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Jonathan J. Wierer, Jr.
Jonathan J. Wierer, Jr.
NC State University, Department of Electrical and Computer Engineering
Verified email at ncsu.edu - Homepage
Title
Cited by
Cited by
Year
High-power AlGaInN flip-chip light-emitting diodes
JJ Wierer, DA Steigerwald, MR Krames, JJ O’shea, MJ Ludowise, ...
Applied Physics Letters 78 (22), 3379-3381, 2001
7762001
III-nitride photonic-crystal light-emitting diodes with high extraction efficiency
JJ Wierer, A David, MM Megens
Nature Photonics 3 (3), 163-169, 2009
7592009
InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures
JJ Wierer, MR Krames, JE Epler, NF Gardner, MG Craford, JR Wendt, ...
Applied Physics Letters 84 (19), 3885-3887, 2004
4932004
Comparison between blue lasers and light-emitting diodes for future solid-state lighting
JJ Wierer Jr., JY Tsao, DS Sizov
Lasers and Photonics Reviews 7 (6), 963–993, 2013
4192013
Toward smart and ultra‐efficient solid‐state lighting
JY Tsao, MH Crawford, ME Coltrin, AJ Fischer, DD Koleske, ...
Advanced Optical Materials 2 (9), 809-836, 2014
3102014
High power LEDs–Technology status and market applications
FM Steranka, J Bhat, D Collins, L Cook, MG Craford, R Fletcher, ...
physica status solidi (a) 194 (2), 380-388, 2002
3062002
Highly reflective ohmic contacts to III-nitride flip-chip LEDs
DA Steigerwald, SD Lester, JJ Wierer Jr
US Patent 6,573,537, 2003
2752003
Polarization anisotropy in the electroluminescence of -plane multiple-quantum-well light-emitting diodes
NF Gardner, JC Kim, JJ Wierer, YC Shen, MR Krames
Applied Physics Letters 86 (11), 111101, 2005
2712005
Photonic crystal light emitting device
JJ Wierer, MR Krames, JE Epler
US Patent 7,675,084, 2010
257*2010
Four-color laser white illuminant demonstrating high color-rendering quality
A Neumann, JJ Wierer, W Davis, Y Ohno, SRJ Brueck, JY Tsao
Optics express 19 (104), A982-A990, 2011
2362011
III-nitride light-emitting device with increased light generating capability
MR Krames, DA Steigerwald, FA Kish Jr, P Rajkomar, JJ Wierer Jr, ...
US Patent 6,486,499, 2002
2102002
Photonic crystal light emitting device
JJ Wierer Jr, MR Krames, MM Sigalas
US Patent 7,012,279, 2006
2062006
High‐efficiency, microscale GaN light‐emitting diodes and their thermal properties on unusual substrates
T Kim, YH Jung, J Song, D Kim, Y Li, H Kim, IS Song, JJ Wierer, HA Pao, ...
small 8 (11), 1643-1649, 2012
2042012
Semiconductor light emitting devices
NF Gardner, JJ Wierer Jr, GO Mueller, MR Krames
US Patent 6,847,057, 2005
1952005
Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes
YC Shen, JJ Wierer, MR Krames, MJ Ludowise, MS Misra, F Ahmed, ...
Applied Physics Letters 82 (14), 2221-2223, 2003
1772003
LED efficiency using photonic crystal structure
JJW M. R. Krames, M. M. Sigalas
US Patent App. 2003 0/141,507, 2003
174*2003
LED including photonic crystal structure
US Patent 7,279,718, 0
174*
Performance of high‐power AlInGaN light emitting diodes
AY Kim, W Götz, DA Steigerwald, JJ Wierer, NF Gardner, J Sun, ...
Physica status solidi (a) 188 (1), 15-21, 2001
1592001
III-Nitride Light-emitting device with increased light generating capability (US 6,521,914)
MR Krames, DA Steigerwald, FA Kish Jr, P Rajkomar, JJ Wierer Jr, ...
US Patent 6,521,914, 2003
1522003
Method of making a III-nitride light-emitting device with increased light generating capability
JJ Wierer Jr, MR Krames, DA Steigerwald, FA Kish Jr, P Rajkomar
US Patent 6,514,782, 2003
1462003
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