| A new drain current model for a dual metal junctionless transistor for enhanced digital circuit performance JC Pravin, D Nirmal, P Prajoon, MA Menokey IEEE Transactions on Electron Devices 63 (9), 3782-3789, 2016 | 37 | 2016 |
| A modified ABC model in InGaN MQW LED using compositionally step graded Alternating Barrier for efficiency improvement P Prajoon, D Nirmal, MA Menokey, JC Pravin Superlattices and Microstructures 96, 155-163, 2016 | 19 | 2016 |
| Temperature-dependent efficiency droop analysis of InGaN MQW light-emitting diode with modified ABC model P Prajoon, D Nirmal, MA Menokey, JC Pravin Journal of Computational Electronics 15, 1511-1520, 2016 | 15 | 2016 |
| Efficiency enhancement of InGaN MQW LED using compositionally step graded InGaN barrier on SiC substrate P Prajoon, D Nirmal, MA Menokey, JC Pravin Journal of Display Technology 12 (10), 1117-1121, 2016 | 12 | 2016 |
| Investigation of efficiency enhancement in InGaN MQW LED with compositionally step graded GaN/InAlN/GaN multi-layer barrier P Prajoon, MA Menokey, JC Pravin, J Ajayan, S Rajesh, D Nirmal Superlattices and Microstructures 116, 71-78, 2018 | 8 | 2018 |
| Impact of gate length on the performance of a junctionless dual metal transistor with high-k dielectrics C Pravin, D Nirmal, P Prajoon, A Sharma, MA Menokey 2016 3rd International Conference on Devices, Circuits and Systems (ICDCS …, 2016 | 6 | 2016 |
| Airy function-based model for 2-DEG charge and surface potential in N-polar gallium nitride heterostructures MA Menokey, A Ajoy IEEE Transactions on Electron Devices 69 (7), 3861-3868, 2022 | 3 | 2022 |
| Green InGaN/GaN LEDs with p-GaN interlayer for efficiency droop improvement MA Menokey, D Nirmal, P Prajoon, JC Pravin 2016 3rd International Conference on Devices, Circuits and Systems (ICDCS …, 2016 | 3 | 2016 |
| A Closed-Form Model for 2-DEG Charge and Surface Potential in N-Polar Gallium Nitride Heterostructures MA Menokey, A Ajoy IEEE Transactions on Electron Devices, 2023 | 1 | 2023 |
| A Surface-Potential Model for N-Polar GaN/AlN/AlGaN MIS-HEMTs MA Menokey, A Ajoy 2018 4th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2018 | | 2018 |
Dr. P. PrajoonJyothi Engineering College, Cheruthuruthy, Kerala, IndiaVerified email at jecc.ac.in
