| The SuperCam instrument suite on the Mars 2020 rover: science objectives and mast-unit description S Maurice, RC Wiens, P Bernardi, P Caïs, S Robinson, T Nelson, ... Space Science Reviews 217, 1-108, 2021 | 191 | 2021 |
| Radiation effects in pinned photodiode CMOS image sensors: Pixel performance degradation due to total ionizing dose V Goiffon, M Estribeau, O Marcelot, P Cervantes, P Magnan, M Gaillardin, ... IEEE Transactions on Nuclear Science 59 (6), 2878-2887, 2012 | 109 | 2012 |
| Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology C Virmontois, V Goiffon, P Magnan, S Girard, C Inguimbert, S Petit, ... IEEE Transactions on Nuclear Science 57 (6), 3101-3108, 2010 | 82 | 2010 |
| Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors C Virmontois, V Goiffon, P Magnan, O Saint-Pé, S Girard, S Petit, ... IEEE Transactions on Nuclear Science 58 (6), 3085-3094, 2011 | 75 | 2011 |
| Analysis of total dose-induced dark current in CMOS image sensors from interface state and trapped charge density measurements V Goiffon, C Virmontois, P Magnan, S Girard, P Paillet IEEE Transactions on Nuclear Science 57 (6), 3087-3094, 2010 | 74 | 2010 |
| Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors V Goiffon, C Virmontois, P Magnan, P Cervantes, S Place, M Gaillardin, ... IEEE Transactions on Nuclear Science 59 (4), 918-926, 2012 | 58 | 2012 |
| Similarities between proton and neutron induced dark current distribution in CMOS image sensors C Virmontois, V Goiffon, P Magnan, S Girard, O Saint-Pe, S Petit, ... IEEE Transactions on Nuclear Science 59 (4), 927-936, 2012 | 53 | 2012 |
| Dark current random telegraph signals in solid-state image sensors C Virmontois, V Goiffon, MS Robbins, L Tauziède, H Geoffray, M Raine, ... IEEE Transactions on Nuclear Science 60 (6), 4323-4331, 2013 | 51 | 2013 |
| Evidence of a novel source of random telegraph signal in CMOS image sensors V Goiffon, P Magnan, P Martin-Gonthier, C Virmontois, M Gaillardin IEEE electron device letters 32 (6), 773-775, 2011 | 51 | 2011 |
| Radiation-induced dose and single event effects in digital CMOS image sensors C Virmontois, A Toulemont, G Rolland, A Materne, V Lalucaa, V Goiffon, ... IEEE Transactions on Nuclear Science 61 (6), 3331-3340, 2014 | 49 | 2014 |
| Displacement damage effects in pinned photodiode CMOS image sensors C Virmontois, V Goiffon, F Corbiere, P Magnan, S Girard, A Bardoux IEEE Transactions on Nuclear Science 59 (6), 2872-2877, 2012 | 43 | 2012 |
| A rover for the JAXA MMX Mission to Phobos S Ulamec, P Michel, M Grott, U Böttger, HW Hübers, N Murdoch, ... 70th International Astronautical Congress, IAC 2019, IAC-19, 2019 | 40 | 2019 |
| Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes V Goiffon, C Virmontois, P Magnan, P Cervantes, F Corbière, M Estribeau, ... Sensors, Systems, and Next-Generation Satellites XIV 7826, 486-497, 2010 | 37 | 2010 |
| Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes V Goiffon, P Cervantes, C Virmontois, F Corbière, P Magnan, M Estribeau IEEE Transactions on Nuclear Science 58 (6), 3076-3084, 2011 | 36 | 2011 |
| In-depth analysis on radiation induced multi-level dark current random telegraph signal in silicon solid state image sensors C Durnez, V Goiffon, C Virmontois, JM Belloir, P Magnan, L Rubaldo IEEE Transactions on Nuclear Science 64 (1), 19-26, 2016 | 34 | 2016 |
| Dose and single-event effects on a color CMOS camera for space exploration C Virmontois, JM Belloir, M Beaumel, A Vriet, N Perrot, C Sellier, J Bezine, ... IEEE Transactions on Nuclear Science 66 (1), 104-110, 2018 | 29 | 2018 |
| Proton and -Rays Irradiation-Induced Dark Current Random Telegraph Signal in a 0.18- CMOS Image Sensor E Martin, T Nuns, C Virmontois, JP David, O Gilard IEEE Transactions on Nuclear Science 60 (4), 2503-2510, 2013 | 28 | 2013 |
| Temperature dependence and dynamic behavior of full well capacity in pinned photodiode CMOS image sensors A Pelamatti, JM Belloir, C Messien, V Goiffon, M Estribeau, P Magnan, ... IEEE transactions on electron devices 62 (4), 1200-1207, 2015 | 26 | 2015 |
| Investigation of dark current random telegraph signal in pinned photodiode CMOS image sensors V Goiffon, C Virmontois, P Magnan 2011 International Electron Devices Meeting, 8.4. 1-8.4. 4, 2011 | 25 | 2011 |
| Dark count rate modeling in single-photon avalanche diodes A Panglosse, P Martin-Gonthier, O Marcelot, C Virmontois, O Saint-Pé, ... IEEE Transactions on Circuits and Systems I: Regular Papers 67 (5), 1507-1515, 2020 | 24 | 2020 |
Vincent GoiffonFull Professor, ISAE-SUPAERO, Université de ToulouseVerified email at isae-supaero.fr
