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You Yin
You Yin
Professor of Division of Electronics and Informatics, Gunma University
Verified email at gunma-u.ac.jp - Homepage
Title
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Cited by
Year
Associative memory realized by a reconfigurable memristive Hopfield neural network
SG Hu, Y Liu, Z Liu, TP Chen, JJ Wang, Q Yu, LJ Deng, Y Yin, S Hosaka
Nature communications 6 (1), 1-8, 2015
2012015
Characterization of nitrogen-doped films and their application to phase-change memory
Y Yin, H Sone, S Hosaka
Journal of Applied Physics 102 (6), 064503, 2007
1012007
Emulating the paired-pulse facilitation of a biological synapse with a NiOx-based memristor
SG Hu, Y Liu, TP Chen, Z Liu, Q Yu, LJ Deng, Y Yin, S Hosaka
Applied Physics Letters 102 (18), 183510, 2013
852013
Emulating the Ebbinghaus forgetting curve of the human brain with a NiO-based memristor
SG Hu, Y Liu, TP Chen, Z Liu, Q Yu, LJ Deng, Y Yin, S Hosaka
Applied Physics Letters 103 (13), 133701, 2013
812013
Self-assembled incorporation of modulated block copolymer nanostructures in phase-change memory for switching power reduction
WI Park, BK You, BH Mun, HK Seo, JY Lee, S Hosaka, Y Yin, CA Ross, ...
Acs Nano 7 (3), 2651-2658, 2013
792013
Flexible one diode-one phase change memory array enabled by block copolymer self-assembly
BH Mun, BK You, SR Yang, HG Yoo, JM Kim, WI Park, Y Yin, M Byun, ...
ACS nano 9 (4), 4120-4128, 2015
692015
Simulation of proposed confined-chalcogenide phase-change random access memory for low reset current by finite element modelling
Y Yin, H Sone, S Hosaka
Japanese journal of applied physics 45 (8R), 6177, 2006
642006
Synaptic long-term potentiation realized in Pavlov's dog model based on a NiOx-based memristor
SG Hu, Y Liu, Z Liu, TP Chen, Q Yu, LJ Deng, Y Yin, S Hosaka
Journal of Applied Physics 116 (21), 214502, 2014
492014
Lateral SbTeN based multi-layer phase change memory for multi-state storage
Y Yin, H Sone, S Hosaka
Microelectronic Engineering 84 (12), 2901-2906, 2007
482007
Finite element analysis of dependence of programming characteristics of phase-change memory on material properties of chalcogenides
Y Yin, H Sone, S Hosaka
Japanese journal of applied physics 45 (11R), 8600, 2006
462006
A novel lateral phase-change random access memory characterized by ultra low reset current and power consumption
Y Yin, A Miyachi, D Niida, H Sone, S Hosaka
Japanese journal of applied physics 45 (7L), L726, 2006
442006
Dependences of electrical properties of thin GeSbTe and AgInSbTe films on annealing
Y Yin, H Sone, S Hosaka
Japanese journal of applied physics 44 (8R), 6208, 2005
442005
Predicting house price with a memristor-based artificial neural network
JJ Wang, SG Hu, XT Zhan, Q Luo, Q Yu, Z Liu, TP Chen, Y Yin, S Hosaka, ...
IEEE Access 6, 16523-16528, 2018
372018
Programming margin enlargement by material engineering for multilevel storage in phase-change memory
Y Yin, T Noguchi, H Ohno, S Hosaka
Applied Physics Letters 95 (13), 133503, 2009
372009
Multilevel storage in lateral top-heater phase-change memory
Y Yin, K Ota, N Higano, H Sone, S Hosaka
IEEE electron device letters 29 (8), 876-878, 2008
332008
Ultramultiple-level storage in double-layer cell for high-density nonvolatile memory
Y Yin, N Higano, H Sone, S Hosaka
Applied Physics Letters 92 (16), 163509, 2008
332008
Handwritten-digit recognition by hybrid convolutional neural network based on HfO2 memristive spiking-neuron
JJ Wang, SG Hu, XT Zhan, Q Yu, Z Liu, TP Chen, Y Yin, S Hosaka, Y Liu
Scientific reports 8 (1), 1-7, 2018
312018
Electrical properties of phase change and channel current control in ultrathin phase-change channel transistor memory by annealing
Y Yin, A Miyachi, D Niida, H Sone, S Hosaka
Japanese journal of applied physics 45 (4S), 3238, 2006
292006
Extremely small proximity effect in 30 keV electron beam drawing with thin calixarene resist for 20 20 nm2 pitch dot arrays
S Hosaka, Z Mohamad, M Shira, H Sano, Y Yin, A Miyachi, H Sone
Applied physics express 1 (2), 027003, 2008
242008
Possibility of forming 18-nm-pitch ultrahigh density fine dot arrays for 2 Tbit/in. 2 patterned media using 30-keV electron beam lithography
S Hosaka, Y Tanaka, M Shirai, Z Mohamad, Y Yin
Japanese Journal of Applied Physics 49 (4R), 046503, 2010
212010
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