| Optimal estimation of Schottky diode parameters using a novel optimization algorithm: Equilibrium optimizer A Rabehi, B Nail, H Helal, A Douara, A Ziane, M Amrani, B Akkal, ... Superlattices and Microstructures 146, 106665, 2020 | 35 | 2020 |
| Comparative study of ionic bombardment and heat treatment on the electrical behavior of Au/GaN/n-GaAs Schottky diodes H Helal, Z Benamara, AH Kacha, M Amrani, A Rabehi, B Akkal, G Monier, ... Superlattices and Microstructures 135, 106276, 2019 | 17 | 2019 |
| A study of current‐voltage and capacitance‐voltage characteristics of Au/n‐GaAs and Au/GaN/n‐GaAs Schottky diodes in wide temperature range H Helal, Z Benamara, MB Arbia, A Khettou, A Rabehi, AH Kacha, ... International Journal of Numerical Modelling: Electronic Networks, Devices …, 2020 | 15 | 2020 |
| Simulation and optimization of InGaN Schottky solar cells to enhance the interface quality A Khettou, I Zeydi, M Chellali, MB Arbia, S Mansouri, H Helal, H Maaref Superlattices and Microstructures 142, 106539, 2020 | 13 | 2020 |
| A new model of thermionic emission mechanism for non-ideal Schottky contacts and a method of extracting electrical parameters H Helal, Z Benamara, BG Pérez, AH Kacha, A Rabehi, MA Wederni, ... The European Physical Journal Plus 135 (11), 895, 2020 | 8 | 2020 |
| Optimal estimation of Schottky diode parameters using advanced swarm intelligence algorithms A Rabehi, B Nail, H Helal, A Douara, A Ziane, M Amrani, B Akkal, ... Semiconductors 54, 1398-1405, 2020 | 6 | 2020 |
| Electrical behavior of n‐GaAs based Schottky diode for different contacts: Temperature dependence of c urrent‐voltage H Helal, Z Benamara, MB Arbia, A Rabehi, AC Chaouche, H Maaref International Journal of Numerical Modelling: Electronic Networks, Devices …, 2021 | 4 | 2021 |
| Investigation of 1.9 μm GINA Simulated as Intrinsic Layer in a GaAs Homojunction: From 25% Towards 32.4% Conversion Yield MB Arbia, H Helal, F Saidi, H Maaref Journal of Electronic Materials 49 (11), 6308-6316, 2020 | 4 | 2020 |
| A new approach to studying the electrical behavior and the inhomogeneities of the Schottky barrier height H Helal, Z Benamara, E Comini, AH Kacha, A Rabehi, K Khirouni, ... The European Physical Journal Plus 137 (4), 450, 2022 | 3 | 2022 |
| Conduction mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky contacts in a wide temperature range H Helal, Z Benamara, MA Wederni, S Mourad, K Khirouni, G Monier, ... Materials 14 (20), 5909, 2021 | 2 | 2021 |
| Current–Voltage, Capacitance–Voltage–Temperature, and DLTS Studies of Ni|6H-SiC Schottky Diode A Rabehi, B Akkal, M Amrani, S Tizi, Z Benamara, H Helal, A Douara, ... Semiconductors 55 (4), 446-454, 2021 | 2 | 2021 |
| Modeling the Abnormal Behavior of the 6H-SiC Schottky Diode Using Lambert W Function R Abdelaziz, R Abdelhalim, D Abdelmalek, H Hicham, B Oussama, ... Sumy State University, 2022 | 1 | 2022 |
| Nanostructured Materials for Enhanced Performance of Solid Oxide Fuel Cells: A Comprehensive Review H Helal, M Ahrouch, A Rabehi, D Zappa, E Comini Crystals 14 (4), 306, 2024 | | 2024 |
| Accurate parameter estimation of Au/GaN/GaAs schottky diode model using grey wolf optimization A Rabehi, A Douara, A Rabehi, H Helal, AM Younsi, M Amrani, IE Abbas, ... Revista Mexicana de Física 70 (2 Mar-Apr), 021004 1–8-021004 1–8, 2024 | | 2024 |
| Recent Advances in Low-Dimensional Metal Oxides via Sol-Gel Method for Gas Detection M Ben Arbia, H Helal, E Comini Nanomaterials 14 (4), 359, 2024 | | 2024 |
| Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts S Benykrelef, S Mansouri, H Helal, A Rabehi, A Joti, Z Benamara The Journal of Engineering and Exact Sciences 9 (4), 15855-01e, 2023 | | 2023 |
| Electrical characterization of Au/GaN/n-GaAs Schottky nano-structures in a wide temperature range H Helal, Z Benamara, AH Kacha, K Kirouni, G Monier, CR Goumet, S Tizi, ... La deuxième édition de la Conférence Internationale sur les Sciences et …, 2022 | | 2022 |
| Elaborations et caractérisations de nanostructures réalisées sur des matériaux III/V nitrurés H HELAL | | 2021 |
| Study of Temperature-dependent Conduction Mechanisms in Au/0.8 nm-GaN/n-GaAs Schottky Diode H Helal, Z Benamara, MA Wederni, S Mourad, K Khirouni, G Monier, ... | | 2021 |
| Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range. Materials 2021, 14, 5909 H Helal, Z Benamara, MA Wederni, S Mourad, K Khirouni, G Monier, ... s Note: MDPI stays neutral with regard to jurisdictional claims in published …, 2021 | | 2021 |
