| Normally‐off AlGaN/GaN MOS‐HEMT using ultra‐thin Al0.45Ga0.55N barrier layer A Chakroun, A Jaouad, M Bouchilaoun, O Arenas, A Soltani, H Maher physica status solidi (a) 214 (8), 1600836, 2017 | 29 | 2017 |
| Characterization of dynamic self-heating in GaN HEMTs using gate resistance measurement A Cutivet, F Cozette, M Bouchilaoun, A Chakroun, O Arenas, M Lesecq, ... IEEE Electron Device Letters 38 (2), 240-243, 2016 | 24 | 2016 |
| Scalable modeling of transient self-heating of GaN high-electron-mobility transistors based on experimental measurements A Cutivet, G Pavlidis, B Hassan, M Bouchilaoun, C Rodriguez, A Soltani, ... IEEE Transactions on Electron Devices 66 (5), 2139-2145, 2019 | 13 | 2019 |
| A Hydrogen plasma treatment for soft and selective silicon nitride etching M Bouchilaoun, A Soltani, A Chakroun, A Jaouad, M Darnon, F Boone, ... physica status solidi (a) 215 (9), 1700658, 2018 | 12 | 2018 |
| Large periphery GaN HEMTs modeling using distributed gate resistance B Hassan, A Cutivet, M Bouchilaoun, C Rodriguez, A Soltani, F Boone, ... physica status solidi (a) 216 (1), 1800505, 2019 | 8 | 2019 |
| Low source/drain contact resistance for AlGaN/GaN HEMTs with high Al concentration and Si-HP [111] substrate SJ Duffy, B Benbakhti, M Mattalah, W Zhang, M Bouchilaoun, ... ECS Journal of Solid State Science and Technology 6 (11), S3040, 2017 | 8 | 2017 |
| Thermal transient extraction for GaN HEMTs by frequency‐resolved gate resistance thermometry with sub‐100 ns time resolution A Cutivet, M Bouchilaoun, B Hassan, C Rodriguez, A Soltani, F Boone, ... physica status solidi (a) 216 (1), 1800503, 2019 | 7 | 2019 |
| High power normally-OFF GaN/AlGaN HEMT with regrown p type GaN G Rolland, C Rodriguez, G Gommé, A Boucherif, A Chakroun, ... Energies 14 (19), 6098, 2021 | 6 | 2021 |
| Thermal Impedance Extraction From Electrical Measurements for Double‐Ended Gate Transistors A Cutivet, M Bouchilaoun, A Chakroun, C Rodriguez, A Soltani, A Jaouad, ... physica status solidi c 14 (11), 1700225, 2017 | 4 | 2017 |
| Réalisation de transistors à haute mobilité électronique à enrichissement à base d’hétérostructure AlGaN/GaN pour les applications en électronique de puissance M BOUCHILAOUN Université de Sherbrooke, 2018 | 2 | 2018 |
| High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN. Energies 2021, 14, 6098 G Rolland, C Rodriguez, G Gommé, A Boucherif, A Chakroun, ... s Note: MDPI stays neutral with regard to jurisdictional claims in published …, 2021 | | 2021 |
| AlN grown by CBE for power device applications G Gommé, A Cutivet, B Bouzazi, AR Boucherif, T MacElwee, C Rodriguez, ... AIP Advances 10 (6), 2020 | | 2020 |
| Normally-OFF GaN HEMT Fabrication Using Soft and Selective Etching of the Si3N4 Cap Layer M Bouchilaoun, A Soltani, C Rodriguez, A Jaouad, H Maher The compound semiconductor week (CSW), 2018 | | 2018 |
| Scaling of GaN HEMTs Thermal Transient Characteristics A Cutivet, M Bouchilaoun, B Hassan, C Rodriguez, A Soltani, F Boone, ... The compound semiconductor week (CSW), 2018 | | 2018 |
| Characterization and modeling of transient self-heating in GaN HEMTs A Cutivet, M Bouchilaoun, A Chakroun, A Soltani, A Jaouad, F Boone, ... 12th International Conference on Nitride Semiconductors 2017 (ICNS-12), 2017 | | 2017 |
| High breakdown voltage on GaN HEMT thanks to a 3C-SiC interlayer on silicon substrate AS , Mohammed Boucherta, Meriem Bouchilaoun, Ahmed Chakroun, Adrien Cutivet ... 12th international conference on nitride semiconductors, Strasbourg, France, 2017 | | 2017 |
| New gate process for the fabrication of highly reliable AlGaN/GaN HEMT MB , Ahmed Chakroun, Ali Soltani, Maxime Darnon, Abdelatif Jaouad, Francois ... 12th international conference on nitride semiconductors, Strasbourg, France, 2017 | | 2017 |
| Characterization and modeling of transient self-heating in GaN HEMTs AC , Meriem Bouchilaoun, Ahmed Chakroun, Ali Soltani, Abdelatif Jaouad ... 12th international conference on nitride semiconductors (ICNS 2017), At …, 2017 | | 2017 |
| Normally-Off AlGaN/GaN MOS-HEMTs Using Ultra-Thin Al0. 45GaN0. 55N Barrier and PECVDSiOx as Gate Insulator A Chakroun, A Jaouad, M Bouchilaoun, O Arenas, A Soltani, H Maher International Workshop on Nitride Semiconductors (IWM2016), 2016 | | 2016 |
| Normally-Off AlGaN/GaN MOS-HEMTs Using Ultra-Thin Al0.45GaN0.55N Barrier and PECVD-SiOx as Gate Insulator AC , Abdelatif Jaouad, Meriem Bouchilaoun, Ali Soltani, Hassan Maher International Workshop on Nitride Semiconductors (IWN 2016), At Orlando, Florida, 2016 | | 2016 |
