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Timothée Molière
Timothée Molière
Postdoctoral researcher at IES (Institut d'Electronique et des Systèmes, Montpellier)
Verified email at ies.univ-montp2.fr
Title
Cited by
Cited by
Year
Multidisciplinary characterization of new shield with metallic nanoparticles for composite aircrafts
M Jalali, T Molière, A Michaud, R Wuthrich
Composites Part B: Engineering 50, 309-317, 2013
212013
Dislocation and antiphase domain free microscale GaAs crystals grown on SiO2 from (001) Si nano-areas
C Renard, N Cherkasin, A Jaffré, L Vincent, A Michel, T Molière, ...
Applied Physics Letters 102 (19), 2013
212013
High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed
C Renard, T Molière, N Cherkashin, J Alvarez, L Vincent, A Jaffré, ...
Scientific Reports 6 (1), 25328, 2016
192016
Growth of high quality micrometer scale GaAs/Si crystals from (001) Si nano-areas in SiO2
C Renard, N Cherkashin, A Jaffre, T Molière, G Hallais, L Vincent, ...
Journal of crystal growth 401, 554-558, 2014
102014
GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium
T Molière, A Jaffré, J Alvarez, D Mencaraglia, JP Connolly, L Vincent, ...
Journal of Applied Physics 121 (3), 2017
52017
Growth route toward III-V multispectral solar cells on silicon
C Renard, N Cherkashin, A Jaffré, T Molière, L Vincent, A Michel, ...
arXiv preprint arXiv:1312.3570, 2013
42013
Morphology of GaAs crystals heterogeneously integrated on nominal (001) Si by epitaxial lateral overgrowth on tunnel oxide via Ge nano-seeding
M Coste, T Molière, N Cherkashin, G Hallais, L Vincent, D Bouchier, ...
Thin Solid Films 647, 13-18, 2018
22018
Erratum: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed
C Renard, T Molière, N Cherkashin, J Alvarez, L Vincent, A Jaffré, ...
Scientific Reports 6 (1), 29875, 2016
12016
Micro-photoluminescence investigation of the doping level in single GaAs crystals epitaxially grown on silicon for multijunction solar cells
A Jaffré, J Alvarez, D Mencaraglia, JP Connolly, T Molière, JP Kleider, ...
European Materials Research Society, 2017
2017
Intégration de matériaux III-V sur silicium nanostructuré pour application photovoltaïque
T Molière
Paris 6, 2016
2016
Structural, optoelectronic and electrical properties of GaAs microcrystals grown from (001) Si nano-areas
J Alvarez, A Jaffré, C Renard, N Cherkasin, T Molière, L Vincent, ...
Nano-Structures for Optics and Photonics: Optical Strategies for Enhancing …, 2015
2015
Route toward III-V multispectral solar cells on silicon
T Molière, C Renard, A Jaffré, L Vincent, D Bouchier, J Alvarez, JP Kleider, ...
E-MRS Spring Meeting 2014, 2014
2014
Caractérisations optiques et électriques de cristaux GaAs intégrés sur Si pour la réalisation de cellules solaires multispectrales III-V sur Silicium
A Jaffré, J Alvarez, T Molière, D Mencaraglia, J Connolly, C Renard, ...
JNPV 2013, nc, 2013
2013
Intégration de microcristaux de GaAs sur Si (100) sans domaines d'antiphase ni dislocation
T Molière, N Cherkasin, C Renard, A Michel, G Hallais, L Vincent, ...
JNPV 2013, nc, 2013
2013
III-V multispectral solar cells on silicon
C Renard, T Molière, A Jaffré, L Vincent, P Boucher, J Alvarez, JP Kleider, ...
E-MRS Spring Meeting 2013, nc, 2013
2013
Analyse du dopage dans un cristal unique GaAs épitaxié sur silicium en vue de la réalisation de cellule tandem GaAs/Si
T Molière, A Jaffré, J Alvarez, D Mencaraglia, JP Connolly, L Vincent, ...
Vers une cellule solaire tandem GaAs/Si
C Renard, T Molière, A Jaffré, L Vincent, J Alvarez, N Cherkashin, ...
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