Chinedu Christian Ahia
Chinedu Christian Ahia
Nelson Mandela University
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Photoluminescence and structural properties of unintentional single and double InGaSb/GaSb quantum wells grown by MOVPE
CC Ahia, N Tile, JR Botha, EJ Olivier
Physica B: Condensed Matter 535, 13-19, 2018
An investigation of near-infrared photoluminescence from AP-MOVPE grown InSb/GaSb quantum dot structures
CC Ahia, N Tile, ZN Urgessa, JR Botha, JH Neethling
Journal of Crystal Growth 458, 53-59, 2017
Atmospheric pressure-MOVPE growth of GaSb/GaAs quantum dots
N Tile, CC Ahia, J Olivier, JR Botha
Physica B: Condensed Matter 535, 20-23, 2018
Effect of InSb deposition time on low-temperature photoluminescence and room temperature Raman of MOVPE grown InSb/GaSb nanostructures
CC Ahia, N Tile, EL Meyer, JR Botha
Physica E: Low-dimensional Systems and Nanostructures 123, 114197, 2020
Dependence of optimum V/III ratio on substrate orientation, and influence of buffer layer on MOVPE grown InSb/GaSb quantum dots
CC Ahia, N Tile, JR Botha
Journal of Crystal Growth 507, 157-162, 2019
Long wavelength stacking induced shift of the near-infrared photoluminescence from unintentional MOVPE grown InGaSb/GaSb quantum wells
CC Ahia, N Tile, A Navarro, BG Blanco, JR Botha
AIP Advances 8 (7), 075004, 2018
Crystallinity and morphology of InSb epitaxial layers grown on GaSb by MOVPE using TDMASb and TMSb as Sb precursors
CC Ahia, N Tile, EL Meyer, JR Botha
Materials Science in Semiconductor Processing 127, 105698, 2021
Room-temperature photoluminescence of AP-MOVPE grown single GaSb/GaAs quantum dot layer
N Tile, CC Ahia, JR Botha
Journal of Crystal Growth 528, 125253, 2019
Critical V/III dependence of formation of high density GaSb/GaAs quantum dots grown by AP-MOVPE
N Tile, CC Ahia, JR Botha
Journal of Crystal Growth 500, 28-32, 2018
Design Criteria for Semiconductor Quantum Dots
CC Ahia, JR Botha
African Institute for Mathematical Sciences (AIMS-SA), 2013
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