Ben Murdin
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Auger recombination dynamics of lead salts under picosecond free-electron-laser excitation
PC Findlay, CR Pidgeon, R Kotitschke, A Hollingworth, BN Murdin, ...
Physical Review B 58 (19), 12908, 1998
Direct observation of the LO phonon bottleneck in wide GaAs/ As quantum wells
BN Murdin, W Heiss, C Langerak, SC Lee, I Galbraith, G Strasser, ...
Physical Review B 55 (8), 5171, 1997
Coherent control of Rydberg states in silicon
PT Greenland, SA Lynch, AFG Van der Meer, BN Murdin, CR Pidgeon, ...
Nature 465 (7301), 1057-1061, 2010
Silicon as a model ion trap: Time domain measurements of donor Rydberg states
NQ Vinh, PT Greenland, K Litvinenko, B Redlich, AFG Van Der Meer, ...
Proceedings of the National Academy of Sciences 105 (31), 10649-10653, 2008
InSb1− xNx growth and devices
T Ashley, TM Burke, GJ Pryce, AR Adams, A Andreev, BN Murdin, ...
Solid-State Electronics 47 (3), 387-394, 2003
Auger recombination in long-wavelength infrared alloys
BN Murdin, M Kamal-Saadi, A Lindsay, EP O’Reilly, AR Adams, GJ Nott, ...
Applied Physics Letters 78 (11), 1568-1570, 2001
Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures
W Weber, LE Golub, SN Danilov, J Karch, C Reitmaier, B Wittmann, ...
Physical Review B 77 (24), 245304, 2008
Direct observation of magnetophonon resonances in Landau-level lifetimes of a semiconductor heterostructure
TA Vaughan, RJ Nicholas, C Langerak, BN Murdin, CR Pidgeon, ...
Physical Review B 53 (24), 16481, 1996
Band gap reduction in GaNSb alloys due to the anion mismatch
TD Veal, LFJ Piper, S Jollands, BR Bennett, PH Jefferson, PA Thomas, ...
Applied Physics Letters 87 (13), 132101, 2005
Spin-galvanic effect due to optical spin orientation in n-type GaAs quantum well structures
SD Ganichev, P Schneider, VV Bel’kov, EL Ivchenko, SA Tarasenko, ...
Physical Review B 68 (8), 081302, 2003
Band anticrossing in dilute
BN Murdin, AR Adams, P Murzyn, CR Pidgeon, IV Bradley, JPR Wells, ...
Applied physics letters 81 (2), 256-258, 2002
Suppression of Auger recombination in arsenic‐rich InAs1−xSbx strained layer superlattices
CM Ciesla, BN Murdin, CR Pidgeon, RA Stradling, CC Phillips, ...
Journal of Applied Physics 80 (5), 2994-2997, 1996
Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys
TD Veal, LFJ Piper, PH Jefferson, I Mahboob, CF McConville, M Merrick, ...
Applied Physics Letters 87 (18), 182114, 2005
Band anticrossing in
PH Jefferson, TD Veal, LFJ Piper, BR Bennett, CF McConville, BN Murdin, ...
Applied physics letters 89 (11), 111921, 2006
Si: P as a laboratory analogue for hydrogen on high magnetic field white dwarf stars
BN Murdin, J Li, MLY Pang, ET Bowyer, KL Litvinenko, SK Clowes, ...
Nature communications 4 (1), 1-8, 2013
Excitonic signatures in the photoluminescence and terahertz absorption of a multiple quantum well
I Galbraith, R Chari, S Pellegrini, PJ Phillips, CJ Dent, AFG Van Der Meer, ...
Physical Review B 71 (7), 073302, 2005
Suppression of non-radiative processes in semiconductor mid-infrared emitters and detectors
CR Pidgeon, CM Ciesla, BN Murdin
Progress in quantum electronics 21 (5), 361-419, 1997
Temperature dependence of the electron Landé factor in InSb and GaAs
KL Litvinenko, L Nikzad, CR Pidgeon, J Allam, LF Cohen, T Ashley, ...
Physical Review B 77 (3), 033204, 2008
Excite-probe determination of the intersubband lifetime in wide GaAs/AlGaAs quantum wells using a far-infrared free-electron laser
BN Murdin, GMH Knippels, AFG Van der Meer, CR Pidgeon, C Langerak, ...
Semiconductor science and technology 9 (8), 1554, 1994
Recombination processes in midinfrared InGaAsSb diode lasers emitting at
K O’Brien, SJ Sweeney, AR Adams, BN Murdin, A Salhi, Y Rouillard, ...
Applied physics letters 89 (5), 051104, 2006
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