עקוב אחר
Andres Godoy
Andres Godoy
כתובת אימייל מאומתת בדומיין ugr.es
כותרת
צוטט על ידי
צוטט על ידי
שנה
Analytic model for the surface potential and drain current in negative capacitance field-effect transistors
D Jimenez, E Miranda, A Godoy
IEEE Transactions on Electron Devices 57 (10), 2405-2409, 2010
1662010
Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide–semiconductor structures
A Palma, A Godoy, JA Jimenez-Tejada, JE Carceller, ...
Physical Review B 56 (15), 9565, 1997
1621997
Modeling the centroid and the inversion charge in cylindrical surrounding gate MOSFETs, including quantum effects
JB Roldan, A Godoy, F Gamiz, M Balaguer
IEEE transactions on electron devices 55 (1), 411-416, 2007
1012007
A comprehensive study of the corner effects in Pi-gate MOSFETs including quantum effects
FJG Ruiz, A Godoy, F Gamiz, C Sampedro, L Donetti
IEEE Transactions on Electron Devices 54 (12), 3369-3377, 2007
952007
High photocurrent in gated graphene–silicon hybrid photodiodes
S Riazimehr, S Kataria, R Bornemann, P Haring Bolívar, FJG Ruiz, ...
ACS photonics 4 (6), 1506-1514, 2017
932017
Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility
L Donetti, F Gámiz, JB Roldán, A Godoy
Journal of Applied Physics 100 (1), 2006
922006
High responsivity and quantum efficiency of graphene/silicon photodiodes achieved by interdigitating Schottky and gated regions
S Riazimehr, S Kataria, JM Gonzalez-Medina, S Wagner, M Shaygan, ...
Acs Photonics 6 (1), 107-115, 2018
782018
In-depth study of laser diode ablation of kapton polyimide for flexible conductive substrates
FJ Romero, A Salinas-Castillo, A Rivadeneyra, A Albrecht, A Godoy, ...
Nanomaterials 8 (7), 517, 2018
782018
A simple subthreshold swing model for short channel MOSFETs
A Godoy, JA López-Villanueva, JA Jiménez-Tejada, A Palma, F Gámiz
Solid-State Electronics 45 (3), 391-397, 2001
782001
Laser-Fabricated reduced graphene oxide memristors
FJ Romero, A Toral-Lopez, A Ohata, DP Morales, FG Ruiz, A Godoy, ...
Nanomaterials 9 (6), 897, 2019
592019
Resistive switching in graphene oxide
FJ Romero, A Toral, A Medina-Rull, CL Moraila-Martinez, DP Morales, ...
Frontiers in Materials 7, 17, 2020
542020
Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI
C Sampedro, F Gámiz, A Godoy, R Valin, A Garcia-Loureiro, FG Ruiz
Solid-State Electronics 54 (2), 131-136, 2010
532010
Impact of quantum confinement on gate threshold voltage and subthreshold swings in double-gate tunnel FETs
JL Padilla, F Gamiz, A Godoy
IEEE transactions on electron devices 59 (12), 3205-3211, 2012
482012
A simple approach to quantum confinement in tunneling field-effect transistors
JL Padilla, F Gamiz, A Godoy
IEEE electron device letters 33 (10), 1342-1344, 2012
432012
An Analytical Model for Surrounding-Gate Transistors That Includes Quantum and Velocity Overshoot Effects
JB Roldán, F Gamiz, F Jiménez-Molinos, C Sampedro, A Godoy, ...
IEEE transactions on electron devices 57 (11), 2925-2933, 2010
422010
Modeling the equivalent oxide thickness of surrounding gate SOI devices with high-κ insulators
IM Tienda-Luna, FJG Ruiz, L Donetti, A Godoy, F Gámiz
Solid-State Electronics 52 (12), 1854-1860, 2008
422008
Equivalent Oxide Thickness of Trigate SOI MOSFETs With High- Insulators
FJG Ruiz, IM Tienda-Luna, A Godoy, L Donetti, F Gámiz
IEEE Transactions on Electron Devices 56 (11), 2711-2719, 2009
392009
Effects of nonparabolic bands in quantum wires
A Godoy, Z Yang, U Ravaioli, F Gámiz
Journal of applied physics 98 (1), 013702, 2005
362005
Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration
F Gamiz, JB Roldan, A Godoy, P Cartujo-Cassinello, JE Carceller
Journal of applied physics 94 (9), 5732-5741, 2003
362003
An analytical model for square GAA MOSFETs including quantum effects
E Moreno, JB Roldan, FG Ruiz, D Barrera, A Godoy, F Gámiz
Solid-State Electronics 54 (11), 1463-1469, 2010
352010
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מאמרים 1–20