| High‐performance transition metal dichalcogenide photodetectors enhanced by self‐assembled monolayer doping DH Kang, MS Kim, J Shim, J Jeon, HY Park, WS Jung, HY Yu, CH Pang, ... Advanced Functional Materials 25 (27), 4219-4227, 2015 | 300 | 2015 |
| N-Channel Germanium MOSFET Fabricated Below 360 by Cobalt-Induced Dopant Activation for Monolithic Three-Dimensional-ICs JH Park, D Kuzum, WS Jung, KC Saraswat Electron Device Letters, IEEE 32 (3), 234-236, 2011 | 241 | 2011 |
| Controllable nondegenerate p-type doping of tungsten diselenide by octadecyltrichlorosilane DH Kang, J Shim, SK Jang, J Jeon, MH Jeon, GY Yeom, WS Jung, ... ACS nano 9 (2), 1099-1107, 2015 | 164 | 2015 |
| Strain-induced pseudoheterostructure nanowires confining carriers at room temperature with nanoscale-tunable band profiles D Nam, DS Sukhdeo, JH Kang, J Petykiewicz, JH Lee, WS Jung, ... Nano letters 13 (7), 3118-3123, 2013 | 144 | 2013 |
| Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism. J Shim, HS Kim, YS Shim, DH Kang, HY Park, J Lee, J Jeon, SJ Jung, ... Advanced Materials (Deerfield Beach, Fla.) 28 (26), 5293-5299, 2016 | 110 | 2016 |
| Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design. HY Park, WS Jung, DH Kang, J Jeon, G Yoo, Y Park, J Lee, YH Jang, ... Advanced Materials (Deerfield Beach, Fla.) 28 (5), 864-870, 2015 | 98 | 2015 |
| High-efficiency pin photodetectors on selective-area-grown Ge for monolithic integration HY Yu, S Ren, WS Jung, AK Okyay, DAB Miller, KC Saraswat IEEE Electron Device Letters 30 (11), 1161-1163, 2009 | 76 | 2009 |
| Wide-Range Controllable n-Doping of Molybdenum Disulfide (MoS2) through Thermal and Optical Activation HY Park, MH Lim, J Jeon, G Yoo, DH Kang, SK Jang, MH Jeon, Y Lee, ... ACS nano 9 (3), 2368-2376, 2015 | 72 | 2015 |
| Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application WS Jung, JH Park, A Nainani, D Nam, KC Saraswat Applied Physics Letters 101 (7), 2012 | 55 | 2012 |
| Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization HW Jung, WS Jung, HY Yu, JH Park Journal of alloys and compounds 561, 231-233, 2013 | 44 | 2013 |
| Monolithic integration of germanium-on-insulator pin photodetector on silicon JH Nam, F Afshinmanesh, D Nam, WS Jung, TI Kamins, ML Brongersma, ... Optics express 23 (12), 15816-15823, 2015 | 42 | 2015 |
| Metal-induced dopant (boron and phosphorus) activation process in amorphous germanium for monolithic three-dimensional integration JH Park, M Tada, WS Jung, HSP Wong, KC Saraswat Journal of Applied Physics 106 (7), 074510-074510-6, 2009 | 36 | 2009 |
| 9.4% efficient amorphous silicon solar cell on high aspect-ratio glass microcones. J Kim, C Battaglia, M Charrière, A Hong, W Jung, H Park, C Ballif, ... Advanced Materials (Deerfield Beach, Fla.) 26 (24), 4082-4086, 2014 | 34 | 2014 |
| Formation of metal nanospheres and microspheres AJ Hong, WS Jung, J Kim, JW Nah, DK Sadana US Patent 8,685,858, 2014 | 29 | 2014 |
| Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter IY Lee, HY Park, JH Park, J Lee, WS Jung, HY Yu, SW Kim, GH Kim, ... Organic Electronics 14 (6), 1586-1590, 2013 | 29 | 2013 |
| Poly-4-vinylphenol and poly (melamine-co-formaldehyde)-based graphene passivation method for flexible, wearable and transparent electronics I Lee, HY Park, J Park, G Yoo, MH Lim, J Park, S Rathi, WS Jung, J Kim, ... Nanoscale 6 (7), 3830-3836, 2014 | 25 | 2014 |
| Formation of metal nanospheres and microspheres AJ Hong, WS Jung, J Kim, JW Nahum, DK Sadana US Patent 9,040,428, 2015 | 24 | 2015 |
| Formation of metal nanospheres and microspheres AJ Hong, WS Jung, J Kim, JW Nahum, DK Sadana US Patent 9,040,428, 2015 | 24 | 2015 |
| Characterization of Geometric Leakage Current of GeO2 Isolation and Effect of Forming Gas Annealing in Germanium p-n Junctions WS Jung, JH Park, JYJ Lin, S Wong, KC Saraswat Electron Device Letters, IEEE, 1-3, 2012 | 18* | 2012 |
| Impacts of the thermal recovery process on In–Ga–Zn–O (IGZO) TFTs SH Choi, MH Lim, WS Jung, JH Park IEEE electron device letters 35 (8), 835-837, 2014 | 17 | 2014 |
Donguk NamAssociate Professor, Nanyang Technological University (NTU)כתובת אימייל מאומתת בדומיין ntu.edu.sg
