Joseph Shor
Joseph Shor
Verified email at
Cited by
Cited by
Direct observation of porous SiC formed by anodization in HF
JS Shor, I Grimberg, BZ Weiss, AD Kurtz
Applied physics letters 62 (22), 2836-2838, 1993
Characterization of n-type beta-SiC as a piezoresistor
JS Shor, D Goldstein, AD Kurtz
IEEE transactions on electron devices 40 (6), 1093-1099, 1993
A fully integrated multi-CPU, GPU and memory controller 32nm processor
M Yuffe, E Knoll, M Mehalel, J Shor, T Kurts
2011 IEEE International Solid-State Circuits Conference, 264-266, 2011
A 512 Mb NROM flash data storage memory with 8 MB/s data rate
E Maayan, R Dvir, J Shor, Y Polansky, Y Sofer, I Bloom, D Avni, B Eitan, ...
2002 IEEE International Solid-State Circuits Conference. Digest of Technical …, 2002
Photoelectrochemical etching of 6 H‐SiC
JS Shor, AD Kurtz
Journal of the Electrochemical Society 141 (3), 778, 1994
Characterization of nanocrystallites in porous p‐type 6H‐SiC
JS Shor, L Bemis, AD Kurtz, I Grimberg, BZ Weiss, MF MacMillian, ...
Journal of Applied Physics 76 (7), 4045-4049, 1994
Characterization of monolithic n-type 6H-SiC piezoresistive sensing elements
JS Shor, L Bemis, AD Kurtz
IEEE Transactions on electron devices 41 (5), 661-665, 1994
Laser‐assisted photoelectrochemical etching of n‐type beta‐SiC
JS Shor, XG Zhang, RM Osgood
Journal of The Electrochemical Society 139 (4), 1213, 1992
Compact BJT-based thermal sensor for processor applications in a 14 nm tri-gate CMOS process
T Oshita, J Shor, DE Duarte, A Kornfeld, D Zilberman
IEEE Journal of Solid-State Circuits 50 (3), 799-807, 2015
Porous silicon carbide (SIC) semiconductor device
JS Shor, AD Kurtz
US Patent 5,569,932, 1996
Miniaturized BJT-based thermal sensor for microprocessors in 32-and 22-nm technologies
JS Shor, K Luria
IEEE journal of solid-state circuits 48 (11), 2860-2867, 2013
Charge pump stage with body effect minimization
JS Shor, E Maayan, Y Polansky
US Patent 6,677,805, 2004
Photoelectrochemical conductivity selective etch stops for SiC
JS Shor, RM Osgood, AD Kurtz
Applied physics letters 60 (8), 1001-1003, 1992
Charge pump with constant boosted output voltage
J Shor, Y Sofer, E Maayan
US Patent 6,577,514, 2003
Ratiometric BJT-based thermal sensor in 32nm and 22nm technologies
J Shor, K Luria, D Zilberman
2012 IEEE International Solid-State Circuits Conference, 210-212, 2012
Stack element circuit
JS Shor, E Maayan
US Patent 6,791,396, 2004
A method to improve reliability in a 65-nm SRAM PUF array
Y Shifman, A Miller, O Keren, Y Weizmann, J Shor
IEEE Solid-State Circuits Letters 1 (6), 138-141, 2018
Broad‐Area Photoelectrochemical Etching of n‐Type Beta‐SiC
JS Shor, RM Osgood
Journal of the Electrochemical Society 140 (8), L123, 1993
High temperature transducers and methods of fabricating the same employing silicon carbide
AD Kurtz, D Goldstein, JS Shor
US Patent 5,165,283, 1992
Method and circuit for operating a memory cell using a single charge pump
JS Shor, A Harush, S Eisen
US Patent 6,842,383, 2005
The system can't perform the operation now. Try again later.
Articles 1–20