Nathan F. Gardner
Nathan F. Gardner
Philips Lumileds Lighting, Hewlett-Packard Co., Lumileds Lighting, Apple, Glo
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Auger recombination in InGaN measured by photoluminescence
YC Shen, GO Mueller, S Watanabe, NF Gardner, A Munkholm, ...
Applied Physics Letters 91 (14), 141101, 2007
High-power AlGaInN flip-chip light-emitting diodes
JJ Wierer, DA Steigerwald, MR Krames, JJ O’shea, MJ Ludowise, ...
Applied Physics Letters 78 (22), 3379-3381, 2001
High-power truncated-inverted-pyramid light-emitting diodes exhibiting % external quantum efficiency
MR Krames, M Ochiai-Holcomb, GE Höfler, C Carter-Coman, EI Chen, ...
Applied physics letters 75 (16), 2365-2367, 1999
Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above
NF Gardner, GO Müller, YC Shen, G Chen, S Watanabe, W Götz, ...
Applied Physics Letters 91 (24), 243506, 2007
InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
JJ Wierer, MR Krames, JE Epler, NF Gardner, MG Craford, JR Wendt, ...
Applied Physics Letters 84 (19), 3885-3887, 2004
Carrier distribution in multiple quantum well light-emitting diodes
A David, MJ Grundmann, JF Kaeding, NF Gardner, TG Mihopoulos, ...
Applied Physics Letters 92 (5), 053502, 2008
High power LEDs–Technology status and market applications
FM Steranka, J Bhat, D Collins, L Cook, MG Craford, R Fletcher, ...
physica status solidi (a) 194 (2), 380-388, 2002
Polarization anisotropy in the electroluminescence of -plane multiple-quantum-well light-emitting diodes
NF Gardner, JC Kim, JJ Wierer, YC Shen, MR Krames
Applied Physics Letters 86 (11), 111101, 2005
Indium gallium nitride smoothing structures for III-nitride devices
WK Goetz, MD Camras, NF Gardner, RS Kern, AY Kim, SA Stockman
US Patent 6,635,904, 2003
Indium gallium nitride smoothing structures for III-nitride devices
WK Goetz, MD Camras, NF Gardner, RS Kern, AY Kim, SA Stockman
US Patent 6,489,636, 2002
Semiconductor light emitting devices
NF Gardner, JJ Wierer Jr, GO Mueller, MR Krames
US Patent 6,847,057, 2005
Performance of high‐power AlInGaN light emitting diodes
AY Kim, W Götz, DA Steigerwald, JJ Wierer, NF Gardner, J Sun, ...
Physica status solidi (a) 188 (1), 15-21, 2001
Substrate for growing a III-V light emitting device
MR Krames, NF Gardner, JE Epler
US Patent 8,334,155, 2012
Semiconductor light emitting devices including in-plane light emitting layers
JC Kim, JE Epler, NF Gardner, MR Krames, JJ Wierer Jr
US Patent 7,808,011, 2010
High‐Power III‐Nitride Emitters for Solid‐State Lighting
MR Krames, J Bhat, D Collins, NF Gardner, W Götz, CH Lowery, ...
physica status solidi (a) 192 (2), 237-245, 2002
Significant strain dependence of piezoelectric constants in In x Ga 1− x N/G a N quantum wells
G Vaschenko, D Patel, CS Menoni, NF Gardner, J Sun, W Götz, CN Tomé, ...
Physical Review B 64 (24), 241308, 2001
Local indium segregation and bang gap variations in high efficiency green light emitting InGaN/GaN diodes
JR Jinschek, R Erni, NF Gardner, AY Kim, C Kisielowski
Solid State Communications 137 (4), 230-234, 2006
1.4× efficiency improvement in transparent-substrate P light-emitting diodes with thin Å) active regions
NF Gardner, HC Chui, EI Chen, MR Krames, JW Huang, FA Kish, ...
Applied physics letters 74 (15), 2230-2232, 1999
Droop in III-nitrides: Comparison of bulk and injection contributions
A David, NF Gardner
Applied Physics Letters 97 (19), 193508, 2010
III-Nitride light emitting devices with low driving voltage
W Goetz, NF Gardner, RS Kern, AY Kim, A Munkholm, SA Stockman, ...
US Patent 6,630,692, 2003
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