| Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O LG Gosset, JF Damlencourt, O Renault, D Rouchon, P Holliger, ... Journal of non-crystalline solids 303 (1), 17-23, 2002 | 164 | 2002 |
| Growth of SiO2 on SiC by dry thermal oxidation: mechanisms I Vickridge, J Ganem, Y Hoshino, I Trimaille Journal of Physics D: Applied Physics 40 (20), 6254, 2007 | 97 | 2007 |
| Use of 18O isotopic labelling to study thermal dry oxidation of silicon as a function of temperature and pressure I Trimaille, S Rigo Applied Surface Science 39 (1-4), 65-80, 1989 | 83 | 1989 |
| Limiting step involved in the thermal growth of silicon oxide films on silicon carbide IC Vickridge, I Trimaille, JJ Ganem, S Rigo, C Radtke, IJR Baumvol, ... Physical review letters 89 (25), 256102, 2002 | 52 | 2002 |
| Mechanisms of thermal nitridation of silicon IJR Baumvol, FC Stedile, JJ Ganem, S Rigo, I Trimaille Journal of the Electrochemical Society 142 (4), 1205-1214, 1995 | 52 | 1995 |
| Incorporation of oxygen and nitrogen in ultrathin films of annealed in NO IJR Baumvol, JJ Ganem, LG Gosset, I Trimaille, S Rigo Applied physics letters 72 (23), 2999-3001, 1998 | 40 | 1998 |
| Diffusion of near surface defects during the thermal oxidation of silicon JJ Ganem, I Trimaille, P André, S Rigo, FC Stedile, IJR Baumvol Journal of applied physics 81 (12), 8109-8111, 1997 | 40 | 1997 |
| Dry oxidation mechanisms of thin dielectric films formed under N2O using isotopic tracing methods JJ Ganem, S Rigo, I Trimaille, IJR Baumvol, FC Stedile Applied physics letters 68 (17), 2366-2368, 1996 | 40 | 1996 |
| Thermal nitridation of SiO2 films in ammonia: The role of hydrogen IJR Baumvol, FC Stedile, JJ Ganem, I Trimaille, S Rigo Journal of The Electrochemical Society 143 (4), 1426-1434, 1996 | 33 | 1996 |
| A study of the initial stages of the oxidation of silicon using 18O2 and RTP JJ Ganem, G Battistig, S Rigo, I Trimaille Applied surface science 65, 647-653, 1993 | 32 | 1993 |
| Study of thin hafnium oxides deposited by atomic layer deposition JJ Ganem, I Trimaille, IC Vickridge, D Blin, F Martin Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004 | 26 | 2004 |
| Thermal Nitridation of SiO2 Films in Ammonia Isotopic Tracing of Nitrogen and Oxygen in the Initial Stages IJR Baumvol, FC Stedile, JJ Ganem, I Trimaille, S Rigo Journal of The Electrochemical Society 143 (9), 2938-2945, 1996 | 26 | 1996 |
| Oxygen isotopic exchange occurring during dry thermal oxidation of 6H SiC IC Vickridge, D Tromson, I Trimaille, JJ Ganem, E Szilagyi, G Battistig Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002 | 25 | 2002 |
| Formation of modified interfaces with intrinsic low defect concentrations LG Gosset, JJ Ganem, HJ Von Bardeleben, S Rigo, I Trimaille, JL Cantin, ... Journal of applied physics 85 (7), 3661-3665, 1999 | 25 | 1999 |
| Nitrogen transport during rapid thermal growth of silicon oxynitride films in N2O IJR Baumvol, FC Stedile, JJ Ganem, I Trimaille, S Rigo Applied physics letters 69 (16), 2385-2387, 1996 | 25 | 1996 |
| Effects of sputter deposition parameters and post-deposition annealing on the electrical characteristics of LaAlO3 dielectric films on Si V Edon, MC Hugon, B Agius, L Miotti, C Radtke, F Tatsch, JJ Ganem, ... Applied Physics A 83 (2), 289-293, 2006 | 24 | 2006 |
| Isotopic tracing during rapid thermal growth of silicon oxynitride films on Si in and IJR Baumvol, FC Stedile, JJ Ganem, I Trimaille, S Rigo Applied physics letters 70 (15), 2007-2009, 1997 | 23 | 1997 |
| Time dependence of the oxygen exchange at the interface during dry thermal oxidation of silicon T Åkermark, LG Gosset, JJ Ganem, I Trimaille, I Vickridge, S Rigo Journal of applied physics 86 (2), 1153-1155, 1999 | 20 | 1999 |
| IBA study of the growth mechanisms of very thin silicon oxide films: the effect of wafer cleaning FC Stedile, IJR Baumvol, JJ Ganem, S Rigo, I Trimaille, G Battistig, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1994 | 19 | 1994 |
| Thermal oxidation of 6H-SiC studied by oxygen isotopic tracing and narrow nuclear resonance profiling I Trimaille, JJ Ganem, IC Vickridge, S Rigo, G Battistig, E Szilagyi, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004 | 18 | 2004 |
