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Scott D  Sifferman
Scott D Sifferman
Chief Scientist, Systems & Processes Engineering Corporation (SPEC)
Verified email at utexas.edu
Title
Cited by
Cited by
Year
Highly strained mid-infrared type-I diode lasers on GaSb
SD Sifferman, HP Nair, R Salas, NT Sheehan, SJ Maddox, AM Crook, ...
IEEE Journal of Selected Topics in Quantum Electronics 21 (6), 1-10, 2015
422015
Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation
R Salas, S Guchhait, SD Sifferman, KM McNicholas, VD Dasika, ...
Applied Physics Letters 106 (8), 2015
282015
1E-3 Tomographic Photoacoustic Imaging Using Capacitive Micromachined Ultrasonic Transducer (CMUT) Technology
S Vaithilingam, IO Wygant, S Sifferman, X Zhuang, Y Furukawa, ...
Ultrasonics Symposium, 2006. IEEE, 397-400, 2006
142006
Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation
R Salas, S Guchhait, KM McNicholas, SD Sifferman, VD Dasika, D Jung, ...
Applied Physics Letters 108 (18), 2016
112016
Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation
R Salas, S Guchhait, SD Sifferman, KM McNicholas, VD Dasika, D Jung, ...
APL Materials 5 (9), 2017
82017
Room-temperature photoluminescence and electroluminescence of 1.3-μm-range BGaInAs quantum wells on GaAs substrates
RH El-Jaroudi, KM McNicholas, AF Briggs, SD Sifferman, L Nordin, ...
Applied Physics Letters 117 (2), 021102, 2020
72020
Strain dependence of Auger recombination in 3 μm GaInAsSb/GaSb type-I active regions
KJ Underwood, AF Briggs, SD Sifferman, VB Verma, NS Sirica, ...
Applied Physics Letters 116 (26), 2020
42020
BGaAs/GaP Heteroepitaxy for Strain-Free Luminescent Layers on Si
KM McNicholas, DJ Ironside, R El-Jaroudi, H Maczko, G Cossio, ...
60th Electronic Materials Conf. (EMC), 2018
32018
Mid-infrared type-I diode laser design using molecular beam epitaxy
SD Sifferman
The University of Texas at Austin, 2020
12020
Dilute-Bismide Alloys for GaSb-based Mid-Infrared Semiconductor Lasers
SD Sifferman, M Motyka, AF Briggs, KJ Underwood, KM McNicholas, ...
2018 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2018
12018
Auger recombination in mid-infrared active regions
KJ Underwood, AF Briggs, SD Sifferman, SR Bank, JT Gopinath
CLEO: Applications and Technology, JTh2A. 85, 2018
12018
Plasma Windowing for Hypersonic Radio Communications
SD Sifferman, B Sallee, RE Noster
2023 IEEE MTT-S International Microwave Symposium (IMS), 2023
2023
Building RF Mixed Signal Boards using the Cadence Unified Library
SD Sifferman, J Cady
CadenceLIVE Silicon Valley 2023, 2023
2023
Broadband PDK for µW SIP Design on Organic Substrate, Using Cadence AWR Microwave Office
SD Sifferman, F Raffaeli, J Reimund
CadenceLIVE Silicon Valley 2022, 2022
2022
Comparison of Auger Recombination Across Material Systems with Externally Applied Biaxial Strain
AF Briggs, KJ Underwood, SD Sifferman, JT Gopinath, SR Bank
62nd Electronic Materials Conference (EMC), 2020
2020
Highly strained, high indium content III-V materials toward 4-micron type-I emitters
SD Sifferman, AF Briggs, SJ Maddox, HP Nair, SR Bank
62th Electronic Materials Conf. (EMC), 2020
2020
Auger Recombination in Strained Mid-Infrared Quantum Wells
KJ Underwood, AF Briggs, SD Sifferman, VB Verma, NS Sirica, ...
2020 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2020
2020
Externally Applied Strain on GaSb-Based GaInAsSb Quantum Well Membranes
AF Briggs, SD Sifferman, KJ Underwood, JT Gopinath, SR Bank
61st Electronic Materials Conference (EMC), 2019
2019
III-V Digital Alloys for Mid-IR Photodetectors
AK Rockwell, Y Yuan, SD March, AH Jones, M Woodson, M Ren, ...
60th Electronic Materials Conf. (EMC), 2018
2018
Strain Engineering of Nanomembranes with Amorphous Silicon
R El-Jaroudi, NT Sheehan, KM McNicholas, DJ Ironside, AF Briggs, ...
60th Electronic Materials Conf. (EMC), 2018
2018
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