| 29.5-percent-efficient GaInP/GaAs tandem solar cells KA Bertness, SR Kurtz, DJ Friedman, AE Kibbler, C Kramer, JM Olson Applied Physics Letters 65 (8), 989-991, 1994 | 438 | 1994 |
| 29.5-PERCENT-EFFICIENT GALNP/GAAS TANDEM SOLAR-CELLS KA BERTNESS, SR KURTZ, DJ FRIEDMAN, AE KIBBLER, C KRAMER, ... Applied Physics Letters 65 (8), 989-991, 1994 | 438 | 1994 |
| Spectral dependence of the change in refractive-index due to carrier injection in GaAs lasers CH Henry, RA Logan, KA Bertness Journal of Applied Physics 52 (7), 4457-4461, 1981 | 415 | 1981 |
| Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy KA Bertness, A Roshko, LM Mansfield, TE Harvey, NA Sanford Journal of Crystal Growth 310 (13), 3154-3158, 2008 | 210 | 2008 |
| Spontaneously grown GaN and AlGaN nanowires KA Bertness, A Roshko, NA Sanford, JM Barker, AV Davydov Journal of Crystal Growth 287 (2), 522-527, 2006 | 199 | 2006 |
| External radiative quantum efficiency of 96% from a GaAs/GaInP heterostructure H Gauck, TH Gfroerer, MJ Renn, EA Cornell, KA Bertness Applied Physics A 64 (2), 143-7, 1997 | 174 | 1997 |
| High-Q GaN nanowire resonators and oscillators SM Tanner, JM Gray, CT Rogers, KA Bertness, NA Sanford Applied Physics Letters 91 (20), 2007 | 156 | 2007 |
| GaN nanowires grown by molecular beam epitaxy KA Bertness, NA Sanford, AV Davydov IEEE Journal of selected topics in quantum electronics 17 (4), 847-858, 2010 | 155 | 2010 |
| Catalyst-free growth of GaN nanowires KA Bertness, NA Sanford, JM Barker, JB Schlager, A Roshko, ... Journal of electronic materials 35, 576-580, 2006 | 149 | 2006 |
| Nucleation conditions for catalyst-free GaN nanowires KA Bertness, A Roshko, LM Mansfield, TE Harvey, NA Sanford Journal of crystal growth 300 (1), 94-99, 2007 | 148 | 2007 |
| Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy JB Schlager, KA Bertness, PT Blanchard, LH Robins, A Roshko, ... Journal of applied physics 103 (12), 2008 | 145 | 2008 |
| Growth of the room temperature Au/Si(111)-(7 X 7) interface JJ Yeh, J Hwang, KA Bertness, DJ Friedman, R Cao, I Lindau Physical Review Letters 70 (24), 3768, 1993 | 143 | 1993 |
| Controlled nucleation of GaN nanowires grown with molecular beam epitaxy KA Bertness, AW Sanders, DM Rourke, TE Harvey, A Roshko, ... Advanced functional materials 20 (17), 2911-2915, 2010 | 131 | 2010 |
| Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy NA Sanford, PT Blanchard, KA Bertness, L Mansfield, JB Schlager, ... Journal of Applied Physics 107 (3), 2010 | 128 | 2010 |
| Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy MD Brubaker, I Levin, AV Davydov, DM Rourke, NA Sanford, VM Bright, ... Journal of Applied Physics 110 (5), 2011 | 104 | 2011 |
| Highly selective GaN-nanowire/TiO2-nanocluster hybrid sensors for detection of benzene and related environment pollutants GS Aluri, A Motayed, AV Davydov, VP Oleshko, KA Bertness, NA Sanford, ... Nanotechnology 22 (29), 295503, 2011 | 103 | 2011 |
| On-chip optical interconnects made with gallium nitride nanowires MD Brubaker, PT Blanchard, JB Schlager, AW Sanders, A Roshko, ... Nano letters 13 (2), 374-377, 2013 | 98 | 2013 |
| EBSD measurement of strains in GaAs due to oxidation of buried AlGaAs layers RR Keller, A Roshko, RH Geiss, KA Bertness, TP Quinn Microelectronic engineering 75 (1), 96-102, 2004 | 94 | 2004 |
| Characterizing atomic composition and dopant distribution in wide band gap semiconductor nanowires using laser-assisted atom probe tomography R Agrawal, RA Bernal, D Isheim, HD Espinosa The Journal of Physical Chemistry C 115 (36), 17688-17694, 2011 | 92 | 2011 |
| Atom probe tomography evaporation behavior of C-axis GaN nanowires: Crystallographic, stoichiometric, and detection efficiency aspects DR Diercks, BP Gorman, R Kirchhofer, N Sanford, K Bertness, M Brubaker Journal of Applied Physics 114 (18), 2013 | 89 | 2013 |
Norman SanfordNISTVerified email at boulder.nist.gov
