| Thermal oxidation rates and resulting optical constants of Al0. 83In0. 17N films grown on GaN E Palmese, MR Peart, D Borovac, R Song, N Tansu, JJ Wierer Journal of Applied Physics 129 (12), 2021 | 5 | 2021 |
| Recombination Rate Analysis of InGaN-Based Red-Emitting Light-Emitting Diodes H Xue, SA Al Muyeed, E Palmese, D Rogers, R Song, N Tansu, JJ Wierer IEEE Journal of Quantum Electronics 59 (2), 1-9, 2023 | 3 | 2023 |
| Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates X Wei, SA Al Muyeed, H Xue, E Palmese, R Song, N Tansu, JJ Wierer Photonics Research 10 (1), 33-40, 2022 | 3 | 2022 |
| Thermal oxidation of lattice mismatched Al1-xInxN films on GaN E Palmese, H Xue, R Song, JJ Wierer Jr e-Prime-Advances in Electrical Engineering, Electronics and Energy 5, 100208, 2023 | 2 | 2023 |
| Structural and optical characterization of thin AlInN films on c-plane GaN substrates H Xue, E Palmese, R Song, MI Chowdhury, NC Strandwitz, JJ Wierer Journal of Applied Physics 134 (7), 2023 | 1 | 2023 |
| Growth and characterization of AlInN/GaN superlattices H Xue, E Palmese, BJ Sekely, BD Little, FA Kish, JF Muth, JJ Wierer Journal of Crystal Growth 630, 127567, 2024 | | 2024 |
| Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates E Palmese, H Xue, S Pavlidis, JJ Wierer IEEE Transactions on Electron Devices, 2023 | | 2023 |
