Photoluminescence and structural properties of unintentional single and double InGaSb/GaSb quantum wells grown by MOVPE CC Ahia, N Tile, JR Botha, EJ Olivier Physica B: Condensed Matter 535, 13-19, 2018 | 5 | 2018 |
An investigation of near-infrared photoluminescence from AP-MOVPE grown InSb/GaSb quantum dot structures CC Ahia, N Tile, ZN Urgessa, JR Botha, JH Neethling Journal of Crystal Growth 458, 53-59, 2017 | 5 | 2017 |
Atmospheric pressure-MOVPE growth of GaSb/GaAs quantum dots N Tile, CC Ahia, J Olivier, JR Botha Physica B: Condensed Matter 535, 20-23, 2018 | 3 | 2018 |
Effect of InSb deposition time on low-temperature photoluminescence and room temperature Raman of MOVPE grown InSb/GaSb nanostructures CC Ahia, N Tile, EL Meyer, JR Botha Physica E: Low-dimensional Systems and Nanostructures 123, 114197, 2020 | 2 | 2020 |
Dependence of optimum V/III ratio on substrate orientation, and influence of buffer layer on MOVPE grown InSb/GaSb quantum dots CC Ahia, N Tile, JR Botha Journal of Crystal Growth 507, 157-162, 2019 | 2 | 2019 |
Long wavelength stacking induced shift of the near-infrared photoluminescence from unintentional MOVPE grown InGaSb/GaSb quantum wells CC Ahia, N Tile, A Navarro, BG Blanco, JR Botha AIP Advances 8 (7), 075004, 2018 | 2 | 2018 |
Crystallinity and morphology of InSb epitaxial layers grown on GaSb by MOVPE using TDMASb and TMSb as Sb precursors CC Ahia, N Tile, EL Meyer, JR Botha Materials Science in Semiconductor Processing 127, 105698, 2021 | | 2021 |
Room-temperature photoluminescence of AP-MOVPE grown single GaSb/GaAs quantum dot layer N Tile, CC Ahia, JR Botha Journal of Crystal Growth 528, 125253, 2019 | | 2019 |
Critical V/III dependence of formation of high density GaSb/GaAs quantum dots grown by AP-MOVPE N Tile, CC Ahia, JR Botha Journal of Crystal Growth 500, 28-32, 2018 | | 2018 |
Design Criteria for Semiconductor Quantum Dots CC Ahia, JR Botha African Institute for Mathematical Sciences (AIMS-SA), 2013 | | 2013 |