| Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material LK Casias, CP Morath, EH Steenbergen, GA Umana-Membreno, ... Applied Physics Letters 116 (18), 2020 | 40 | 2020 |
| Growth of InAs–InAsSb SLS through the use of digital alloys T Schuler-Sandy, B Klein, L Casias, S Mathews, C Kadlec, Z Tian, E Plis, ... Journal of Crystal Growth 425, 29-32, 2015 | 20 | 2015 |
| Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications LK Casias, CP Morath, EH Steenbergen, PT Webster, JK Kim, VM Cowan, ... Infrared Physics & Technology 96, 184-191, 2019 | 10 | 2019 |
| Impact of temperature and gamma radiation on electron diffusion length and mobility in p-type InAs/GaSb superlattices J Lee, CJ Fredricksen, E Flitsiyan, RE Peale, L Chernyak, Z Taghipour, ... Journal of Applied Physics 123 (23), 2018 | 9 | 2018 |
| Transport in Mid-Wavelength Infrared (MWIR) p- and n-Type InAsSb and InAs/InAsSb Type-II Strained Layer Superlattices (T2SLs) for Infrared Detection LK Casias The University of New Mexico, 2019 | 5 | 2019 |
| Side wall passivation of LWIR P-type superlattice detectors using atomic layer deposition T Specht, S Myers, TJ Ronningen, A Kazemi, D Hollingshead, E Fuller, ... 2018 IEEE Research and Applications of Photonics In Defense Conference …, 2018 | 5 | 2018 |
| Post-etching mesa surface composition investigation of InAs/GaSb type-II strained layer superlattices using XPS characterization B Klein, K Artyushkova, E Plis, A Jamus, S Maji, L Casias, MN Kutty, ... Infrared Physics & Technology 70, 66-69, 2015 | 5 | 2015 |
| Potential for neutron and proton transmutation doping of GaN and Ga 2 O 3 JV Logan, EB Frantz, LK Casias, MP Short, CP Morath, PT Webster Materials Advances 1 (1), 45-53, 2020 | 3 | 2020 |
| Event-based sensing for the detection of modulated signals in degraded visual environments CA Pattyn, AW Edstrom, AL Sanchez, K Westlake, JD van der Laan, ... Image Sensing Technologies: Materials, Devices, Systems, and Applications X …, 2023 | | 2023 |
| Carrier concentration and in-plane mobility in both non-intentionally and Si-doped InAsSb and InAs/InAsSb type-II superlattice materials for space-based infrared detectors CP Morath, LK Casias, GA Umana-Membreno, PT Webster, PC Grant, ... Opto-Electronics Review, e144554-e144554, 2023 | | 2023 |
| Investigation of Event-based Sensing for Proliferation Detection. J Shank, AL Ames, LK Casias, K Hagopian Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2021 | | 2021 |
| Minority Carrier Lifetime Characterization of Optically Thin InAs/InAsSb Type-II Strained Layer Superlattices. LK Casias, J Olesberg, CN Kadlec, M Goldflam, P Webster, JF Klem, ... Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2020 | | 2020 |
| Optical Spectroscopy of Infrared Detector Materials under Hydrostatic Pressure S Zollner, New Mexico State University Las Cruces United States | | 2019 |
| Vertical Transport in InAs/GaSb and InAs/InAsSb Superlattices: 4.3 Electronic Sensing S Krishna, L Casias, Z Taghipour, G Balakrishnan, ... | | 2019 |
| Investigation of quantum efficiency in mid-wave infrared (MWIR) InAs/GaSb type-II strained layer superlattice (T2SL) detectors L Acosta, B Klein, ZB Tian, E Frantz, S Myers, N Gautam, T Schuler-Sandy, ... Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling …, 2014 | | 2014 |
Sanjay KrishnaProfessor and George R Smith Chair of Engineering, ECE Department, Ohio State UniversityVerified email at osu.edu
