| Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements J Bruley, JO Chu, KL Lee, AS Ozcan, PM Solomon, JB Yau US Patent 10,269,714, 2019 | 360 | 2019 |
| Sharp reduction of contact resistivities by effective Schottky barrier lowering with silicides as diffusion sources Z Zhang, F Pagette, C D'emic, B Yang, C Lavoie, Y Zhu, M Hopstaken, ... IEEE Electron Device Letters 31 (7), 731-733, 2010 | 309 | 2010 |
| An off-normal fibre-like texture in thin films on single-crystal substrates C Detavernier, AS Özcan, J Jordan-Sweet, EA Stach, J Tersoff, FM Ross, ... Nature 426 (6967), 641-645, 2003 | 230 | 2003 |
| Real-time x-ray studies of Mo-seeded Si nanodot formation during ion bombardment G Ozaydin, AS Özcan, Y Wang, KF Ludwig, H Zhou, RL Headrick, ... Applied Physics Letters 87 (16), 2005 | 156 | 2005 |
| Wafer-scale power delivery CE Cox, H Huels, A Kumar, XH Liu, AS Ozcan, WW Wilcke US Patent 10,546,809, 2020 | 91* | 2020 |
| Adsorption kinetics and isotherms of anionic dye of reactive blue 19 from aqueous solutions onto DTMA-sepiolite A Ozcan, AS Ozcan, O Gok Hazardous Materials and Wastewater—Treatment, Removal and Analysis, 2007 | 60 | 2007 |
| Challenges of nickel silicidation in CMOS technologies N Breil, C Lavoie, A Ozcan, F Baumann, N Klymko, K Nummy, B Sun, ... Microelectronic Engineering 137, 79-87, 2015 | 53 | 2015 |
| Ultra low contact resistivities for CMOS beyond 10-nm node Z Zhang, SO Koswatta, SW Bedell, A Baraskar, M Guillorn, ... IEEE electron device letters 34 (6), 723-725, 2013 | 53 | 2013 |
| Strained Si channel MOSFETs with embedded silicon carbon formed by solid phase epitaxy Y Liu, O Gluschenkov, J Li, A Madan, A Ozcan, B Kim, T Dyer, ... 2007 IEEE Symposium on VLSI Technology, 44-45, 2007 | 53 | 2007 |
| Wavelength tunability of ion-bombardment-induced ripples on sapphire H Zhou, Y Wang, L Zhou, RL Headrick, AS Özcan, Y Wang, G Özaydin, ... Physical Review B—Condensed Matter and Materials Physics 75 (15), 155416, 2007 | 53 | 2007 |
| Complex and incommensurate ordering in Al0. 72Ga0. 28N thin films grown by plasma-assisted molecular beam epitaxy Y Wang, AS Özcan, KF Ludwig, A Bhattacharyya, TD Moustakas, L Zhou, ... Applied physics letters 88 (18), 2006 | 47 | 2006 |
| Filopodia: a rapid structural plasticity substrate for fast learning AS Ozcan Frontiers in synaptic neuroscience 9, 12, 2017 | 46 | 2017 |
| Contacts in advanced CMOS: History and emerging challenges C Lavoie, P Adusumilli, AV Carr, JSJ Sweet, AS Ozcan, E Levrau, N Breil, ... ECS Transactions 77 (5), 59, 2017 | 41 | 2017 |
| Dual Silicide Process Compatible with Replacement-Metal-Gate E Alptekin, SO Koswatta, C Lavoie, AS Ozcan, KT Schonenberg, ... US Patent App. 14/010,891, 2014 | 36 | 2014 |
| Material removal process for self-aligned contacts SK Kanakasabapathy, AS Ozcan US Patent 9,761,455, 2017 | 35* | 2017 |
| Texture of tetragonal α− FeSi 2 films on Si (001) C Detavernier, C Lavoie, J Jordan-Sweet, AS Özcan Physical Review B 69 (17), 174106, 2004 | 34 | 2004 |
| Interface roughness evolution in sputtered WSi2∕ Si multilayers YP Wang, H Zhou, L Zhou, RL Headrick, AT Macrander, AS Özcan Journal of applied physics 101 (2), 2007 | 32 | 2007 |
| Fin field effect transistor with merged metal semiconductor alloy regions E Alptekin, AM Ozbek, AS Ozcan, Y Wang US Patent App. 14/482,764, 2015 | 31 | 2015 |
| Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1− xPtx silicide films Z Zhang, B Yang, Y Zhu, S Gaudet, S Rossnagel, AJ Kellock, A Ozcan, ... Applied Physics Letters 97 (25), 2010 | 31 | 2010 |
| Ti and NiPt/Ti liner silicide contacts for advanced technologies P Adusumilli, E Alptekin, M Raymond, N Breil, F Chafik, C Lavoie, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 30 | 2016 |
Christian LavoieManager Advanced Characterization, IBM T.J. Watson Research Center, Yorktown Heights, NYVerified email at us.ibm.com
