Follow
P Ruden
Title
Cited by
Cited by
Year
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
M Farahmand, C Garetto, E Bellotti, KF Brennan, M Goano, E Ghillino, ...
IEEE Transactions on electron devices 48 (3), 535-542, 2001
5872001
Electron transport characteristics of GaN for high temperature device modeling
JD Albrecht, RP Wang, PP Ruden, M Farahmand, KF Brennan
Journal of Applied Physics 83 (9), 4777-4781, 1998
4411998
Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure
J Kolník, İH Oğuzman, KF Brennan, R Wang, PP Ruden, Y Wang
Journal of Applied Physics 78 (2), 1033-1038, 1995
4201995
Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN
IH Oğuzman, E Bellotti, KF Brennan, J Kolnı́k, R Wang, PP Ruden
Journal of Applied Physics 81 (12), 7827-7834, 1997
2621997
High field electron transport properties of bulk ZnO
JD Albrecht, PP Ruden, S Limpijumnong, WRL Lambrecht, KF Brennan
Journal of Applied Physics 86 (12), 6864-6867, 1999
2581999
Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy
JM Van Hove, R Hickman, JJ Klaassen, PP Chow, PP Ruden
Applied physics letters 70 (17), 2282-2284, 1997
2471997
Film and contact resistance in pentacene thin-film transistors: Dependence on film thickness, electrode geometry, and correlation with hole mobility
PV Pesavento, KP Puntambekar, CD Frisbie, JC McKeen, PP Ruden
Journal of applied physics 99 (9), 2006
2312006
Ensemble Monte Carlo study of electron transport in wurtzite InN
E Bellotti, BK Doshi, KF Brennan, JD Albrecht, PP Ruden
Journal of Applied Physics 85 (2), 916-923, 1999
2221999
Observation of tunable band gap and two-dimensional subbands in a novel GaAs superlattice
GH Döhler, H Künzel, D Olego, K Ploog, P Ruden, HJ Stolz, G Abstreiter
Physical Review Letters 47 (12), 864, 1981
2111981
Comparison of the mobility-carrier density relation in polymer and single-crystal organic transistors employing vacuum and liquid gate dielectrics
Y Xia, JH Cho, J Lee, PP Ruden, CD Frisbie
Advanced Materials 21 (21), 2174-2179, 2009
1702009
Electronic structure of semiconductors with doping superlattices
P Ruden, GH Döhler
Physical Review B 27 (6), 3538, 1983
1671983
Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN
J Kolnı́k, İH Oğuzman, KF Brennan, R Wang, PP Ruden
Journal of Applied Physics 81 (2), 726-733, 1997
1461997
Theory of spin injection into conjugated organic semiconductors
PP Ruden, DL Smith
Journal of applied physics 95 (9), 4898-4904, 2004
1382004
High-Mobility Transistors Based on Single Crystals of Isotopically Substituted Rubrene-d28
W Xie, KA McGarry, F Liu, Y Wu, PP Ruden, CJ Douglas, CD Frisbie
The Journal of Physical Chemistry C 117 (22), 11522-11529, 2013
1082013
Mobility anisotropy in monolayer black phosphorus due to scattering by charged impurities
Y Liu, T Low, PP Ruden
Physical Review B 93 (16), 165402, 2016
1072016
Investigation of bottom-contact organic field effect transistors by two-dimensional device modeling
T Li, PP Ruden, IH Campbell, DL Smith
Journal of Applied Physics 93 (7), 4017-4022, 2003
1062003
Quantum efficiency of ambipolar light-emitting polymer field-effect transistors
J Zaumseil, CR McNeill, M Bird, DL Smith, P Paul Ruden, M Roberts, ...
Journal of Applied Physics 103 (6), 2008
1042008
Channel formation in organic field-effect transistors
T Li, JW Balk, PP Ruden, IH Campbell, DL Smith
Journal of Applied Physics 91 (7), 4312-4318, 2002
1002002
Hole transport properties of bulk zinc‐blende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure
İH Oğuzman, J Kolník, KF Brennan, R Wang, TN Fang, PP Ruden
Journal of applied physics 80 (8), 4429-4436, 1996
1001996
Carrier localization on surfaces of organic semiconductors gated with electrolytes
Y Xia, W Xie, PP Ruden, CD Frisbie
Physical review letters 105 (3), 036802, 2010
932010
The system can't perform the operation now. Try again later.
Articles 1–20