Curt A Richter
Curt A Richter
Leader, Quantum Transport Project, National Institute of Standards and Technology
Verified email at nist.gov
Title
Cited by
Cited by
Year
Toward clean and crackless transfer of graphene
X Liang, BA Sperling, I Calizo, G Cheng, CA Hacker, Q Zhang, Y Obeng, ...
ACS nano 5 (11), 9144-9153, 2011
8142011
Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits
DJ Gundlach, JE Royer, SK Park, S Subramanian, OD Jurchescu, ...
Nature materials 7 (3), 216-221, 2008
5012008
New resistivity for high-mobility quantum Hall conductors
PL McEuen, A Szafer, CA Richter, BW Alphenaar, JK Jain, AD Stone, ...
Phys. Rev. Lett. 64 (17), 2062, 1990
2891990
New resistivity for high-mobility quantum Hall conductors
PL McEuen, A Szafer, CA Richter, BW Alphenaar, JK Jain, AD Stone, ...
Phys. Rev. Lett. 64, 2062, 1990
2891990
A flexible solution-processed memristor
N Gergel-Hackett, B Hamadani, B Dunlap, J Suehle, C Richter, C Hacker, ...
IEEE Electron Device Letters 30 (7), 706-708, 2009
2692009
Variations in semiconducting polymer microstructure and hole mobility with spin-coating speed
DM DeLongchamp, BM Vogel, Y Jung, MC Gurau, CA Richter, OA Kirillov, ...
Chemistry of materials 17 (23), 5610-5612, 2005
2662005
Spectroscopic ellipsometry characterization of high-k dielectric thin films and the high-temperature annealing effects on their optical properties
YJ Cho, NV Nguyen, CA Richter, JR Ehrstein, BH Lee, JC Lee
Applied physics letters 80 (7), 1249-1251, 2002
1892002
Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors
SM Koo, MD Edelstein, Q Li, CA Richter, EM Vogel
Nanotechnology 16 (9), 1482, 2005
1712005
Enhanced channel modulation in dual-gated silicon nanowire transistors
SM Koo, Q Li, MD Edelstein, CA Richter, EM Vogel
Nano letters 5 (12), 2519-2523, 2005
1692005
Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy
R Yan, Q Zhang, W Li, I Calizo, T Shen, CA Richter, AR Hight-Walker, ...
Applied Physics Letters 101 (2), 022105, 2012
1632012
Ultraviolet/ozone treatment to reduce metal-graphene contact resistance
W Li, Y Liang, D Yu, L Peng, KP Pernstich, T Shen, AR Hight Walker, ...
Applied Physics Letters 102 (18), 183110, 2013
1522013
Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics
EM Vogel, WK Henson, CA Richter, JS Suehle
IEEE Transactions on Electron Devices 47 (3), 601-608, 2000
1282000
Broadband optical properties of large-area monolayer CVD molybdenum disulfide
W Li, AG Birdwell, M Amani, RA Burke, X Ling, YH Lee, X Liang, L Peng, ...
Physical Review B 90 (19), 195434, 2014
1132014
High inversion current in silicon nanowire field effect transistors
SM Koo, A Fujiwara, JP Han, EM Vogel, CA Richter, JE Bonevich
Nano Letters 4 (11), 2197-2201, 2004
1092004
A comparison of quantum-mechanical capacitance-voltage simulators
CA Richter, AR Hefner, EM Vogel
IEEE Electron Device Letters 22 (1), 35-37, 2001
1032001
Controllable, Wide‐Ranging n‐Doping and p‐Doping of Monolayer Group 6 Transition‐Metal Disulfides and Diselenides
S Zhang, HM Hill, K Moudgil, CA Richter, AR Hight Walker, S Barlow, ...
Advanced Materials 30 (36), 1802991, 2018
1022018
Comparison of Si− O− C Interfacial Bonding of Alcohols and Aldehydes on Si (111) Formed from Dilute Solution with Ultraviolet Irradiation
CA Hacker, KA Anderson, LJ Richter, CA Richter
Langmuir 21 (3), 882-889, 2005
952005
Influence of a water rinse on the structure and properties of poly (3, 4-ethylene dioxythiophene): poly (styrene sulfonate) films
DM DeLongchamp, BD Vogt, CM Brooks, K Kano, J Obrzut, CA Richter, ...
Langmuir 21 (24), 11480-11483, 2005
922005
Influence of Metal–MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts
H Yuan, G Cheng, L You, H Li, H Zhu, W Li, JJ Kopanski, YS Obeng, ...
ACS applied materials & interfaces 7 (2), 1180-1187, 2015
872015
Topological insulator Bi 2 Se 3 nanowire high performance field-effect transistors
H Zhu, CA Richter, E Zhao, JE Bonevich, WA Kimes, HJ Jang, H Yuan, ...
Scientific reports 3 (1), 1-5, 2013
832013
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Articles 1–20