Ga2O3Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio Y Liu, L Du, G Liang, W Mu, Z Jia, M Xu, Q Xin, X Tao, A Song IEEE Electron Device Letters 39 (11), 1696-1699, 2018 | 82 | 2018 |
Extremely high-gain source-gated transistors J Zhang, J Wilson, G Auton, Y Wang, M Xu, Q Xin, A Song Proceedings of the National Academy of Sciences 116 (11), 4843-4848, 2019 | 66 | 2019 |
Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths C Li, Z Ji, J Li, M Xu, H Xiao, X Xu Scientific reports 7 (1), 15301, 2017 | 43 | 2017 |
Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells Q Mu, M Xu, X Wang, Q Wang, Y Lv, Z Feng, X Xu, Z Ji Physica E: Low-dimensional Systems and Nanostructures 76, 1-5, 2016 | 33 | 2016 |
Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes Q Zhou, M Xu, H Wang Opto-Electronics Review 24 (1), 1-9, 2016 | 32 | 2016 |
“W-shaped” injection current dependence of electroluminescence linewidth in green InGaN/GaN-based LED grown on silicon substrate J Li, C Li, M Xu, Z Ji, K Shi, X Xu, H Li, X Xu Optics Express 25 (20), A871-A879, 2017 | 31 | 2017 |
High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact L Du, Q Xin, M Xu, Y Liu, W Mu, S Yan, X Wang, G Xin, Z Jia, XT Tao, ... IEEE Electron Device Letters 40 (3), 451-454, 2019 | 25 | 2019 |
Improved Efficiency of GaN-Based Green LED by a Nano-Micro Complex Patterned Sapphire Substrate Q Zhou, M Xu, Q Li, H Wang IEEE Photonics Technology Letters 29 (12), 983-986, 2017 | 24 | 2017 |
High-performance flexible Schottky diodes based on sputtered InGaZnO L Du, J Zhang, Y Li, M Xu, Q Wang, A Song, Q Xin IEEE Transactions on Electron Devices 65 (10), 4326-4333, 2018 | 23 | 2018 |
Enhanced localisation effect and reduced quantum-confined stark effect of carriers in InGaN/GaN multiple quantum wells embedded in nanopillars X Xu, Q Wang, C Li, Z Ji, M Xu, H Yang, X Xu Journal of Luminescence 203, 216-221, 2018 | 17 | 2018 |
Dual enhancement of light extraction efficiency of flip-chip light-emitting diodes with multiple beveled SiC surface and porous ZnO nanoparticle layer coating P Mao, M Xu, J Chen, B Xie, F Song, M Han, G Wang Nanotechnology 26 (18), 185201, 2015 | 16 | 2015 |
Effects of spectral parameters on the light properties of red-green-blue white light-emitting diodes M Xu, H Zhang, Q Zhou, H Wang Applied Optics 55 (16), 4456-4460, 2016 | 14 | 2016 |
Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte L Du, D He, Y Liu, M Xu, Q Wang, Q Xin, A Song IEEE Electron Device Letters 39 (9), 1334-1337, 2018 | 12 | 2018 |
Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer Q Zhou, H Wang, M Xu, XC Zhang Nanomaterials 8 (7), 2018 | 12 | 2018 |
Fabrication of ohmic contact on the carbon-terminated surface of n-type silicon carbide M Xu, X Hu, Y Peng, K Yang, W Xia, G Yu, X Xu Journal of Alloys and Compounds 550, 46-49, 2013 | 12 | 2013 |
Recent advances in Ga-based solar-blind photodetectors M Xu, L Ge, M Han, J Huang, H Xu, Z Yang Chinese Physics B 28 (2), 028502, 2019 | 11 | 2019 |
Progress in research of GaN-based LEDs fabricated on SiC substrate HY Xu, XF Chen, Y Peng, MS Xu, Y Shen, XB Hu, XG Xu Chinese Physics B 24 (6), 7305, 2015 | 10 | 2015 |
Effect of beveled SiC substrate on light extraction of flip-chip light-emitting diodes M Xu, H Xu, Y Shen, X Hu, X Xu IEEE Photonics Technology Letters 26 (10), 1053-1056, 2014 | 9 | 2014 |
Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode L Du, Q Xin, M Xu, Y Liu, G Liang, W Mu, Z Jia, X Wang, G Xin, XT Tao, ... Semiconductor Science and Technology 34 (7), 075001, 2019 | 8 | 2019 |
Improved efficiency of near-ultraviolet LEDs using a novel p-type AlGaN hole injection layer M Xu, Q Zhou, H Zhang, H Wang, X Zhang Superlattices and Microstructures 94, 25-29, 2016 | 8 | 2016 |