Cory Carl Bomberger
Cory Carl Bomberger
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Cited by
Enhanced room temperature electronic and thermoelectric properties of the dilute bismuthide InGaBiAs
P Dongmo, Y Zhong, P Attia, C Bomberger, R Cheaito, JF Ihlefeld, ...
Journal of Applied Physics 112 (9), 093710, 2012
Single-material semiconductor hyperbolic metamaterials
D Wei, C Harris, CC Bomberger, J Zhang, J Zide, S Law
Optics express 24 (8), 8735-8745, 2016
Experimental studies of thermoelectric power generation in dynamic temperature environments
PM Attia, MR Lewis, CC Bomberger, AK Prasad, JMO Zide
Energy, 2013
Charge carrier relaxation processes in TbAs nanoinclusions in GaAs measured by optical-pump THz-probe transient absorption spectroscopy
LR Vanderhoef, AK Azad, CC Bomberger, DR Chowdhury, DB Chase, ...
Physical Review B 89 (4), 045418, 2014
Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors
CC Bomberger, MR Lewis, LR Vanderhoef, MF Doty, JMO Zide
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
Cross-plane thermoelectric transport in p-type La0.67Sr0.33MnO3/LaMnO3 oxide metal/semiconductor superlattices
P Jha, TD Sands, P Jackson, C Bomberger, T Favaloro, S Hodson, J Zide, ...
Journal of Applied Physics 113 (19), 193702, 2013
Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0.53Ga0.47As
AG Lind, HL Aldridge Jr, CC Bomberger, C Hatem, JMO Zide, KS Jones
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2015
Modeling passive power generation in a temporally-varying temperature environment via thermoelectrics
CC Bomberger, PM Attia, AK Prasad, JMO Zide
Applied thermal engineering 56 (1-2), 152-158, 2013
N-type doping strategies for InGaAs
H Aldridge Jr, AG Lind, CC Bomberger, Y Puzyrev, JMO Zide, ...
Materials Science in Semiconductor Processing 62, 171-179, 2017
Growth and characterization of TbAs films
CC Bomberger, BE Tew, MR Lewis, JMO Zide
Applied Physics Letters 109 (20), 202104, 2016
Determining the band alignment of TbAs:GaAs and TbAs:In0.53Ga0.47As
CC Bomberger, LR Vanderhoef, A Rahman, D Shah, DB Chase, ...
Applied Physics Letters 107 (10), 102103, 2015
Growth and characterization of ErAs:GaBix
CC Bomberger, J Nieto-Pescador, MR Lewis, BE Tew, Y Wang, ...
Applied Physics Letters 109 (17), 172103, 2016
Observation of Self‐Assembled Core–Shell Structures in Epitaxially Embedded TbErAs Nanoparticles
P Dongmo, M Hartshorne, T Cristiani, ML Jablonski, C Bomberger, ...
small 10 (23), 4920-4925, 2014
Silicon nanowire growth on poly‐silicon‐on‐quartz substrates formed by aluminum‐induced crystallization
C Kendrick, C Bomberger, N Dawley, J Georgiev, H Shen, JM Redwing
Crystal Research and Technology 48 (9), 658-665, 2013
Implantation and Diffusion of Silicon Marker Layers in In 0.53 Ga 0.47 As
H Aldridge, AG Lind, CC Bomberger, Y Puzyrev, C Hatem, RM Gwilliam, ...
Journal of Electronic Materials 45 (8), 4282-4287, 2016
Fermi-Level Effects on Extended Defect Evolution in Si+ and P+ Implanted In0. 53Ga0. 47As
AG Lind, HL Aldridge Jr, CC Bomberger, C Hatem, JMO Zide, KS Jones
ECS Journal of Solid State Science and Technology 5 (4), P3073, 2015
High Thermoelectric Power Factor and ZT in TbAs: InGaAs Epitaxial Nanocomposite Material
BE Tew, P Vempati, LE Clinger, CC Bomberger, NI Halaszynski, ...
Advanced Electronic Materials 5 (4), 1900015, 2019
Annealing Effects on the Electrical Activation of Si Dopants in InGaAs
AG Lind, HL Aldridge, CC Bomberger, C Hatem, JMO Zide, KS Jones
ECS Transactions 66 (7), 23, 2015
Germanium-rich nanowire transistor with relaxed buffer layer
G Glass, A Murthy, C Bomberger, T Ghani, J Kavalieros, S Chouksey, ...
US Patent App. 16/131,520, 2020
Asymmetrical semiconductor nanowire field-effect transistor
SH Sung, D Basu, A Agrawal, B Chu-Kung, S Chouksey, CC Bomberger, ...
US Patent App. 15/942,252, 2019
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Articles 1–20