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Rohith Soman
Rohith Soman
Post doctrate fellow, Stanford University
Verified email at stanford.edu
Title
Cited by
Cited by
Year
Single chip gas sensor array for air quality monitoring
CS Prajapati, R Soman, SB Rudraswamy, M Nayak, N Bhat
Journal of Microelectromechanical systems 26 (2), 433-439, 2017
822017
UV/near-IR dual band photodetector based on p-GaN/α-In2Se3 heterojunction
SV Solanke, R Soman, M Rangarajan, S Raghavan, DN Nath
Sensors and Actuators A: Physical 317, 112455, 2021
442021
Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer
K Zeng, R Soman, Z Bian, S Jeong, S Chowdhury
IEEE Electron Device Letters 43 (9), 1527-1530, 2022
422022
A Performance Comparison Between -Ga2O3 and GaN HEMTs
S Kumar, R Soman, AS Pratiyush, R Muralidharan, DN Nath
IEEE Transactions on Electron Devices 66 (8), 3310-3317, 2019
422019
Low Thermal Budget Growth of Near‐Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices
M Malakoutian, X Zheng, K Woo, R Soman, A Kasperovich, J Pomeroy, ...
Advanced Functional Materials 32 (47), 2208997, 2022
222022
Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes
N Mohan, M Manikant, R Soman, S Raghavan
Journal of Applied Physics 118 (13), 2015
222015
Trap assisted avalanche instability and safe operating area concerns in AlGaN/GaN HEMTs
B Shankar, A Soni, M Singh, R Soman, H Chandrasekar, N Mohan, ...
2017 IEEE International Reliability Physics Symposium (IRPS), WB-5.1-WB-5.5, 2017
192017
Novel all-around diamond integration with GaN HEMTs demonstrating highly efficient device cooling
R Soman, M Malakoutian, B Shankar, D Field, E Akso, N Hatui, NJ Hines, ...
2022 International Electron Devices Meeting (IEDM), 30.8. 1-30.8. 4, 2022
142022
Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates
R Soman, N Mohan, H Chandrasekar, N Bhat, S Raghavan
Journal of Applied Physics 124 (24), 2018
102018
Demonstration of N-polar all-AlGaN high electron mobility transistors with 375 mA/mm drive current
M Noshin, R Soman, S Chowdhury
IEEE Electron Device Letters 44 (7), 1072-1075, 2023
82023
Impact of Diamond Passivation on fT and fmax of mm-wave N-Polar GaN HEMTs
X Zhou, M Malakoutian, R Soman, Z Bian, RP Martinez, S Chowdhury
IEEE Transactions on Electron Devices 69 (12), 6650-6655, 2022
82022
Cooling future system-on-chips with diamond inter-tiers
M Malakoutian, A Kasperovich, D Rich, K Woo, C Perez, R Soman, ...
Cell Reports Physical Science 4 (12), 2023
72023
Curvature management in buffer layer for device quality GaN growth on Si (111)
A Bardhan, N Mohan, R Soman, Manikant, S Raghavan
IETE Technical Review 33 (1), 82-87, 2016
72016
Development of 300–400° C grown diamond for semiconductor devices thermal management
M Malakoutian, R Soman, K Woo, S Chowdhury
MRS Advances 9 (1), 7-11, 2024
62024
A systematic study of the regrown interface impurities in unintentionally doped Ga-polar c-plane GaN and methods to reduce the same
M Noshin, R Soman, X Xu, S Chowdhury
Semiconductor Science and Technology 37 (7), 075018, 2022
62022
An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate
R Soman, S Raghavan, N Bhat
Semiconductor Science and Technology 34 (12), 125011, 2019
62019
Scaling study on high-current density low-dispersion GaN vertical FinFETs
S Jeong, K Lee, J Chun, R Soman, S Chowdhury
IEEE Electron Device Letters 44 (5), 841-844, 2023
52023
Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces
M Malakoutian, K Woo, D Rich, R Mandia, X Zheng, A Kasperovich, ...
Advanced Electronic Materials 11 (1), 2400146, 2025
42025
Growth and mobility characterization of N-polar AlGaN channel high electron mobility transistors
M Noshin, X Wen, R Soman, X Xu, S Chowdhury
Applied Physics Letters 123 (6), 2023
42023
A study on MOCVD growth window for high quality N-polar GaN for vertical device applications
R Soman, M Noshin, S Chowdhury
Semiconductor Science and Technology 37 (9), 095003, 2022
42022
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