Aidong Shen
Title
Cited by
Cited by
Year
(Ga, Mn) As: a new diluted magnetic semiconductor based on GaAs
H Ohno, A Shen, F Matsukura, A Oiwa, A Endo, S Katsumoto, Y Iye
Applied Physics Letters 69 (3), 363-365, 1996
28341996
Transport properties and origin of ferromagnetism in (Ga, Mn) As
F Matsukura, H Ohno, A Shen, Y Sugawara
Physical Review B 57 (4), R2037, 1998
14461998
Magnetic Circular Dichroism Studies of Carrier-Induced Ferromagnetism in
B Beschoten, PA Crowell, I Malajovich, DD Awschalom, F Matsukura, ...
Physical review letters 83 (15), 3073, 1999
3551999
Epitaxy of (Ga, Mn) As, a new diluted magnetic semiconductor based on GaAs
A Shen, H Ohno, F Matsukura, Y Sugawara, N Akiba, T Kuroiwa, A Oiwa, ...
Journal of crystal growth 175, 1069-1074, 1997
2401997
Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga, Mn) As/GaAs
A Oiwa, S Katsumoto, A Endo, M Hirasawa, Y Iye, H Ohno, F Matsukura, ...
Solid state communications 103 (4), 209-213, 1997
2011997
Spontaneous splitting of ferromagnetic (Ga, Mn) As valence band observed by resonant tunneling spectroscopy
H Ohno, N Akiba, F Matsukura, A Shen, K Ohtani, Y Ohno
Applied physics letters 73 (3), 363-365, 1998
1951998
Growth of Cu2O thin films with high hole mobility by introducing a low-temperature buffer layer
BS Li, K Akimoto, A Shen
Journal of Crystal Growth 311 (4), 1102-1105, 2009
1102009
High absorption quantum-well infrared photodetectors
HC Liu, R Dudek, A Shen, E Dupont, CY Song, ZR Wasilewski, ...
Applied Physics Letters 79 (25), 4237-4239, 2001
912001
Metal–insulator transition and magnetotransport in III–V compound diluted magnetic semiconductors
Y Iye, A Oiwa, A Endo, S Katsumoto, F Matsukura, A Shen, H Ohno, ...
Materials Science and Engineering: B 63 (1-2), 88-95, 1999
911999
Interlayer exchange in (ga, mn) as/(al, ga) as/(ga, mn) as semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures
N Akiba, F Matsukura, A Shen, Y Ohno, H Ohno, A Oiwa, S Katsumoto, ...
Applied physics letters 73 (15), 2122-2124, 1998
711998
GaAs/AlGaAs quantum-well photodetector for visible and middle infrared dual-band detection
HC Liu, CY Song, A Shen, M Gao, ZR Wasilewski, M Buchanan
Applied Physics Letters 77 (16), 2437-2439, 2000
662000
Y. lye: Appi Phys
H Ohno, A Shen, F Matsukura, A Oiwa, A Endo, S Kutsumoto
Lett 69, 363, 1996
611996
Heterojunction wavelength-tailorable far-infrared photodetectors with response out to 70 μm
AGU Perera, SG Matsik, B Yaldiz, HC Liu, A Shen, M Gao, ZR Wasilewski, ...
Applied Physics Letters 78 (15), 2241-2243, 2001
562001
InAs self-organized quantum dashes grown on GaAs (211) B
SP Guo, H Ohno, A Shen, F Matsukura, Y Ohno
Applied physics letters 70 (20), 2738-2740, 1997
561997
Low-temperature molecular beam epitaxial growth of GaAs and (Ga, Mn) As
A Shen, F Matsukura, SP Guo, Y Sugawara, H Ohno, M Tani, H Abe, ...
Journal of crystal growth 201, 679-683, 1999
541999
Reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures under high As overpressure
A Shen, Y Horikoshi, H Ohno, SP Guo
Applied physics letters 71 (11), 1540-1542, 1997
531997
quantum cascade electroluminescence
KJ Franz, WO Charles, A Shen, AJ Hoffman, MC Tamargo, C Gmachl
Applied Physics Letters 92 (12), 121105, 2008
502008
Faraday rotation of ferromagnetic (Ga, Mn) As
T Kuroiwa, T Yasuda, F Matsukura, A Shen, Y Ohno, Y Segawa, H Ohno
Electronics Letters 34 (2), 190-192, 1998
481998
(Ga, Mn) As/GaAs diluted magnetic semiconductor superlattice structures prepared by molecular beam epitaxy
A Shen, H Ohno, F Matsukura, Y Sugawara, Y Ohno, N Akiba, T Kuroiwa
Japanese journal of applied physics 36 (2A), L73, 1997
431997
Strongly Anisotropic Hopping Conduction in (Ga, Mn) As/GaAs
S Katsumoto, A Oiwa, Y Iye, H Ohno, F Matsukura, A Shen, Y Sugawara
physica status solidi (b) 205 (1), 115-118, 1998
401998
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Articles 1–20