| Origin of efficiency droop in GaN-based light-emitting diodes MH Kim, MF Schubert, Q Dai, JK Kim, EF Schubert, J Piprek, Y Park Applied Physics Letters 91 (18), 2007 | 1626 | 2007 |
| Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflection JQ Xi, MF Schubert, JK Kim, EF Schubert, M Chen, SY Lin, W Liu, ... Nature Photonics 1 (3), 176-179, 2007 | 1385 | 2007 |
| Polarization-matched GaInN∕ AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop MF Schubert, J Xu, JK Kim, EF Schubert, MH Kim, S Yoon, SM Lee, ... Applied physics letters 93 (4), 2008 | 602 | 2008 |
| Effect of dislocation density on efficiency droop in GaInN∕ GaN light-emitting diodes MF Schubert, S Chhajed, JK Kim, EF Schubert, DD Koleske, MH Crawford, ... Applied Physics Letters 91 (23), 2007 | 500 | 2007 |
| Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics S Chhajed, MF Schubert, JK Kim, EF Schubert Applied Physics Letters 93 (25), 2008 | 379 | 2008 |
| Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities Q Dai, MF Schubert, MH Kim, JK Kim, EF Schubert, DD Koleske, ... Applied Physics Letters 94 (11), 2009 | 356 | 2009 |
| Light‐extraction enhancement of GaInN light‐emitting diodes by graded‐refractive‐index Indium Tin Oxide anti‐reflection contact JK Kim, S Chhajed, MF Schubert, EF Schubert, AJ Fischer, MH Crawford, ... Advanced Materials 20 (4), 801-804, 2008 | 339 | 2008 |
| Design of multilayer antireflection coatings made from co-sputtered and low-refractive-index materials by genetic algorithm MF Schubert, FW Mont, S Chhajed, DJ Poxson, JK Kim, EF Schubert Optics Express 16 (8), 5290-5298, 2008 | 230 | 2008 |
| Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes J Xu, MF Schubert, AN Noemaun, D Zhu, JK Kim, EF Schubert, MH Kim, ... Applied Physics Letters 94 (1), 2009 | 204 | 2009 |
| High-refractive-index TiO2-nanoparticle-loaded encapsulants for light-emitting diodes FW Mont, JK Kim, MF Schubert, EF Schubert, RW Siegel Journal of Applied Physics 103 (8), 083120-083120-6, 2008 | 196 | 2008 |
| Distributed Bragg reflector consisting of high-and low-refractive-index thin film layers made of the same material MF Schubert, JQ Xi, JK Kim, EF Schubert Applied Physics Letters 90 (14), 141115-141115-3, 2007 | 171 | 2007 |
| Enhanced electron capture and symmetrized carrier distribution in GalnN light-emitting diodes having tailored barrier doping ZHU DI, AN NOEMAUN, MF SCHUBERT, J CHO, EF SCHUBERT, ... Applied physics letters 96 (12), 2010 | 168 | 2010 |
| Quantification of porosity and deposition rate of nanoporous films grown by oblique-angle deposition DJ Poxson, FW Mont, MF Schubert, JK Kim, EF Schubert Applied Physics Letters 93 (10), 2008 | 131 | 2008 |
| Improved color rendering and luminous efficacy in phosphor-converted white light-emitting diodes by use of dual-blue emitting active regions R Mirhosseini, MF Schubert, S Chhajed, J Cho, JK Kim, EF Schubert Optics Express 17 (13), 10806-10813, 2009 | 112 | 2009 |
| Refractive-index-matched indium–tin-oxide electrodes for liquid crystal displays X Yan, FW Mont, DJ Poxson, MF Schubert, JK Kim, J Cho, EF Schubert Japanese Journal of Applied Physics 48 (12R), 120203, 2009 | 105 | 2009 |
| Smart platooning of vehicles MF Schubert, JUL Jessen US Patent 9,940,840, 2018 | 99 | 2018 |
| Broadband omnidirectional antireflection coatings optimized by genetic algorithm DJ Poxson, MF Schubert, FW Mont, EF Schubert, JK Kim Optics Letters 34 (6), 728-730, 2009 | 96 | 2009 |
| On resonant optical excitation and carrier escape in GaInN/GaN quantum wells MF Schubert, J Xu, Q Dai, FW Mont, JK Kim, EF Schubert Applied Physics Letters 94 (8), 2009 | 85 | 2009 |
| Polarization of light emission by 460nm GaInN∕ GaN light-emitting diodes grown on (0001) oriented sapphire substrates MF Schubert, S Chhajed, JK Kim, E Fred Schubert, J Cho Applied Physics Letters 91 (5), 2007 | 84 | 2007 |
| Interband tunnel junctions for wurtzite III-nitride semiconductors based on heterointerface polarization charges MF Schubert Physical Review B 81 (3), 035303, 2010 | 63 | 2010 |
E. Fred Schubert, Future Chips Conste...Rensselaer Polytechnic InstituteVerified email at rpi.edu
