| Gate length scaling beyond Si: mono-layer 2D channel FETs robust to short channel effects CJ Dorow, A Penumatcha, A Kitamura, C Rogan, KP O’Brien, S Lee, ... 2022 International Electron Devices Meeting (IEDM), 7.5. 1-7.5. 4, 2022 | 11 | 2022 |
| 300 mm MOCVD 2D CMOS materials for more (than) Moore scaling K Maxey, CH Naylor, KP O'Brien, A Penumatcha, A Oni, C Mokhtarzadeh, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 10 | 2022 |
| Gallium nitride (GaN) on silicon substrates for LEDs M Kane, N Arefin Nitride Semiconductor Light-Emitting Diodes (LEDs), 1st Edition Materials …, 2014 | 8 | 2014 |
| 2D materials in the BEOL CH Naylor, K Maxey, C Jezewski, KP O’Brien, AV Penumatcha, MS Kavrik, ... 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 4 | 2023 |
| DrGaN: an Integrated CMOS Driver-GaN Power Switch Technology on 300mm GaN-on-Si with E-mode GaN MOSHEMT and 3D Monolithic Si PMOS HW Then, M Radosavljevic, S Bader, A Zubair, H Vora, N Nair, P Koirala, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 2 | 2023 |
| GaN growth on silicon based substrates using pulsed electron beam deposition (PED) process N Arefin, MH Kane, PR Larson, VR Whiteside, K Hossain, BN Pritchett, ... MRS Online Proceedings Library 1736, 95-100, 2014 | 1 | 2014 |
| High Mobility TMD NMOS and PMOS Transistors and GAA Architecture for Ultimate CMOS Scaling A Penumatcha, KP O’Brien, K Maxey, W Mortelmans, R Steinhardt, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
| Exploring manufacturability of novel 2D channel materials: 300 mm wafer-scale 2D NMOS & PMOS using MoS2, WS2, & WSe2 CJ Dorow, T Schram, Q Smets, KP O’Brien, K Maxey, CC Lin, L Panarella, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
| 1Texas A & M University at Galveston, Galveston, TX, United States; 2University of Oklahoma, Norman, OK, United States MH Kane, N Arefin Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies …, 2017 | | 2017 |
| Growth of wide bandgap semiconductors using pulsed electron beam deposition (ped) process N Arefin | | 2015 |
| Revised Physical Alpha-Power Law Model for Ultrathin Oxide MOSFETs N Arefin, F Ahmed, MR Rahman, QDM Khosru 2006 International Conference on Electrical and Computer Engineering, 514-517, 2006 | | 2006 |
Matthew KaneAssociate Professor of Marine Engineering and Technology, Texas A&M University (Galveston Campus)Verified email at tamug.edu
