A kinetic model for the oxidation of silicon germanium alloys MA Rabie, YM Haddara, J Carette Journal of applied physics 98 (7), 2005 | 58 | 2005 |
TSV residual Cu step height analysis by white light interferometry for 3D integration D Smith, S Singh, Y Ramnath, M Rabie, D Zhang, L England 2015 IEEE 65th Electronic Components and Technology Conference (ECTC), 578-584, 2015 | 24 | 2015 |
Process Development and Optimization for 3High Aspect Ratio Via-Middle Through-Silicon Vias at Wafer Level D Zhang, D Smith, G Kumarapuram, R Giridharan, S Kakita, MA Rabie, ... IEEE Transactions on Semiconductor Manufacturing 28 (4), 454-460, 2015 | 19 | 2015 |
Novel stress-free keep out zone process development for via middle TSV in 20nm planar CMOS technology MA Rabie, CS Premachandran, R Ranjan, MI Natarajan, SF Yap, D Smith, ... IEEE International Interconnect Technology Conference, 203-206, 2014 | 17 | 2014 |
Successful void free gap fill of 3µm, high AR via middle, Through Silicon Vias at wafer level S Thangaraju, L England, M Rabie, D Zhang, G Kumarapuram, ... 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014 …, 2014 | 14 | 2014 |
Structure and method of cancelling tsv-induced substrate stress MA Rabie, P Chirayarikathuveedu, MI Natarajan US Patent App. 14/176,178, 2015 | 13 | 2015 |
Innovative Design of Crackstop Wall for 14nm Technology Node and Beyond M Rabie, NA Polomoff, MK Hassan, VL Calero-DdelC, D Degraw, ... 2018 IEEE 68th Electronic Components and Technology Conference (ECTC), 460-466, 2018 | 7 | 2018 |
Thermal characterization and TCAD modeling of a power amplifier in 45RFSOI for 5G mmWave applications P Paliwoda, MA Rabie, OD Restrepo, EC Silva, E Kaltalioglu, F Guarin, ... 2020 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2020 | 6 | 2020 |
Optimization of Through Crackstop via using finite element modeling MA Rabie, N Polomoff 2017 18th International Conference on Thermal, Mechanical and Multi-Physics …, 2017 | 5 | 2017 |
Cobalt germanide contacts: growth reaction, phase formation models, and electrical properties MA Rabie, S Mirza, Y Hu, YM Haddara Journal of Materials Science: Materials in Electronics 30, 10031-10063, 2019 | 3 | 2019 |
Crack trapping in semiconductor device structures NA Polomoff, M RABIE, VLC diaz del castillo, D Degraw, M Hecker US Patent US10068859B1, 2018 | 3 | 2018 |
First phase to form during cobalt germanidation MA Rabie, S Mirza, V Jarvis, YM Haddara Journal of Applied Physics 121 (14), 2017 | 3 | 2017 |
Effect of plasticity of copper in through silicon vias on mobility of carriers in active device areas MA Rabie 2013 Saudi International Electronics, Communications and Photonics …, 2013 | 3 | 2013 |
Ab Initio Electrical, Thermal Conductance, and Lorenz Numbers for Advanced CMOS Interfaces OD Restrepo, D Singh, M Rabie, P Paliwoda, EC Silva IEEE Transactions on Electron Devices 69 (5), 2579-2584, 2022 | 2 | 2022 |
Optimizing die corner and optical groove corner crackstop support structures for mitigating dicing and CPI risks MA Rabie, NA Polomoff, S Pozder 2021 IEEE 71st Electronic Components and Technology Conference (ECTC), 1391-1398, 2021 | 2 | 2021 |
The Influence of Layer thickness on Crackstops' Mechanical Strength and Robustness NA Polomoff, MA Rabie 2021 IEEE 71st Electronic Components and Technology Conference (ECTC), 62-71, 2021 | 1 | 2021 |
BEoL Layout Design Considerations to Mitigate CPI Risk MA Rabie, T Raman, F Mirza, NA Polomoff, D Faruqui, S Pozder, ... 2018 IEEE International Interconnect Technology Conference (IITC), 64-66, 2018 | 1 | 2018 |
Thick photosensitive polyimide film side wall angle variability and scum improvement for IC packaging stress control SS Mehta, M Yeung, F Mirza, T Raman, T Longenbach, J Morgan, ... Advances in Patterning Materials and Processes XXXV 10586, 98-110, 2018 | 1 | 2018 |
Method to mitigate chip package interaction risk on die corner using reinforcing tiles M Rabie US Patent App. 15/193,700, 2017 | 1 | 2017 |
Mitigating transient tsv-induced ic substrate noise and resulting devices M Rabie, P Chirayarikathuveedu US Patent App. 14/812,340, 2017 | 1 | 2017 |