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Ryo Ohshima
Ryo Ohshima
Verified email at kyoto-u.ac.jp
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Year
Strong evidence for d-electron spin transport at room temperature at a LaAlO3/SrTiO3 interface
R Ohshima, Y Ando, K Matsuzaki, T Susaki, M Weiler, S Klingler, H Huebl, ...
Nature Materials 16 (6), 609-614, 2017
552017
Transport and spin conversion of multicarriers in semimetal bismuth
H Emoto, Y Ando, G Eguchi, R Ohshima, E Shikoh, Y Fuseya, T Shinjo, ...
Physical Review B 93 (17), 174428, 2016
372016
Quantitative investigation of the inverse Rashba-Edelstein effect in Bi/Ag and Ag/Bi on YIG
M Matsushima, Y Ando, S Dushenko, R Ohshima, R Kumamoto, T Shinjo, ...
Applied Physics Letters 110 (7), 072404, 2017
282017
Observation of spin-charge conversion in chemical-vapor-deposition-grown single-layer graphene
R Ohshima, A Sakai, Y Ando, T Shinjo, K Kawahara, H Ago, M Shiraishi
Applied Physics Letters 105 (16), 162410, 2014
272014
Giant spin Hall angle in the Heusler alloy Weyl ferromagnet
L Leiva, S Granville, Y Zhang, S Dushenko, E Shigematsu, T Shinjo, ...
Physical Review B 103 (4), L041114, 2021
172021
Significant reduction in spin pumping efficiency in a platinum/yttrium iron garnet bilayer at low temperature
E Shigematsu, Y Ando, R Ohshima, S Dushenko, Y Higuchi, T Shinjo, ...
Applied Physics Express 9 (5), 053002, 2016
172016
Note: Derivative divide, a method for the analysis of broadband ferromagnetic resonance in the frequency domain
H Maier-Flaig, STB Goennenwein, R Ohshima, M Shiraishi, R Gross, ...
Review of Scientific Instruments 89 (7), 076101, 2018
162018
Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a nondegenerate Si-based spin valve
S Lee, F Rortais, R Ohshima, Y Ando, S Miwa, Y Suzuki, H Koike, ...
Physical Review B 99 (6), 064408, 2019
142019
Gate-Tunable Spin xor Operation in a Silicon-Based Device at Room Temperature
R Ishihara, Y Ando, S Lee, R Ohshima, M Goto, S Miwa, Y Suzuki, ...
Physical Review Applied 13 (4), 044010, 2020
112020
Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
S Gupta, F Rortais, R Ohshima, Y Ando, T Endo, Y Miyata, M Shiraishi
Scientific reports 9 (1), 1-7, 2019
72019
Temperature evolution of electromotive force from Pt on yttrium-iron-garnet under ferromagnetic resonance
R Ohshima, H Emoto, T Shinjo, Y Ando, M Shiraishi
Journal of Applied Physics 117 (17), 17D136, 2015
72015
Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves
H Koike, S Lee, R Ohshima, E Shigematsu, M Goto, S Miwa, Y Suzuki, ...
Applied Physics Express 13 (8), 083002, 2020
62020
Investigation of gating effect in Si spin MOSFET
S Lee, F Rortais, R Ohshima, Y Ando, M Goto, S Miwa, Y Suzuki, H Koike, ...
Applied Physics Letters 116 (2), 022403, 2020
62020
Spin-orbit coupling induced by bismuth doping in silicon thin films
F Rortais, S Lee, R Ohshima, S Dushenko, Y Ando, M Shiraishi
Applied Physics Letters 113 (12), 122408, 2018
62018
Approaching barrier-free contacts to monolayer MoS2 employing [Co/Pt] multilayer electrodes
S Gupta, F Rortais, R Ohshima, Y Ando, T Endo, Y Miyata, M Shiraishi
NPG Asia Materials 13 (1), 1-7, 2021
52021
In-plane spin-orbit torque magnetization switching and its detection using the spin rectification effect at subgigahertz frequencies
M Aoki, E Shigematsu, M Matsushima, R Ohshima, S Honda, T Shinjo, ...
Physical Review B 102 (17), 174442, 2020
52020
Stability of spin XOR gate operation in silicon based lateral spin device with large variations in spin transport parameters
R Ishihara, S Lee, Y Ando, R Ohshima, M Goto, S Miwa, Y Suzuki, ...
AIP Advances 9 (12), 125326, 2019
52019
Spin injection into silicon detected by broadband ferromagnetic resonance spectroscopy
R Ohshima, S Klingler, S Dushenko, Y Ando, M Weiler, H Huebl, T Shinjo, ...
Applied Physics Letters 110 (18), 182402, 2017
52017
Enhancement of spin signals by thermal annealing in silicon-based lateral spin valves
N Yamashita, S Lee, R Ohshima, E Shigematsu, H Koike, Y Suzuki, ...
AIP Advances 10 (9), 095021, 2020
22020
Sizable spin-transfer torque in the Bi/Ni80Fe20 bilayer film
M Matsushima, S Miwa, S Sakamoto, T Shinjo, R Ohshima, Y Ando, ...
Applied Physics Letters 117 (4), 042407, 2020
22020
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