Wei Du
Wei Du
Assistant Professor, Department of Electrical Engineering and Physics, Wilkes University
Verified email at wilkes.edu
Title
Cited by
Cited by
Year
An optically pumped 2.5 μm GeSn laser on Si operating at 110 K
S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ...
Applied Physics Letters 109 (17), 171105, 2016
1892016
Direct-bandgap GeSn grown on silicon with 2230nm photoluminescence
SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ...
Applied Physics Letters 105 (15), 151109, 2014
1702014
Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K
J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ...
ACs Photonics 5 (3), 827-833, 2017
1242017
Systematic study of Si-based GeSn photodiodes with 2.6 Ám detector cutoff for short-wave infrared detection
T Pham, W Du, H Tran, J Margetis, J Tolle, G Sun, RA Soref, HA Naseem, ...
Optics express 24 (5), 4519-4531, 2016
1002016
Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates
W Du, Y Zhou, SA Ghetmiri, A Mosleh, BR Conley, A Nazzal, RA Soref, ...
Applied Physics Letters 104 (24), 241110, 2014
872014
Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection
BR Conley, A Mosleh, SA Ghetmiri, W Du, RA Soref, G Sun, J Margetis, ...
Optics express 22 (13), 15639-15652, 2014
862014
Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics
H Tran, W Du, SA Ghetmiri, A Mosleh, G Sun, RA Soref, J Margetis, J Tolle, ...
Journal of Applied Physics 119 (10), 103106, 2016
842016
Growth and characterization of epitaxial Ge1-XSnx alloys and heterostructures using a commercial CVD system
J Margetis, SA Ghetmiri, W Du, BR Conley, A Mosleh, R Soref, G Sun, ...
ECS Transactions 64 (6), 711, 2014
762014
Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx
W Du, SA Ghetmiri, BR Conley, A Mosleh, A Nazzal, RA Soref, G Sun, ...
Applied Physics Letters 105 (5), 051104, 2014
762014
Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff
BR Conley, J Margetis, W Du, H Tran, A Mosleh, SA Ghetmiri, J Tolle, ...
Applied Physics Letters 105 (22), 221117, 2014
712014
Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth
W Dou, M Benamara, A Mosleh, J Margetis, P Grant, Y Zhou, S Al-Kabi, ...
Scientific reports 8 (1), 1-11, 2018
702018
Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications
Y Zhou, W Dou, W Du, T Pham, SA Ghetmiri, S Al-Kabi, A Mosleh, M Alher, ...
Journal of Applied Physics 120 (2), 023102, 2016
642016
Si-based GeSn photodetectors toward mid-infrared imaging applications
H Tran, T Pham, J Margetis, Y Zhou, W Dou, PC Grant, JM Grant, ...
ACS Photonics 6 (11), 2807-2815, 2019
602019
Optically pumped GeSn lasers operating at 270 K with broad waveguide structures on Si
Y Zhou, W Dou, W Du, S Ojo, H Tran, SA Ghetmiri, J Liu, G Sun, R Soref, ...
Acs Photonics 6 (6), 1434-1441, 2019
592019
Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3%
W Dou, Y Zhou, J Margetis, SA Ghetmiri, S Al-Kabi, W Du, J Liu, G Sun, ...
Optics letters 43 (19), 4558-4561, 2018
532018
Si‐based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm
TN Pham, W Du, BR Conley, J Margetis, G Sun, RA Soref, J Tolle, B Li, ...
Electronics letters 51 (11), 854-856, 2015
512015
Electrically injected GeSn lasers on Si operating up to 100 K
Y Zhou, Y Miao, S Ojo, H Tran, G Abernathy, JM Grant, S Amoah, ...
Optica 7 (8), 924-928, 2020
482020
Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
J Margetis, A Mosleh, S Al-Kabi, SA Ghetmiri, W Du, W Dou, M Benamara, ...
Journal of Crystal Growth 463, 128-133, 2017
472017
Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics
SA Ghetmiri, Y Zhou, J Margetis, S Al-Kabi, W Dou, A Mosleh, W Du, ...
Optics letters 42 (3), 387-390, 2017
382017
Shortwave-infrared photoluminescence from Ge1−xSnx thin films on silicon
SA Ghetmiri, W Du, BR Conley, A Mosleh, A Nazzal, G Sun, RA Soref, ...
Journal of Vacuum Science & Technology B, Nanotechnology andá…, 2014
382014
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