Janusz Andrzejewski
Janusz Andrzejewski
Wroclaw University of Technology, Institute of Physics
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Cited by
Cited by
Eight-band k⋅ p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots
J Andrzejewski, G Sęk, E O’Reilly, A Fiore, J Misiewicz
Journal of Applied Physics 107 (7), 2010
The energy-fine structure of multiple quantum wells grown at different temperatures and postgrown annealed
R Kudrawiec, EM Pavelescu, J Andrzejewski, J Misiewicz, A Gheorghiu, ...
Journal of applied physics 96 (5), 2909-2913, 2004
Energy Band Structure of Zn3P2‐Type Semiconductors: Analysis of the Crystal Structure Simplifications and Energy Band Calculations
J Andrzejewski, J Misiewicz
physica status solidi (b) 227 (2), 515-540, 2001
Wetting layer states of InAs∕ GaAs self-assembled quantum dot structures: Effect of intermixing and capping layer
G Sęk, K Ryczko, M Motyka, J Andrzejewski, K Wysocka, J Misiewicz, ...
Journal of Applied Physics 101 (6), 2007
Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy
A Maryński, G Sęk, A Musiał, J Andrzejewski, J Misiewicz, C Gilfert, ...
Journal of Applied Physics 114 (9), 2013
Phonon-assisted radiative recombination of excitons confined in strongly anisotropic nanostructures
Ł Dusanowski, A Musiał, A Maryński, P Mrowiński, J Andrzejewski, ...
Physical Review B 90 (12), 125424, 2014
Carrier relaxation dynamics in InAs/GaInAsP/InP (001) quantum dashes emitting near 1.55 μm
M Syperek, Ł Dusanowski, J Andrzejewski, W Rudno-Rudziński, G Sȩk, ...
Applied Physics Letters 103 (8), 2013
Influence of electronic coupling on the radiative lifetime in the (In, Ga) As/GaAs quantum dot–quantum well system
M Syperek, J Andrzejewski, W Rudno-Rudziński, G Sęk, J Misiewicz, ...
Physical Review B 85 (12), 125311, 2012
Polarization properties of columnar quantum dots: effects of aspect ratio and compositional contrast
P Ridha, LH Li, M Mexis, PM Smowton, J Andrzejewski, G Sek, ...
IEEE journal of quantum electronics 46 (2), 197-204, 2009
Toward weak confinement regime in epitaxial nanostructures: Interdependence of spatial character of quantum confinement and wave function extension in large and elongated …
A Musiał, P Gold, J Andrzejewski, A Löffler, J Misiewicz, S Höfling, ...
Physical Review B 90 (4), 045430, 2014
Height-driven linear polarization of the surface emission from quantum dashes
A Musiał, P Podemski, G Sęk, P Kaczmarkiewicz, J Andrzejewski, ...
Semiconductor Science and Technology 27 (10), 105022, 2012
Controlling the aspect ratio of quantum dots: from columnar dots to quantum rods
L Li, G Patriarche, N Chauvin, P Ridha, M Rossetti, J Andrzejewski, G Sek, ...
IEEE Journal of Selected Topics in Quantum Electronics 14 (4), 1204-1213, 2008
Electron-irradiation enhanced photoluminescence from GaInNAs∕ GaAs quantum wells subject to thermal annealing
EM Pavelescu, A Gheorghiu, M Dumitrescu, A Tukiainen, T Jouhti, ...
Applied physics letters 85 (25), 6158-6160, 2004
Optical and electronic properties of GaAs-based structures with columnar quantum dots
M Motyka, G Sęk, K Ryczko, J Andrzejewski, J Misiewicz, LH Li, A Fiore, ...
Applied physics letters 90 (18), 2007
Photoreflectance investigations of quantum well intermixing processes in compressively strained InGaAsP∕ InGaAsP quantum well laser structures emitting at 1.55 μm
A Podhorodecki, J Andrzejewski, R Kudrawiec, J Misiewicz, J Wojcik, ...
Journal of applied physics 100 (1), 2006
Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well‐Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers
W Rudno‐Rudziński, M Syperek, A Maryński, J Andrzejewski, J Misiewicz, ...
physica status solidi (a) 215 (4), 1700455, 2018
Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission
W Rudno-Rudziński, M Syperek, J Andrzejewski, A Maryński, J Misiewicz, ...
AIP Advances 7 (1), 2017
Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP (001) coupled quantum dots-quantum well structure emitting at 1.55 μm
M Syperek, J Andrzejewski, E Rogowicz, J Misiewicz, S Bauer, ...
Applied Physics Letters 112 (22), 2018
Electronic structure and optical properties of 1.55 µm emitting InAs/InGaAsP quantum dash tunnel injection structures
W Rudno-Rudziński, G Sęk, J Andrzejewski, J Misiewicz, F Lelarge, ...
Semiconductor Science and Technology 27 (10), 105015, 2012
On optimizing Jacobi–Davidson method for calculating eigenvalues in low dimensional structures using eight band k· p model
J Andrzejewski
Journal of Computational Physics 249, 22-35, 2013
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