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Wei Sun
Wei Sun
II-VI Incorporated
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Title
Cited by
Cited by
Year
InGaN/Dilute-As GaNAs interface quantum well for red emitters
CK Tan, D Borovac, W Sun, N Tansu
Scientific reports 6 (1), 1-6, 2016
352016
Narrow-linewidth red-emission Eu3+-doped TiO2 spheres for light-emitting diodes
P Zhu, H Zhu, W Qin, BH Dantas, W Sun, CK Tan, N Tansu
Journal of Applied Physics 119 (12), 124305, 2016
332016
Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers
SA Al Muyeed, W Sun, X Wei, R Song, DD Koleske, N Tansu, JJ Wierer Jr
AIP Advances 7 (10), 105312, 2017
322017
Large optical gain AlInN-delta-GaN quantum well for deep ultraviolet emitters
CK Tan, W Sun, D Borovac, N Tansu
Scientific reports 6 (1), 1-7, 2016
312016
III-Nitride digital alloy: electronics and optoelectronics properties of the InN/GaN ultra-short period superlattice nanostructures
W Sun, CK Tan, N Tansu
Scientific reports 7 (1), 1-8, 2017
292017
AlN/GaN Digital alloy for mid-and deep-ultraviolet optoelectronics
W Sun, CK Tan, N Tansu
Scientific Reports 7 (1), 1-8, 2017
282017
Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission
W Sun, SA Al Muyeed, R Song, JJ Wierer Jr, N Tansu
Applied Physics Letters 112 (20), 201106, 2018
272018
First-Principle Electronic Properties of Dilute-P GaN1− xPx Alloy for Visible Light Emitters
CK Tan, D Borovac, W Sun, N Tansu
Scientific Reports 6 (1), 1-9, 2016
192016
Effect of interface roughness on Auger recombination in semiconductor quantum wells
CK Tan, W Sun, JJ Wierer Jr, N Tansu
AIP Advances 7 (3), 035212, 2017
162017
Aspect ratio engineering of microlens arrays in thin-film flip-chip light-emitting diodes
P Zhu, CK Tan, W Sun, N Tansu
Applied optics 54 (34), 10299-10303, 2015
132015
Crystal orientation dependence of gallium nitride wear
G Zeng, W Sun, R Song, N Tansu, BA Krick
Scientific Reports 7 (1), 1-6, 2017
122017
Ultra-broadband optical gain in III-nitride digital alloys
W Sun, CK Tan, JJ Wierer, N Tansu
Scientific Reports 8 (1), 1-7, 2018
112018
Hybrid Integration of n-MoS2/p-GaN Diodes by Quasi-van der Waals Epitaxy
C Liu, H Huang, W Choi, J Kim, K Jung, W Sun, N Tansu, W Zhou, H Kuo, ...
ACS Applied Electronic Materials 2 (2), 419-425, 2020
92020
Dilute-As AlNAs alloy for deep-ultraviolet emitter
CK Tan, D Borovac, W Sun, N Tansu
Scientific Reports 6 (1), 1-7, 2016
92016
Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers
SA Al Muyeed, W Sun, MR Peart, RM Lentz, X Wei, D Borovac, R Song, ...
Journal of Applied Physics 126 (21), 213106, 2019
72019
Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices
MR Peart, X Wei, D Borovac, W Sun, N Tansu, JJ Wierer Jr
ACS Applied Electronic Materials 1 (8), 1367-1371, 2019
72019
Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching
X Wei, SA Al Muyeed, MR Peart, W Sun, N Tansu, JJ Wierer Jr
Applied Physics Letters 113 (12), 121106, 2018
72018
On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE
D Borovac, W Sun, R Song, JJ Wierer Jr, N Tansu
Journal of Crystal Growth 533, 125469, 2020
52020
Gain characteristics of InGaN quantum wells with AlGaInN barriers
H Fu, W Sun, O Ogidi-Ekoko, JC Goodrich, N Tansu
AIP Advances 9 (4), 045013, 2019
52019
Interplay of GaAsP barrier and strain compensation in InGaAs quantum well at near-critical thickness
W Sun, H Kim, LJ Mawst, N Tansu
Journal of Crystal Growth 531, 125381, 2020
42020
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Articles 1–20