| Luminescence and stimulated emission from GaN on silicon substrates heterostructures GP Yablonskii, EV Lutsenko, VN Pavlovskii, VZ Zubialevich, AL Gurskii, ... physica status solidi (a) 192 (1), 54-59, 2002 | 46 | 2002 |
| Quantum defect approach for the effect of electron–phonon coupling on impurity recombination in semiconductors AL Gurskii, SV Voitikov Solid state communications 112 (6), 339-343, 1999 | 34 | 1999 |
| Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450–470 nm GP Yablonskii, EV Lutsenko, VN Pavlovskii, IP Marko, AL Gurskii, ... Applied Physics Letters 79 (13), 1953-1955, 2001 | 26 | 2001 |
| Lasing in Cd (Zn) Se/ZnMgSSe heterostructures pumped by nitrogen and InGaN/GaN lasers IV Sedova, SV Sorokin, AA Toropov, VA Kaigorodov, SV Ivanov, ... Semiconductors 38, 1099-1104, 2004 | 22 | 2004 |
| Luminescence of ZnO monocrystals at excitation by streamer discharges and laser radiation AA Gladyshchuk, AL Gurskii, VA Nikitenko, VV Parashchuk, ... Journal of luminescence 42 (1), 49-55, 1988 | 22 | 1988 |
| Growth, Stimulated Emission, Photo‐and Electroluminescence of InGaN/GaN EL‐Test Heterostructures EV Lutsenko, VN Pavlovskii, VZ Zubialevich, AI Stognij, AL Gurskii, ... physica status solidi (c), 272-275, 2003 | 21 | 2003 |
| Low-temperature growth and nitrogen doping of ZnSe using diethylzinc and ditertiarybutylselenide in a plasma-stimulated low-pressure metalorganic vapour phase epitaxy system W Taudt, B Wachtendorf, R Beccard, A Wahid, M Heuken, AL Gurskii, ... Journal of crystal growth 145 (1-4), 582-588, 1994 | 18 | 1994 |
| Influence of thermal annealing on photoluminescence and structural properties of N, N′-diphenyl-N, N′-bis (1-naphthylphenyl)-1, 1′-biphenyl-4, 4′-diamine (α-NPD) organic … KA Osipov, VN Pavlovskii, EV Lutsenko, AL Gurskii, GP Yablonskii, ... Thin Solid Films 515 (11), 4834-4837, 2007 | 17 | 2007 |
| Luminescence and lasing in InGaN∕ GaN multiple quantum well heterostructures grown at different temperatures GP Yablonskii, VN Pavlovskii, EV Lutsenko, VZ Zubialevich, AL Gurskii, ... Applied physics letters 85 (22), 5158-5160, 2004 | 17 | 2004 |
| Effects of electron–phonon interaction and chemical shift on near-band-edge recombination in GaN M Germain, E Kartheuser, AL Gurskii, EV Lutsenko, IP Marko, ... Journal of applied physics 91 (12), 9827-9834, 2002 | 17 | 2002 |
| Optical properties and recombination mechanisms in GaN and GaN: Mg grown by metalorganic vapor phase epitaxy GP Yablonskii, AL Gurskii, EV Lutsenko, IP Marko, B Schineller, A Guttzeit, ... Journal of electronic materials 27, 222-228, 1998 | 13 | 1998 |
| Laser threshold and optical gain of blue optically pumped InGaN/GaN multiple quantum wells (MQW) grown on Si EV Lutsenko, AV Danilchyk, NP Tarasuk, AV Andryieuski, VN Pavlovskii, ... physica status solidi c 5 (6), 2263-2266, 2008 | 12 | 2008 |
| Nanocathodoluminescence reveals mitigation of the stark shift in InGaN quantum wells by Si doping GP Yablonskii, AL Gurskii, VN Pavlovskii, EV Lutsenko, VZ Zubialevich, ... J. Cryst. Growth 275, e1733-e1738, 2005 | 12 | 2005 |
| Temperature and excitation dependent photoluminescence of undoped and nitrogen‐doped ZnSe epilayers AL Gurskii, AN Gavrilenko, EV Lutsenko, GP Yablonskii, W Taudt, ... physica status solidi (b) 193 (1), 257-267, 1996 | 12* | 1996 |
| High-efficiency electron-beam-pumped semiconductor laser emitters AL Gurskii, EV Lutsenko, AI Mitcovets, GP Yablonskii Wide-Band-Gap Semiconductors, 505-507, 1993 | 11 | 1993 |
| High-temperature optically pumped lasing in ZnMgSSe/ZnSe heterostructures grown by metalorganic vapor phase epitaxy AL Gurskii, IP Marko, EV Lutsenko, GP Yablonskii, H Kalisch, H Hamadeh, ... Applied Physics Letters 73 (11), 1496-1498, 1998 | 10 | 1998 |
| Determination of carrier diffusion length in MOCVD‐grown GaN epilayers on sapphire by optical techniques EV Lutsenko, AL Gurskii, VN Pavlovskii, GP Yablonskii, T Malinauskas, ... physica status solidi c 3 (6), 1935-1939, 2006 | 9 | 2006 |
| Photoluminescence, stimulated emission and carrier dynamics in GaN/Si heterostructures studied by time‐resolved four‐wave mixing technique AL Gurskii, EV Lutsenko, VN Pavlovskii, VZ Zubialevich, GP Yablonskii, ... physica status solidi (c) 2 (7), 2724-2727, 2005 | 9 | 2005 |
| Integration of Cd (Zn) Se/ZnSe and GaN‐based lasers for optoelectronic applications in a green spectral range IV Sedova, SV Sorokin, AA Toropov, VA Kaygorodov, SV Ivanov, ... physica status solidi (c) 1 (4), 1030-1033, 2004 | 9 | 2004 |
| Free-exciton spectra in heteroepitaxial ZnSe/GaAs layers AL Gurskii, YP Rakovich, EV Lutsenko, AA Gladyshchuk, GP Yablonskii, ... Physical Review B 61 (15), 10314, 2000 | 9 | 2000 |
Lutsenko EvgeniiAssistant ProfessorVerified email at ifanbel.bas-net.by
