Dr. P. Prajoon
Dr. P. Prajoon
Jyothi Engineering College, Cheruthuruthy, Kerala, India
Verified email at jecc.ac.in
Title
Cited by
Cited by
Year
Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications
JC Pravin, D Nirmal, P Prajoon, J Ajayan
Physica E: Low-dimensional systems and nanostructures 83, 95-100, 2016
562016
Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications
J Ajayan, D Nirmal, P Prajoon, JC Pravin
AEU-International Journal of Electronics and Communications 79, 151-157, 2017
542017
InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review
J Ajayan, D Nirmal, T Ravichandran, P Mohankumar, P Prajoon, ...
AEU-International Journal of Electronics and Communications 94, 199-214, 2018
362018
The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs
BK Jebalin, AS Rekh, P Prajoon, NM Kumar, D Nirmal
Microelectronics Journal 46 (12), 1387-1391, 2015
322015
Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application
D Nirmal, L Arivazhagan, ASA Fletcher, J Ajayan, P Prajoon
Superlattices and Microstructures 113, 810-820, 2018
302018
Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications
BK Jebalin, AS Rekh, P Prajoon, D Godwinraj, NM Kumar, D Nirmal
Superlattices and Microstructures 78, 210-223, 2015
272015
A new drain current model for a dual metal junctionless transistor for enhanced digital circuit performance
JC Pravin, D Nirmal, P Prajoon, MA Menokey
IEEE Transactions on Electron Devices 63 (9), 3782-3789, 2016
252016
Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications
L Arivazhagan, D Nirmal, D Godfrey, J Ajayan, P Prajoon, ASA Fletcher, ...
AEU-International Journal of Electronics and Communications 108, 189-194, 2019
172019
Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor
JC Pravin, D Nirmal, P Prajoon, NM Kumar, J Ajayan
Superlattices and Microstructures 104, 470-476, 2017
172017
Investigation of breakdown performance in L g = 20 nm novel asymmetric InP HEMTs for future high-speed high-power applications
J Ajayan, T Ravichandran, P Prajoon, JC Pravin, D Nirmal
Journal of Computational Electronics 17 (1), 265-272, 2018
152018
Investigation of DC-RF and breakdown behaviour in Lg= 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications
J Ajayan, T Ravichandran, P Mohankumar, P Prajoon, JC Pravin, ...
AEU-International Journal of Electronics and Communications 84, 387-393, 2018
152018
A modified ABC model in InGaN MQW LED using compositionally step graded Alternating Barrier for efficiency improvement
P Prajoon, D Nirmal, MA Menokey, JC Pravin
Superlattices and Microstructures 96, 155-163, 2016
112016
Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique
V Sandeep, JC Pravin, AR Babu, P Prajoon
IEEE Transactions on Electron Devices 67 (9), 3558-3563, 2020
82020
Nanoscale high-k dielectrics for junctionless nanowire transistor for drain current analysis
JC Pravin, P Prajoon, FP Nesamania, G Srikesh, PS Kumar, D Nirmal
Journal of Electronic Materials 47 (5), 2679-2686, 2018
82018
A review of blue light emitting diodes for future solid state lighting and visible light communication applications
M Manikandan, D Nirmal, J Ajayan, P Mohankumar, P Prajoon, ...
Superlattices and Microstructures 136, 106294, 2019
72019
Temperature-dependent efficiency droop analysis of InGaN MQW light-emitting diode with modified ABC model
P Prajoon, D Nirmal, MA Menokey, JC Pravin
Journal of Computational Electronics 15 (4), 1511-1520, 2016
72016
Efficiency enhancement of InGaN MQW LED using compositionally step graded InGaN barrier on SiC substrate
P Prajoon, D Nirmal, MA Menokey, JC Pravin
Journal of Display Technology 12 (10), 1117-1121, 2016
72016
Investigation of efficiency enhancement in InGaN MQW LED with compositionally step graded GaN/InAlN/GaN multi-layer barrier
P Prajoon, MA Menokey, JC Pravin, J Ajayan, S Rajesh, D Nirmal
Superlattices and Microstructures 116, 71-78, 2018
52018
Investigation of DC and RF performance of novel MOSHEMT on silicon substrate for future submillimetre wave applications
J Ajayan, T Ravichandran, P Mohankumar, P Prajoon, JC Pravin, ...
Semiconductors 52 (16), 1991-1997, 2018
42018
Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor
J Charles Pravin, D Nirmal, P Prajoon, N Mohan Kumar, J Ajayan
Superlattices and Microstructures 104, 470-476, 2017
42017
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Articles 1–20