| Design issues and considerations for low-cost 3-D TSV IC technology G Van der Plas, P Limaye, I Loi, A Mercha, H Oprins, C Torregiani, S Thijs, ... IEEE Journal of Solid-State Circuits 46 (1), 293-307, 2010 | 396 | 2010 |
| Vertical GAAFETs for the ultimate CMOS scaling D Yakimets, G Eneman, P Schuddinck, TH Bao, MG Bardon, P Raghavan, ... IEEE Transactions on Electron Devices 62 (5), 1433-1439, 2015 | 216 | 2015 |
| Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective V Subramanian, B Parvais, J Borremans, A Mercha, D Linten, P Wambacq, ... IEEE Transactions on Electron Devices 53 (12), 3071-3079, 2006 | 195 | 2006 |
| A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS D Linten, S Thijs, MI Natarajan, P Wambacq, W Jeamsaksiri, J Ramos, ... IEEE Journal of Solid-State Circuits 40 (7), 1434-1442, 2005 | 189 | 2005 |
| 3D stacked IC demonstration using a through silicon via first approach J Van Olmen, A Mercha, G Katti, C Huyghebaert, J Van Aelst, E Seppala, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 181 | 2008 |
| Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession T Chiarella, L Witters, A Mercha, C Kerner, M Rakowski, C Ortolland, ... Solid-State Electronics 54 (9), 855-860, 2010 | 160 | 2010 |
| "Linear kink effect" induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS A Mercha, JM Rafi, E Simoen, E Augendre, C Claeys Electron Devices, IEEE Transactions on 50 (7), 1675-1682, 2003 | 149 | 2003 |
| Comprehensive analysis of the impact of single and arrays of through silicon vias induced stress on high-k/metal gate CMOS performance A Mercha, G Van der Plas, V Moroz, I De Wolf, P Asimakopoulos, N Minas, ... 2010 International Electron Devices Meeting, 2.2. 1-2.2. 4, 2010 | 140 | 2010 |
| Low-frequency noise behavior of SiO2/HfO2 dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness E Simoen, A Mercha, L Pantisano, C Claeys, E Young Electron Devices, IEEE Transactions on 51 (5), 780-784, 2004 | 134* | 2004 |
| Multi-gate devices for the 32 nm technology node and beyond N Collaert, A De Keersgieter, A Dixit, I Ferain, LS Lai, D Lenoble, ... Solid-State Electronics 52 (9), 1291-1296, 2008 | 131 | 2008 |
| Low-power 5 GHz LNA and VCO in 90 nm RF CMOS D Linten, L Aspemyr, W Jeamsaksiri, J Ramos, A Mercha, S Jenei, S Thijs, ... 2004 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No …, 2004 | 124 | 2004 |
| Impact of fin width on digital and analog performances of n-FinFETs V Subramanian, A Mercha, B Parvais, J Loo, C Gustin, M Dehan, ... Solid-State Electronics 51 (4), 551-559, 2007 | 115 | 2007 |
| Impact of Wire Geometry on Interconnect RC and Circuit Delay I Ciofi, A Contino, PJ Roussel, R Baert, VH Vega-Gonzalez, K Croes, ... IEEE Transactions on Electron Devices 63 (6), 2488-2496, 2016 | 113 | 2016 |
| Self-heating on bulk FinFET from 14nm down to 7nm node D Jang, E Bury, R Ritzenthaler, MG Bardon, T Chiarella, K Miyaguchi, ... 2015 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2015 | 102 | 2015 |
| Experimental assessment of self-heating in SOI FinFETs AJ Scholten, GDJ Smit, RMT Pijper, LF Tiemeijer, HP Tuinhout, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 96 | 2009 |
| Double-gate FinFETs as a CMOS technology downscaling option: An RF perspective S Nuttinck, B Parvais, G Curatola, A Mercha IEEE Transactions on electron Devices 54 (2), 279-283, 2007 | 90 | 2007 |
| 3D stacked ICs using Cu TSVs and die to wafer hybrid collective bonding G Katti, A Mercha, J Van Olmen, C Huyghebaert, A Jourdain, M Stucchi, ... 2009 IEEE international electron devices meeting (IEDM), 1-4, 2009 | 84 | 2009 |
| Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs V Subramaniana, B Parvais, J Borremans, A Mercha, D Linten, ... IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005 | 80 | 2005 |
| Low-frequency noise in silicon-on-insulator devices and technologies E Simoen, A Mercha, C Claeys, N Lukyanchikova Solid-State Electronics 51 (1), 16-37, 2007 | 78 | 2007 |
| Dependence of FinFET RF performance on fin width D Lederer, B Parvais, A Mercha, N Collaert, M Jurczak, JP Raskin, ... Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated …, 2006 | 77 | 2006 |
C. ClaeysProfessor KU LeuvenVerified email at kuleuven.be
