| Auger recombination in AlGaN quantum wells for UV light-emitting diodes F Nippert, M Tollabi Mazraehno, MJ Davies, MP Hoffmann, HJ Lugauer, ... Applied Physics Letters 113 (7), 2018 | 71 | 2018 |
| Structural, electronic, and optical properties of -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory S Schulz, DP Tanner, EP O'Reilly, MA Caro, TL Martin, PAJ Bagot, ... Physical Review B 92 (23), 235419, 2015 | 71 | 2015 |
| The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem FCP Massabuau, MJ Davies, F Oehler, SK Pamenter, EJ Thrush, ... Applied physics letters 105 (11), 2014 | 63 | 2014 |
| High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop MJ Davies, TJ Badcock, P Dawson, MJ Kappers, RA Oliver, ... Applied Physics Letters 102 (2), 2013 | 42 | 2013 |
| The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures MJ Davies, P Dawson, FCP Massabuau, RA Oliver, MJ Kappers, ... Applied Physics Letters 105 (9), 2014 | 29 | 2014 |
| Challenges for reliable internal quantum efficiency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology issues C Frankerl, MP Hoffmann, F Nippert, H Wang, C Brandl, N Tillner, ... Journal of Applied Physics 126 (7), 2019 | 27 | 2019 |
| Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures FCP Massabuau, MJ Davies, WE Blenkhorn, S Hammersley, MJ Kappers, ... physica status solidi (b) 252 (5), 928-935, 2015 | 24 | 2015 |
| A study of the inclusion of prelayers in InGaN/GaN single‐and multiple‐quantum‐well structures MJ Davies, P Dawson, FCP Massabuau, AL Fol, RA Oliver, MJ Kappers, ... physica status solidi (b) 252 (5), 866-872, 2015 | 24 | 2015 |
| Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells TJ Badcock, P Dawson, MJ Davies, MJ Kappers, FCP Massabuau, ... Journal of Applied Physics 115 (11), 2014 | 22 | 2014 |
| Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells MJ Davies, P Dawson, S Hammersley, T Zhu, MJ Kappers, CJ Humphreys, ... Applied Physics Letters 108 (25), 2016 | 21 | 2016 |
| Point defect‐induced UV‐C absorption in aluminum nitride epitaxial layers grown on sapphire substrates by metal‐organic chemical vapor deposition N Tillner, C Frankerl, F Nippert, MJ Davies, C Brandl, R Lösing, M Mandl, ... physica status solidi (b) 257 (12), 2000278, 2020 | 17 | 2020 |
| Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures MJ Davies, FCP Massabuau, P Dawson, RA Oliver, MJ Kappers, ... physica status solidi (c) 11 (3‐4), 710-713, 2014 | 17 | 2014 |
| Strongly localized carriers in Al-rich AlGaN/AlN single quantum wells grown on sapphire substrates C Frankerl, F Nippert, MP Hoffmann, H Wang, C Brandl, HJ Lugauer, ... Journal of Applied Physics 127 (9), 2020 | 15 | 2020 |
| A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers MJ Davies, S Hammersley, FCP Massabuau, P Dawson, RA Oliver, ... Journal of Applied Physics 119 (5), 2016 | 15 | 2016 |
| The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells MJ Davies, P Dawson, FCP Massabuau, F Oehler, RA Oliver, MJ Kappers, ... physica status solidi (c) 11 (3‐4), 750-753, 2014 | 14 | 2014 |
| Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells S Schulz, DSP Tanner, EP O'Reilly, MA Caro, F Tang, JT Griffiths, ... Applied Physics Letters 109 (22), 2016 | 13 | 2016 |
| Origin of carrier localization in AlGaN-based quantum well structures and implications for efficiency droop C Frankerl, F Nippert, A Gomez-Iglesias, MP Hoffmann, C Brandl, ... Applied Physics Letters 117 (10), 2020 | 12 | 2020 |
| A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates D Kundys, D Sutherland, MJ Davies, F Oehler, J Griffiths, P Dawson, ... Science and Technology of advanced MaTerialS 17 (1), 736-743, 2016 | 10 | 2016 |
| Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells GM Christian, S Hammersley, MJ Davies, P Dawson, MJ Kappers, ... physica status solidi (c) 13 (5‐6), 248-251, 2016 | 8 | 2016 |
| Carrier Dynamics in Al‐Rich AlGaN/AlN Quantum Well Structures Governed by Carrier Localization C Frankerl, F Nippert, MP Hoffmann, C Brandl, HJ Lugauer, R Zeisel, ... physica status solidi (b) 257 (12), 2000242, 2020 | 6 | 2020 |
F. C-P. MassabuauUniversity of Strathclydeכתובת אימייל מאומתת בדומיין strath.ac.uk
