Geoffrey Tse
Geoffrey Tse
Yunnan Normal University
Verified email at ynnu.edu.cn
Title
Cited by
Cited by
Year
Second-order piezoelectricity in wurtzite III-N semiconductors
J Pal, G Tse, V Haxha, MA Migliorato, S Tomić
Physical Review B 84 (8), 085211, 2011
1092011
Tunable band gap in germanene by surface adsorption
M Ye, R Quhe, J Zheng, Z Ni, Y Wang, Y Yuan, G Tse, J Shi, Z Gao, J Lu
Physica E: Low-dimensional Systems and Nanostructures 59, 60-65, 2014
692014
Graphene/GaN diodes for ultraviolet and visible photodetectors
Fang Lin, Shao-Wen Chen, Jie Meng, Geoffrey Tse, Xue-Wen Fu, Fu-Jun Xu, Bo ...
Applied Physics Letter 105 (7), 073103, 2014
682014
Piezoelectric field enhancement in III–V core–shell nanowires
HYS Al-Zahrani, J Pal, MA Migliorato, G Tse, D Yu
Nano Energy 14, 382-391, 2015
512015
Non-linear piezoelectricity in zinc blende GaAs and InAs semiconductors
G Tse, J Pal, U Monteverde, R Garg, V Haxha, MA Migliorato, S Tomić
Journal of Applied Physics 114 (7), 073515, 2013
342013
Non Linear Piezoelectricity in ZincBlende GaAs and InAs Semiconductors
G. Tse, J. Pal, R. Garg, V. Haxha, M.A. Migliorato
Numerical Simulation of Optoelectronic Devices (NUSOD), 2012 12th …, 2012
34*2012
A review of non linear piezoelectricity in semiconductors
M Migliorato, J Pal, R Garg, G Tse, HYS Al-Zahrani, U Monteverde, ...
AIP Conference Proceeding 1590 (1), 32-41, 2014
252014
Importance of non linear piezoelectric effect in Wurtzite III-N semiconductors
J Pal, G Tse, V Haxha, MA Migliorato, S Tomić
Optical and Quantum Electronics 44 (3), 195-203, 2012
242012
The first principle study: electronic and optical properties in Bi 2 Se 3
G Tse, D Yu
Computational Condensed Matter 4, 59-63, 2015
222015
The first principle study of electronic and optical properties in Rhombohedral BiAlO3
G Tse, D Yu
Modern Physics Letters B 30 (3), 1650006, 2016
92016
The electronic and structural properties in Ca2TiMnO6 double perovskite: The first principle study
G Tse, D Yu
Computational Condense Matter 9, 33-39, 2016
82016
The bandgap distribution investigated across the strain-induced bending ZnO nanowire
G Tse, D Yu
Modern Physics Letters B 30 (5), 1650048, 2016
62016
The structural, electronic, optical and elastic properties of ε-type gallium selenide: a first principle study
G Tse, D Yu
Journal of Nanoelectronics and Optoelectronics 11 (5), 561-567, 2016
32016
First principle study optical properties of CH3NH3PbI3 and CH3NH3SnI3 for perovskite photovoltaics
G Tse, D Yu
Asian Journal of Current Engineering and Maths 4 (5), 49-55, 2015
32015
Strain dependence of internal displacement and effective charge in wurtzite III-N semiconductors
J Pal, G Tse, V Haxha, MA Migliorato, S Tomić
Journal of Physics: Conference Series 367 (1), 012006, 2012
32012
The First Principle Study: Structural, Electronic, Optical, Phonon and Elastic Properties in Bulk and Monolayer Molybdenum Ditelluride
G. Tse, D. Yu
Journal of Nanoelectronics and Optoelectronics 12 (2), 89-99, 2017
22017
The first principle study electronic and optical properties in BiGaO3
G Tse, D Yu
Asian Journal of Current Engineering and Maths 4 (5), 56-61, 2015
22015
The optical and elastic properties of strained ZnO by first principle calculations
G Tse
Computational Condensed Matter, 0
2*
Study of Piezoelectricity on III/V semiconductors from atomistic simulations to computer modelling
G Tse
PQDT-UK & Ireland, 2012
12012
Electronic, optical, elastic, mechanical and vibrational properties of hexagonal h-ZnS with density functional theory
G Tse
Computational Condensed Matter, e00572, 2021
2021
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Articles 1–20