Andre Venter
Andre Venter
Professor of Physics, Nelson Mandela University
Verified email at mandela.ac.za
Title
Cited by
Cited by
Year
Optical and electrical properties of NiO for possible dielectric applications
A Venter, JR Botha
South African Journal of Science 107 (1-2), 1-6, 2011
632011
Treatment for GaSb surfaces using a sulphur blended (NH4) 2S/(NH4) 2SO4 solution
DM Murape, N Eassa, JH Neethling, R Betz, E Coetsee, HC Swart, ...
Applied surface science 258 (18), 6753-6758, 2012
252012
Electrical properties of undoped and doped MOVPE-grown InAsSb
T Krug, L Botha, P Shamba, TR Baisitse, A Venter, JAA Engelbrecht, ...
Journal of crystal growth 298, 163-167, 2007
162007
Optical and electrical characteristics of ZnO/Si heterojunction
ZN Urgessa, SR Dobson, K Talla, DM Murape, A Venter, JR Botha
Physica B: Condensed Matter 439, 149-152, 2014
132014
The effect of filament temperature on the growth of diamond using hot-filament chemical vapour deposition
A Venter, JH Neethling
Diamond and Related Materials 3 (1-2), 168-172, 1994
131994
Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment
C Nyamhere, JR Botha, A Venter
Physica B: Condensed Matter 406 (11), 2273-2276, 2011
102011
Growth and electrical characterization of Zn-doped InAs and InAs1− xSbx
A Venter, P Shamba, L Botha, JR Botha
Thin solid films 517 (15), 4468-4473, 2009
102009
Growth of ZnS-coated ZnO nanorod arrays on (1 0 0) silicon substrate by two-step chemical synthesis
H Kumarakuru, ZN Urgessa, EJ Olivier, JR Botha, A Venter, JH Neethling
Journal of alloys and compounds 612, 154-162, 2014
72014
Inductively coupled plasma induced deep levels in epitaxial n-GaAs
FD Auret, PJJ van Rensburg, WE Meyer, SMM Coelho, V Kolkovsky, ...
Physica B: Condensed Matter 407 (10), 1497-1500, 2012
72012
Transport characteristics of n-ZnO/p-Si heterojunction as determined from temperature dependent current–voltage measurements
SRT Djiokap, ZN Urgessa, CM Mbulanga, A Venter, JR Botha
Physica B: Condensed Matter 480, 68-71, 2016
62016
Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current–voltage measurements
A Venter, DM Murape, JR Botha, FD Auret
Thin Solid Films 574, 32-37, 2015
62015
Characterization of the E(0.31) defect introduced in bulk n-Ge by H or He plasma exposure
C Nyamhere, A Venter, FD Auret, SMM Coelho, DM Murape
Journal of Applied Physics 111 (4), 044511, 2012
62012
Chalcogen based treatment of InAs with [(NH4) 2S/(NH4) 2SO4]
N Eassa, DM Murape, JH Neethling, R Betz, E Coetsee, HC Swart, ...
Surface science 605 (11-12), 994-999, 2011
62011
Admittance spectroscopy or deep level transient spectroscopy: A contrasting juxtaposition
J Bollmann, A Venter
Physica B: Condensed Matter 535, 237-241, 2018
52018
Improved GaSb surfaces using a (NH4) 2S/(NH4) 2S04 solution
DM Murape, N Eassa, C Nyamhere, JH Neethling, R Betz, E Coetsee, ...
Physica B: Condensed Matter 407 (10), 1675-1678, 2012
52012
Ar plasma induced deep levels in epitaxial n-GaAs
A Venter, C Nyamhere, JR Botha, FD Auret, PJ Janse van Rensburg, ...
Journal of Applied Physics 111 (1), 013703, 2012
52012
Ar plasma induced deep levels in epitaxial n-GaAs
A Venter, C Nyamhere, JR Botha, FD Auret, PJ Janse van Rensburg, ...
Journal of Applied Physics 111 (1), 013703, 2012
52012
Comprehensive study of ZnO nanostructures grown using chemical bath deposition: from growth to application
ZN Urgessa, DM Murape, OS Oluwafemi, A Venter, M Wagner, JR Botha
Smart Nano-Micro Materials and Devices 8204, 82041Z, 2011
52011
Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation
C Nyamhere, AGM Das, FD Auret, A Chawanda, CA Pineda-Vargas, ...
Physica B: Condensed Matter 406 (15-16), 3056-3059, 2011
52011
dc-Hydrogen plasma induced defects in bulk n-Ge
C Nyamhere, A Venter, DM Murape, FD Auret, SMM Coelho, JR Botha
Physica B: Condensed Matter 407 (15), 2935-2938, 2012
42012
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