivov, M Pandikunta, S Nikishin, ZY Fan
Nanotechnology 20 (22), 225602, 2009
842009
Composition dependence of the optical phonon energies in hexagonal
M Holtz, T Prokofyeva, M Seon, K Copeland, J Vanbuskirk, S Williams, ...
Journal of applied Physics 89 (12), 7977-7982, 2001
832001
Evolution of surface roughness of AlN and GaN induced by inductively coupled plasma etching
K Zhu, V Kuryatkov, B Borisov, J Yun, G Kipshidze, SA Nikishin, H Temkin, ...
Journal of applied physics 95 (9), 4635-4641, 2004
732004
Mg and O codoping in p-type GaN and
G Kipshidze, V Kuryatkov, B Borisov, Y Kudryavtsev, R Asomoza, ...
Applied physics letters 80 (16), 2910-2912, 2002
732002
Growth of single phase GaAs1− xNx with high nitrogen concentration by metal–organic molecular beam epitaxy
Y Qiu, SA Nikishin, H Temkin, NN Faleev, YA Kudriavtsev
Applied physics letters 70 (24), 3242-3244, 1997
721997
Solar-blind ultraviolet photodetectors based on superlattices of AlN/AlGa (In) N
V Kuryatkov, A Chandolu, B Borisov, G Kipshidze, K Zhu, S Nikishin, ...
Applied physics letters 82 (9), 1323-1325, 2003
702003
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