| Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces I Krylov, L Kornblum, A Gavrilov, D Ritter, M Eizenberg Applied Physics Letters 100 (17), 2012 | 56 | 2012 |
| The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks I Krylov, D Ritter, M Eizenberg Journal of Applied Physics 117 (17), 2015 | 45 | 2015 |
| Indium outdiffusion and leakage degradation in metal/Al2O3/In0. 53Ga0. 47As capacitors I Krylov, A Gavrilov, M Eizenberg, D Ritter Applied Physics Letters 103 (5), 2013 | 33 | 2013 |
| Correlation between Ga-O signature and midgap states at the Al2O3/In0. 53Ga0. 47As interface I Krylov, A Gavrilov, M Eizenberg, D Ritter Applied Physics Letters 101 (6), 2012 | 33 | 2012 |
| Indium out-diffusion in Al2O3/InGaAs stacks during anneal at different ambient conditions I Krylov, R Winter, D Ritter, M Eizenberg Applied Physics Letters 104 (24), 2014 | 28 | 2014 |
| Ferroelectricity of as-deposited HZO fabricated by plasma-enhanced atomic layer deposition at 300° C by inserting TiO2 interlayers Y Qi, X Xu, I Krylov, M Eizenberg Applied Physics Letters 118 (3), 2021 | 24 | 2021 |
| Obtaining low resistivity (∼ 100 μΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor I Krylov, E Zoubenko, K Weinfeld, Y Kauffmann, X Xu, D Ritter, ... Journal of Vacuum Science & Technology A 36 (5), 2018 | 24 | 2018 |
| Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition I Krylov, X Xu, Y Qi, K Weinfeld, V Korchnoy, M Eizenberg, D Ritter Journal of Vacuum Science & Technology A 37 (6), 2019 | 19 | 2019 |
| Role of reactive gas on the structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition I Krylov, X Xu, E Zoubenko, K Weinfeld, S Boyeras, F Palumbo, ... Journal of Vacuum Science & Technology A 36 (6), 2018 | 16 | 2018 |
| The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stack R Winter, I Krylov, J Ahn, PC McIntyre, M Eizenberg Applied Physics Letters 104 (20), 2014 | 16 | 2014 |
| A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors I Krylov, B Pokroy, M Eizenberg, D Ritter Journal of Applied Physics 120 (12), 2016 | 15 | 2016 |
| Understanding leakage currents through Al2O3 on SrTiO3 D Miron, I Krylov, M Baskin, E Yalon, L Kornblum Journal of Applied Physics 126 (18), 2019 | 14 | 2019 |
| Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources I Krylov, X Xu, K Weinfeld, V Korchnoy, D Ritter, M Eizenberg Journal of Vacuum Science & Technology A 37 (1), 2019 | 14 | 2019 |
| A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs I Krylov, B Pokroy, D Ritter, M Eizenberg Journal of Applied Physics 119 (8), 2016 | 13 | 2016 |
| The role of the substrate on the dispersion in accumulation in III-V compound semiconductor based metal-oxide-semiconductor gate stacks I Krylov, D Ritter, M Eizenberg Applied Physics Letters 107 (10), 2015 | 13 | 2015 |
| Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study SM Pazos, S Boyeras Baldomá, FL Aguirre, I Krylov, M Eizenberg, ... Journal of Applied Physics 127 (17), 2020 | 12 | 2020 |
| HfxAlyO ternary dielectrics for InGaAs based metal-oxide-semiconductor capacitors I Krylov, D Ritter, M Eizenberg Journal of Applied Physics 122 (3), 2017 | 12 | 2017 |
| Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing R Winter, I Krylov, C Cytermann, K Tang, J Ahn, PC McIntyre, M Eizenberg Journal of Applied Physics 118 (5), 2015 | 12 | 2015 |
| Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition I Krylov, Y Qi, V Korchnoy, K Weinfeld, M Eizenberg, E Yalon Journal of Vacuum Science & Technology A 38 (3), 2020 | 11 | 2020 |
| Elimination of the weak inversion hump in Si3N4/InGaAs (001) gate stacks using an in situ NH3 pre-treatment I Krylov, A Gavrilov, D Ritter, M Eizenberg Applied Physics Letters 99 (20), 2011 | 11 | 2011 |
Moshe EizenbergTechnion and Guangdong Technion- Israel Institute of Technologyכתובת אימייל מאומתת בדומיין technion.ac.il
