Vinod K. Sangwan

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Mark HersamNorthwestern UniversityVerified email at northwestern.edu
Lincoln J LauhonNorthwestern UniversityVerified email at northwestern.edu
Deep JariwalaUniversity of Pennsylvania, Caltech, Northwestern University, Rice UniversityVerified email at seas.upenn.edu
Kan-Sheng ChenNorthwestern UniversityVerified email at northwestern.edu
Hadallia BergeronGraduate Student, Northwestern UniversityVerified email at u.northwestern.edu
Itamar BallaIntel Corp.Verified email at u.northwestern.edu
Spencer WellsResearch Scientist, FacebookVerified email at u.northwestern.edu
Hong-Sub LeeDepartment of Advanced Materials Engineering for Information and Electronics, Kyung Hee UniversityVerified email at khu.ac.kr
Joshua D. WoodPrincipal Solutions Engineer, DynatraceVerified email at dynatrace.com
Vinayak DravidNorthwestern UniversityVerified email at northwestern.edu
Michael J. BedzykProfessor of Materials Science and Engineering, Northwestern UniversityVerified email at northwestern.edu
Joohoon KangSungkyunkwan University (SKKU)Verified email at skku.edu
Michael S. FuhrerSchool of Physics, Monash University; Department of Physics, University of MarylandVerified email at monash.edu
Michael R. WasielewskiProfessor of Chemistry, Northwestern UniversityVerified email at northwestern.edu
George C. SchatzNorthwestern UniversityVerified email at northwestern.edu
Megan E BeckIntel Corporation, Ph.D Northwestern UniversityVerified email at u.northwestern.edu
Emily A. WeissProfessor of Chemistry, Northwestern UniversityVerified email at northwestern.edu
Dean M DeLongchamp or Dean DeLo...NISTVerified email at nist.gov
Subhrangsu MukherjeeNorth Carolina State UniversityVerified email at ncsu.edu
Kevin KohlstedtResearch Associate Professor, Northwestern UniversityVerified email at northwestern.edu

Vinod K. Sangwan

Northwestern University; University of Maryland College Park; Indian Institute of Technology Bombay

Verified email at northwestern.edu - Homepage

Condensed matter physics Neuromorphic computing Quantum materials Energy conversion and storage


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Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides D Jariwala, VK Sangwan, LJ Lauhon, TJ Marks, MC Hersam ACS nano 8 (2), 1102-1120, 2014	2980	2014
Effective passivation of exfoliated black phosphorus transistors against ambient degradation JD Wood, SA Wells, D Jariwala, KS Chen, EK Cho, VK Sangwan, X Liu, ... Nano letters 14 (12), 6964-6970, 2014	1622	2014
Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing D Jariwala, VK Sangwan, LJ Lauhon, TJ Marks, MC Hersam Chemical Society Reviews 42 (7), 2824-2860, 2013	1468	2013
Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide VK Sangwan, HS Lee, H Bergeron, I Balla, ME Beck, KS Chen, ... Nature 554 (7693), 500-504, 2018	911	2018
Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS₂ VK Sangwan, D Jariwala, IS Kim, KS Chen, TJ Marks, LJ Lauhon, ... Nature nanotechnology 10 (5), 403-406, 2015	731	2015
Neuromorphic nanoelectronic materials VK Sangwan, MC Hersam Nature nanotechnology 15 (7), 517-528, 2020	700	2020
Band-like transport in high mobility unencapsulated single-layer MoS2 transistors D Jariwala, VK Sangwan, DJ Late, JE Johns, VP Dravid, TJ Marks, ... Applied Physics Letters 102 (17), 2013	484	2013
Gate-tunable carbon nanotube–MoS2 heterojunction pn diode D Jariwala, VK Sangwan, CC Wu, PL Prabhumirashi, ML Geier, TJ Marks, ... Proceedings of the National Academy of Sciences 110 (45), 18076-18080, 2013	483	2013
Hybrid, Gate-Tunable, van der Waals p–n Heterojunctions from Pentacene and MoS₂ D Jariwala, SL Howell, KS Chen, J Kang, VK Sangwan, SA Filippone, ... Nano letters 16 (1), 497-503, 2016	381	2016
Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS₂ IS Kim, VK Sangwan, D Jariwala, JD Wood, S Park, KS Chen, F Shi, ... ACS nano 8 (10), 10551-10558, 2014	375	2014
Electronic transport in two-dimensional materials VK Sangwan, MC Hersam Annual review of physical chemistry 69 (1), 299-325, 2018	334	2018
Low-Frequency Electronic Noise in Single-Layer MoS₂ Transistors VK Sangwan, HN Arnold, D Jariwala, TJ Marks, LJ Lauhon, MC Hersam Nano letters 13 (9), 4351-4355, 2013	280	2013
Crystallography, morphology, electronic structure, and transport in non-fullerene/non-indacenodithienothiophene polymer: Y6 solar cells W Zhu, AP Spencer, S Mukherjee, JM Alzola, VK Sangwan, ... Journal of the American Chemical Society 142 (34), 14532-14547, 2020	265	2020
Elucidating the Photoresponse of Ultrathin MoS₂ Field-Effect Transistors by Scanning Photocurrent Microscopy CC Wu, D Jariwala, VK Sangwan, TJ Marks, MC Hersam, LJ Lauhon The Journal of Physical Chemistry Letters 4 (15), 2508-2513, 2013	260	2013
Ultrafast Exciton Dissociation and Long-Lived Charge Separation in a Photovoltaic Pentacene–MoS₂ van der Waals Heterojunction S Bettis Homan, VK Sangwan, I Balla, H Bergeron, EA Weiss, MC Hersam Nano letters 17 (1), 164-169, 2017	248	2017
Solution-based processing of monodisperse two-dimensional nanomaterials J Kang, VK Sangwan, JD Wood, MC Hersam Accounts of chemical research 50 (4), 943-951, 2017	237	2017
Bimolecularly passivated interface enables efficient and stable inverted perovskite solar cells C Liu, Y Yang, H Chen, J Xu, A Liu, ASR Bati, H Zhu, L Grater, SS Hadke, ... Science 382 (6672), 810-815, 2023	214	2023
Thermally conductive ultra-low-k dielectric layers based on two-dimensional covalent organic frameworks AM Evans, A Giri, VK Sangwan, S Xun, M Bartnof, CG Torres-Castanedo, ... Nature materials 20 (8), 1142-1148, 2021	213	2021
Fundamental performance limits of carbon nanotube thin-film transistors achieved using hybrid molecular dielectrics VK Sangwan, RP Ortiz, JMP Alaboson, JD Emery, MJ Bedzyk, LJ Lauhon, ... Acs Nano 6 (8), 7480-7488, 2012	187	2012
Investigation of Band-Offsets at Monolayer–Multilayer MoS₂ Junctions by Scanning Photocurrent Microscopy SL Howell, D Jariwala, CC Wu, KS Chen, VK Sangwan, J Kang, TJ Marks, ... Nano letters 15 (4), 2278-2284, 2015	183	2015

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