Yi XUAN
Yi XUAN
Purdue University, Indiana University School of Medicine
Verified email at purdue.edu
Title
Cited by
Cited by
Year
An all-silicon passive optical diode
L Fan, J Wang, LT Varghese, H Shen, B Niu, Y Xuan, AM Weiner, M Qi
Science 335 (6067), 447-450, 2012
5952012
Fabrication of fully transparent nanowire transistors for transparent and flexible electronics
S Ju, A Facchetti, Y Xuan, J Liu, F Ishikawa, P Ye, C Zhou, TJ Marks, ...
Nature nanotechnology 2 (6), 378-384, 2007
5562007
Mode-locked dark pulse Kerr combs in normal-dispersion microresonators
X Xue, Y Xuan, Y Liu, PH Wang, S Chen, J Wang, DE Leaird, M Qi, ...
Nature Photonics 9 (9), 594-600, 2015
4102015
High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm
Y Xuan, YQ Wu, PD Ye
IEEE Electron Device Letters 29 (4), 294-296, 2008
3852008
Ultrabroad-bandwidth arbitrary radiofrequency waveform generation with a silicon photonic chip-based spectral shaper
MH Khan, H Shen, Y Xuan, L Zhao, S Xiao, DE Leaird, AM Weiner, M Qi
Nature Photonics 4 (2), 117-122, 2010
3582010
Top-gated graphene field-effect-transistors formed by decomposition of SiC
YQ Wu, PD Ye, MA Capano, Y Xuan, Y Sui, M Qi, JA Cooper, T Shen, ...
Applied Physics Letters 92 (9), 092102, 2008
2872008
Atomic-layer-deposited nanostructures for graphene-based nanoelectronics
Y Xuan, YQ Wu, T Shen, M Qi, MA Capano, JA Cooper, PD Ye
Applied Physics Letters 92 (1), 013101, 2008
2712008
InP-based transistor fabrication
P Ye, Z Cheng, Y Xuan, Y Wu, B Adekore, J Fiorenza
US Patent 8,329,541, 2012
2672012
Fundamentals of III-V semiconductor MOSFETs
S Oktyabrsky, DY Peide
Springer, 2010
2622010
Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Depositedas Gate Dielectric
Y Xuan, YQ Wu, HC Lin, T Shen, DY Peide
IEEE Electron Device Letters 28 (11), 935-938, 2007
2202007
Investigation of mode coupling in normal-dispersion silicon nitride microresonators for Kerr frequency comb generation
Y Liu, Y Xuan, X Xue, PH Wang, S Chen, AJ Metcalf, J Wang, DE Leaird, ...
optica 1 (3), 137-144, 2014
2182014
Programmable single-bandpass photonic RF filter based on Kerr comb from a microring
X Xue, Y Xuan, HJ Kim, J Wang, DE Leaird, M Qi, AM Weiner
Journal of Lightwave Technology 32 (20), 3557-3565, 2014
2052014
Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited gate dielectric
Y Xuan, HC Lin, PD Ye, GD Wilk
Applied physics letters 88 (26), 263518, 2006
2032006
High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2and HfAlO as gate dielectrics
Y Xuan, YQ Wu, T Shen, T Yang, PD Ye
2007 IEEE International Electron Devices Meeting, 637-640, 2007
1762007
High-Q silicon nitride microresonators exhibiting low-power frequency comb initiation
Y Xuan, Y Liu, LT Varghese, AJ Metcalf, X Xue, PH Wang, K Han, ...
Optica 3 (11), 1171-1180, 2016
1422016
Intracavity characterization of micro-comb generation in the single-soliton regime
PH Wang, JA Jaramillo-Villegas, Y Xuan, X Xue, C Bao, DE Leaird, M Qi, ...
Optics express 24 (10), 10890-10897, 2016
1262016
Simplified Surface Preparation for GaAs Passivation Using Atomic Layer-Deposited High- Dielectrics
Y Xuan, HC Lin, DY Peide
IEEE Transactions on electron devices 54 (8), 1811-1817, 2007
1242007
Normal‐dispersion microcombs enabled by controllable mode interactions
X Xue, Y Xuan, PH Wang, Y Liu, DE Leaird, M Qi, AM Weiner
Laser & Photonics Reviews 9 (4), L23-L28, 2015
1232015
Microcomb-based true-time-delay network for microwave beamforming with arbitrary beam pattern control
X Xue, Y Xuan, C Bao, S Li, X Zheng, B Zhou, M Qi, AM Weiner
Journal of Lightwave Technology 36 (12), 2312-2321, 2018
1222018
Microresonator Kerr frequency combs with high conversion efficiency
X Xue, PH Wang, Y Xuan, M Qi, AM Weiner
Laser & Photonics Reviews 11 (1), 1600276, 2017
1202017
The system can't perform the operation now. Try again later.
Articles 1–20