| Silicon single-electron devices Y Takahashi, Y Ono, A Fujiwara, H Inokawa Journal of physics: Condensed matter 14 (39), R995, 2002 | 242 | 2002 |
| Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor A Fujiwara, K Nishiguchi, Y Ono Applied Physics Letters 92 (4), 042102, 2008 | 200 | 2008 |
| Pauli-spin-blockade transport through a silicon double quantum dot HW Liu, T Fujisawa, Y Ono, H Inokawa, A Fujiwara, K Takashina, ... Physical Review B 77 (7), 073310, 2008 | 163 | 2008 |
| A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors H Inokawa, A Fujiwara, Y Takahashi IEEE Transactions on electron devices 50 (2), 462-470, 2003 | 162 | 2003 |
| Interconnect-free parallel logic circuits in a single mechanical resonator I Mahboob, E Flurin, K Nishiguchi, A Fujiwara, H Yamaguchi Nature communications 2 (1), 1-7, 2011 | 156 | 2011 |
| Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor A Fujiwara, H Inokawa, K Yamazaki, H Namatsu, Y Takahashi, ... Applied Physics Letters 88 (5), 053121, 2006 | 156 | 2006 |
| Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor A Fujiwara, H Inokawa, K Yamazaki, H Namatsu, Y Takahashi, ... Applied Physics Letters 88 (5), 053121, 2006 | 156 | 2006 |
| Manipulation and detection of single electrons for future information processing Y Ono, A Fujiwara, K Nishiguchi, H Inokawa, Y Takahashi Journal of Applied Physics 97 (3), 2, 2005 | 153 | 2005 |
| Valley polarization in Si (100) at zero magnetic field K Takashina, Y Ono, A Fujiwara, Y Takahashi, Y Hirayama Physical review letters 96 (23), 236801, 2006 | 147 | 2006 |
| Current quantization due to single-electron transfer in Si-wire charge-coupled devices A Fujiwara, NM Zimmerman, Y Ono, Y Takahashi Applied physics letters 84 (8), 1323-1325, 2004 | 138 | 2004 |
| Phonon lasing in an electromechanical resonator I Mahboob, K Nishiguchi, A Fujiwara, H Yamaguchi Physical review letters 110 (12), 127202, 2013 | 128 | 2013 |
| Multigate single-electron transistors and their application to an exclusive-OR gate Y Takahashi, A Fujiwara, K Yamazaki, H Namatsu, K Kurihara, K Murase Applied Physics Letters 76 (5), 637-639, 2000 | 123 | 2000 |
| Conductance modulation by individual acceptors in Si nanoscale field-effect transistors Y Ono, K Nishiguchi, A Fujiwara, H Yamaguchi, H Inokawa, Y Takahashi Applied Physics Letters 90 (10), 102106, 2007 | 118 | 2007 |
| Manipulation of elementary charge in a silicon charge-coupled device A Fujiwara, Y Takahashi Nature 410 (6828), 560-562, 2001 | 111 | 2001 |
| Excellent charge offset stability in a Si-based single-electron tunneling transistor NM Zimmerman, WH Huber, A Fujiwara, Y Takahashi Applied Physics Letters 79 (19), 3188-3190, 2001 | 110 | 2001 |
| High inversion current in silicon nanowire field effect transistors SM Koo, A Fujiwara, JP Han, EM Vogel, CA Richter, JE Bonevich Nano Letters 4 (11), 2197-2201, 2004 | 109 | 2004 |
| Involvement of the Sonic hedgehog gene in chick feather formation T Nohno, Y Kawakami, H Ohuchi, A Fujiwara, H Yoshioka, S Noji Biochemical and biophysical research communications 206 (1), 33-39, 1995 | 105 | 1995 |
| Self-diffusion of Si in thermally grown under equilibrium conditions T Takahashi, S Fukatsu, KM Itoh, M Uematsu, A Fujiwara, H Kageshima, ... Journal of applied physics 93 (6), 3674-3676, 2003 | 94 | 2003 |
| A silicon nanowire ion-sensitive field-effect transistor with elementary charge sensitivity N Clément, K Nishiguchi, JF Dufrêche, D Guerin, A Fujiwara, D Vuillaume Applied Physics Letters 98 (1), 014104, 2011 | 87 | 2011 |
| Spectral blue shift of photoluminescence in strained‐layer Si1−xGex/Si quantum well structures grown by gas‐source Si molecular beam epitaxy S Fukatsu, H Yoshida, A Fujiwara, Y Takahashi, Y Shiraki, R Ito Applied physics letters 61 (7), 804-806, 1992 | 87 | 1992 |
